1000 resultados para air annealing


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Plasma in the air is successfully induced by a free-oscillated Nd:YAG laser pulse with a peak power of 10(2-3) W. The initial free electrons for the cascade breakdown process are from the ablated particles from the surface of a heated coal target, likewise induced by the focused laser beam. The laser field compensates the energy loss of the plasma when the corresponding temperature and the images are investigated by fitting the experimental spectra of B-2 Sigma(+) -> X-2 Sigma(+) band of CN radicals in the plasma with the simulated spectra and a 4-frame CCD camera. The electron density is estimated using a simplified Kramer formula. As this interaction occurs in a gas mixture of hydrogen and oxygen, the formation and development of the plasma are weakened or restrained due to the chaining branch reaction in which the OH radicals are accumulated and the laser energy is consumed. Moreover, this laser ignition will initiate the combustion or explosion process of combustible gas and the minimum ignition energy is measured at different initial pressures. The differences in the experimental results compared to those induced by a nanosecond Q-switched laser pulse with a peak power of 10(6-8) W are also discussed. (C) 2009 Professor T. Nejat Veziroglu. Published by Elsevier Ltd. All rights reserved.

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perimentally at evaluated pressures and under normal- and micro-gravity conditions utilizing the 3.5 s drop tower of the National Microgravity Laboratory of China. The results showed that under micro-gravity conditions the natural convection is minimized and the flames become more planar and symmetric compared to normal gravity. In both normal- and micro-gravity experiments and for a given strain rate and fuel concentration, the flame luminosity was found to enhance as the pressure increases. On the other hand, at a given pressure, the flame luminosity was determined to weaken as the strain rate decreases. At a given strain rate, the fuel concentration at extinction was found to vary non-monotonically with pressure, namely it first increases and subsequently decreases with pressure. The limit fuel concentration peaks around 3 and 4 atm under normal- and micro-gravity, respectively. The extinction limits measured at micro-gravity were in good agreement with predictions obtained through detailed numerical simulations but they are notably lower compared to the data obtained under normal gravity. The simulations confirmed the non-monotonic variation of flammability limits with pressure, in agreement with previous studies. Sensitivity analysis showed that for pressures between one and 5 atm, the near-limit flame response is dominated by the competition between the main branching, H + O2 ? OH + O, and the pressure sensitive termination, H+O2+M? HO2 + M, reaction. However, for pressures greater than 5 atm it was determined that the HO2 kinetics result in further chain branching in a way that is analogous to the third explosion limit of H2/O2 mixtures. 2010 The Combustion Institute. Published by Elsevier Inc. All rights reserved.

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The coupling mechanism of thermocapillary convection and evaporation effect in evaporating liquids was studied experimentally. The experiments were carried out to study a thin evaporating liquid layer in a rectangular test cell when the upper surface was open to air. By altering the imposed horizontal temperature differences and heights of liquid layers, the average evaporating rate and interfacial temperature profiles were measured. The flow fields were also visualized by PIV method. For comparison, the experiments were repeated by use of another two non-evaporating liquids to study the influence of evaporation effect. The results reveal evidently the role that evaporation effect plays in the coupling with thermocapillary convection.

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Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

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IEECAS SKLLQG

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Single-crystalline spinel (MgAl2O4) specimens were implanted with helium ions of 100 keV at three successively increasing fluences of (0.5, 2.0 and 8.0) x 10(16) ions/cm(2) at room temperature. The specimens were subsequently annealed in vacuum at different temperatures ranging from 500 to 1100 degrees C. Different techniques, including Fourier transformed infrared spectroscopy (FTIR), thermal desorption spectrometry (TDS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to investigate the specimens, It was found that the absorbance peak in the FTIR due to the stretching vibration of the Al-O bond shifts to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with an increase of annealing temperature. The absorbance peak shift has a linear relationship with the fluence increase in the as-implanted state, while it does not have a linear relationship with the fluence increase after the annealing process. Surface deformation occurred in the specimens implanted with fluences of 2.0 and 8.0 x 10(16) ions/cm(2) in the annealing process. The phenomena described above can be attributed to differences in defect formation in the specimens. (C) 2008 Elsevier B.V. All rights reserved.

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Silicon samples were implanted with helium and analyzed by atomic force microscopy (AFM) and Raman spectroscopy before and after annealing in the range of 523-1273 K. After annealing at 523 K, the amorphous area induced by He-ion implantation at room temperature was partially recovered and grain sizes became larger. The surface morphology was analyzed through AFM measurements and it was observed that root mean square of the surface roughness alters upwards and then downwards with annealing temperature. (C) 2008 Elsevier B.V. All rights reserved.

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Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.