Measurement of liquid film thickness by optical fluorescence and its application to an oscillating piston positive displacement flowmeter

The movement of the circular piston in an oscillating piston positive displacement flowmeter is important in understanding the operation of the flowmeter, and the leakage of liquid past the piston plays a key role in the performance of the meter. The clearances between the piston and the chamber are small, typically less than 60 νm. In order to measure this film thickness a fluorescent dye was added to the water passing through the meter, which was illuminated with UV light. Visible light images were captured with a digital camera and analysed to give a measure of the film thickness with an uncertainty of less than 7%. It is known that this method lacks precision unless careful calibration is undertaken. Methods to achieve this are discussed in the paper. The grey level values for a range of film thicknesses were calibrated in situ with six dye concentrations to select the most appropriate one for the range of liquid film thickness. Data obtained for the oscillating piston flowmeter demonstrate the value of the fluorescence technique. The method is useful, inexpensive and straightforward and can be extended to other applications where measurement of liquid film thickness is required. © 2011 IOP Publishing Ltd.

Effect of gate dielectric scaling in nanometer scale vertical thin film transistors

A short channel vertical thin film transistor (VTFT) with 30 nm SiN x gate dielectric is reported for low voltage, high-resolution active matrix applications. The device demonstrates an ON/OFF current ratio as high as 10 9, leakage current in the fA range, and a sub-threshold slope steeper than 0.23 V/dec exhibiting a marked improvement with scaling of the gate dielectric thickness. © 2011 American Institute of Physics.

Soft-lithographic processed soluble micropatterns of reduced graphene oxide for wafer-scale thin film transistors and gas sensors

PDMS based imprinting is firstly developed for patterning of rGO on a large area. High quality stripe and square shaped rGO patterns are obtained and the electrical properties of the rGO film can be adjusted by the concentration of GO suspension. The arrays of rGO electronics are fabricated from the patterned film by a simple shadow mask method. Gas sensors, which are based on these rGO electronics, show high sensitivity and recyclable usage in sensing NH 3. © 2012 The Royal Society of Chemistry.

Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

A new approach is presented to resolve bias-induced metastability mechanisms in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The post stress relaxation of threshold voltage (V(T)) was employed to quantitatively distinguish between the charge trapping process in gate dielectric and defect state creation in active layer of transistor. The kinetics of the charge de-trapping from the SiN traps is analytically modeled and a Gaussian distribution of gap states is extracted for the SiN. Indeed, the relaxation in V(T) is in good agreement with the theory underlying the kinetics of charge de-trapping from gate dielectric. For the TFTs used in this work, the charge trapping in the SiN gate dielectric is shown to be the dominant metastability mechanism even at bias stress levels as low as 10 V.

Performance of thin film carbon materials and carbon nanotubes as cold cathodes

The field emissions from three different types of carbon films are studied using a Kiethly voltage-current source-measure unit under computer control. The three types of carbon films are : 1) a-C:H:N deposited using an inductively coupled rf PECVD process, where the N content in the films can be as high as 30 at %; 2) cathodic arc deposited tetrahedral amorphous carbon with embedded regions of carbon nanotube and anion structures and 3) unoriented carbon nanotube films on a porous substrate. The films are formed by filtering a solution of nanotubes dispersed in alcohol through the pores and drying.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.

Measurements of triggering and transient growth in a model lean-premixed gas turbine combustor

Instability triggering and transient growth of thermoacoustic oscillations were experimentally investigated in combination with linear/nonlinear flame transfer function (FTF) methodology in a model lean-premixed gas turbine combustor operated with CH 4 and air at atmospheric pressure. A fully premixed flame with 10kW thermal power and an equivalence ratio of 0.60 was chosen for detailed characterization of the nonlinear transient behaviors. Flame transfer functions were experimentally determined by simultaneous measurements of inlet velocity fluctuations and heat release rate oscillations using a constant temperature anemometer and OH */CH * chemiluminescence emissions, respectively. The phase-resolved variation of the local flame structure at a limit cycle was measured by planar laser-induced fluorescence of OH. Simultaneous measurements of inlet velocity, OH */CH * emission, and acoustic pressure were performed to investigate the temporal evolution of the system from a stable to a limit cycle operation. This measurement allows us to describe an unsteady instability triggering event in terms of several distinct stages: (i) initiation of a small perturbation, (ii) exponential amplification, (iii) saturation, (iv) nonlinear evolution of the perturbations towards a new unstable periodic state, (v) quasi-steady low-amplitude periodic oscillation, and (vi) fully-developed high-amplitude limit cycle oscillation. Phase-plane portraits of instantaneous inlet velocity and heat release rate clearly show the presence of two different attractors. Depending on its initial position in phase space at infinitesimally small amplitude, the system evolves towards either a high-amplitude oscillatory state or a low-amplitude oscillatory state. This transient phenomenon was analyzed using frequency- and amplitude-dependent damping mechanisms, and compared to subcritical and supercritical bifurcation theories. The results presented in this paper experimentally demonstrate the hypothesis proposed by Preetham et al. based on analytical and computational solutions of the nonlinear G-equation [J. Propul. Power 24 (2008) 1390-1402]. Good quantitative agreement was obtained between measurements and predictions in terms of the conditions for the onset of triggering and the amplitude of triggered combustion instabilities. © 2011 The Combustion Institute.