基于Rete算法的多Agent的实时协同推理

1 引言多Agent系统是由若干具有一个或多个目标的Agent按照一定的信息关系和控制关系以及问题求解能力的分布模式组成的系统,它主要研究一组在逻辑上或物理上分离的Agent之间行为的协调。目前,多Agent系统已应用于诸如空中交通控制、电子商务、通讯网络管理和作业调度等生产实际领域。Agent技术应用到实际领域时映射的对象一般有

基于过程Agent及联合体投标的人力资源调度方法

随着软件产品规模的扩大和应用领域的扩展，对软件过程管理的要求也越来越高。在软件开发过程中，人力资源是最重要的一种资源，人力资源调度的优劣将直接影响软件开发过程的产品质量、成本和进度。因此，合理高效的人力资源调度方法和工具能够为软件企业在人力资源优化调度、项目进度安排等方面提供决策支持，进而提高软件企业的项目管理能力和人力资源利用效率。 传统的人力资源调度方法过度依赖于项目负责人的个人经验及主观判断，且所得到的调度结果具有较高的不稳定性和不可靠性。为了能够为软件项目管理人员在人力资源调度方面提供一个更为客观、有效的调度方法，本文提出了基于过程Agent及联合体投标的人力资源调度方法。与传统的人力资源调度方法不同，该方法充分考虑到人力资源的特殊性，以人为核心，按人力资源能力的差别将人力资源建模成不同的过程Agent，并引入市场经济中的联合体投标方法进行调度。 本文首先对人力资源、过程Agent、目标等进行了建模，引入了投标邀请、标书以及联合体等概念，并在此基础上提出了通过过程Agent间的协商而实现人力资源调度的模型。该模型将人力资源依据能力的不同划分为不同的过程Agent，过程Agent再依据各自的投标策略响应投标邀请——或进行投标，或发出新的投标邀请。最后，具有“项目经理”角色的过程Agent将对这些投标进行评审，并依据用户对软件产品质量、生产成本以及生产进度的偏好选择合适的标书，生成人力资源调度计划。 由于现实的软件开发活动中经常会出现人力资源不充足的情况，因此在很多情况下都无法得到一个完整的人力资源调度计划。本文前面提出的方法虽然能够在资源不充足的情况下得到一个部分的调度结果，但却不能给出资源缺乏的具体情况，以至于项目负责人无法判定是否需要招聘新的人员。基于此，本文在协商模型中引入了两个改进的协商策略——容差调度及虚拟资源调度。容差调度是指，当没有足够的资源而现有资源能够完成的任务离需求在一个可以“容忍”的范围内时，认为资源是充足的；虚拟资源调度是指，当资源不充足时，假定有足够数量的“虚拟的”资源可供调度。由于对人力资源及目标等的描述都存在一定的误差，因此容差调度可以在很大程度上提高人力资源调度的成功率；而虚拟资源调度将在调度结果中显示资源缺乏的信息，供项目负责人做出决策时参考。 最后根据该方法设计和开发了相应的人力资源调度系统，并进行了实验验证，证明了方法的有效性，可以为项目负责人进行项目管理时提供决策支持。

Enhanced photoluminescence of Nd2O3 nanoparticles modified with silane-coupling agent: Fluorescent resonance energy transfer analysis

A liquid laser medium with a lifetime of 492 mu s and a fluorescent quantum efficiency of 52.5% has been presented by stably dispersing dimethyl dichorosilane-modified Nd2O3 nanoparticles in dimethylsulfoxide. Its optical properties and mechanism were investigated and explained by fluorescence resonance energy transfer theory. The calculation result shows that the quenching of Nd-III F-4(3/2)-> I-4(11/2) transition via O-H vibrational excitation can be eventually neglected. The main reason is that the silane-coupling agent molecules remove the -OH groups on Nd2O3 nanoparticles and form a protective out layer. (c) 2007 American Institute of Physics.

EFFECTIVE-MASS THEORY FOR GAAS/GA1-XALXAS QUANTUM WIRES AND CORRUGATED SUPERLATTICES GROWN ON (311)-ORIENTED SUBSTRATES

The electronic structures of GaAs/Ga1-xAlxAs quantum wires (corrugated superlattices) grown on (311)-oriented substrates are studied in the framework of the effective-mass envelope-function method. The electron and hole subband structure and optical transition matrix elements are calculated. When x=1, the results are compared with experiments, and it is found that the direct transition becomes an indirect transition as the widths of well and barrier become smaller.

EFFECTIVE-MASS THEORY FOR SUPERLATTICES GROWN ON (11N)-ORIENTED SUBSTRATES

An effective-mass formulation for superlattices grown on (11N)-oriented substrates is given. It is found that, for GaAs/AlxGa1-xAs superlattices, the hole subband structure and related properties are sensitive to the orientation because of the large anisotropy of the valence band. The energy-level positions for the heavy hole and the optical transition matrix elements for the light hole apparently change with orientation. The heavy- and light-hole energy levels at k parallel-to = 0 can be calculated separately by taking the classical effective mass in the growth direction. Under a uniaxial stress along the growth direction, the energy levels of the heavy and light holes shift down and up, respectively; at a critical stress, the first heavy- and light-hole energy levels cross over. The energy shifts caused by the uniaxial stress are largest for the (111) case and smallest for the (001) case. The optical transition matrix elements change substantially after the crossover of the first heavy- and light-hole energy has occurred.

Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy

The Raman and photoreflectivity spectra of gallium nitride (GaN) films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy (GSMBE) have been investigated. The Raman spectra showed the presence of the E-2(high) mode and a shift in the wavenumber of this mode with respect to the GaN epilayer thickness. The Raman scattering results suggest the presence of stress due to lattice and thermal expansion misfit in the films, and also indicate that the buffer layer play an important role in the deposition of high quality GaN layers. The residual stress changes from tensile to compressive as the epilayer thickness increases. Samples subjected to anneal cycles showed an increase in the mobility due probably to stress relaxation as suggested by an observed shift in the E-2(high) mode in the Raman spectra after annealing.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.