p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration

A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2-D numerical simulations and experimental fabrication.

GHz modulation of carbon nanotube cathodes for microwave amplifiers

Cold cathodes based on carbon nanotubes (CNs) allow to produce a pulsed/directly modulated electron beam. Using an array of vertically aligned CNs that exhibit an aspect ratio of around 200, we demonstrated the modulation of a 1.5 A/cm2 beam at 1.5 GHz frequency. Such CN cathodes are very promising for their use in a new generation of compact and low cost microwave amplifiers that operates between 30 and 100 GHz. ©2005 IEEE.

Electro-optic modulation of 1.5μm light in an active InGaAsP/InP quantum well waveguide

We report an InGaAsP/InP phase modulator operating in the 1.5μm wavelength band. Phase modulation of 7.5°/mA and 1.7°/mA of injected current have been measured for TE and TM polarised light respectively at a signal wavelength of 1.52 μm.

40 Gb/s carrierless amplitude and phase modulation for low-cost optical datacommunication links

4 bps/Hz 40 Gb/s carrierless amplitude and phase (CAP) modulation is investigated for next-generation datacommunication links. The 40 Gb/s link achieves double the length of a conventional NRZ scheme, despite using a low-bandwidth source. © 2011 Optical Society of America.