Improved bounds for subband-adaptive iterative shrinkage/thresholding algorithms.

This paper presents new methods for computing the step sizes of the subband-adaptive iterative shrinkage-thresholding algorithms proposed by Bayram & Selesnick and Vonesch & Unser. The method yields tighter wavelet-domain bounds of the system matrix, thus leading to improved convergence speeds. It is directly applicable to non-redundant wavelet bases, and we also adapt it for cases of redundant frames. It turns out that the simplest and most intuitive setting for the step sizes that ignores subband aliasing is often satisfactory in practice. We show that our methods can be used to advantage with reweighted least squares penalty functions as well as L1 penalties. We emphasize that the algorithms presented here are suitable for performing inverse filtering on very large datasets, including 3D data, since inversions are applied only to diagonal matrices and fast transforms are used to achieve all matrix-vector products.

Single-sensor maximum power point tracking algorithms

Single-sensor maximum power point tracking algorithms for photovoltaic systems are presented. The algorithms have the features, characteristics and advantages of the widely used incremental conductance (INC) algorithm. However; unlike the INC algorithm which requires two sensors (the voltage sensor and the current sensor), the single-sensor algorithms are more desirable because they require only one sensor: the voltage sensor. The algorithms operate by maximising power at the DC-DC converter output, instead of the input. © 2013 The Institution of Engineering and Technology.

A PDE viewpoint on basic properties of coordination algorithms with symmetries

Several recent control applications consider the coordination of subsystems through local interaction. Often the interaction has a symmetry in state space, e.g. invariance with respect to a uniform translation of all subsystem values. The present paper shows that in presence of such symmetry, fundamental properties can be highlighted by viewing the distributed system as the discrete approximation of a partial differential equation. An important fact is that the symmetry on the state space differs from the popular spatial invariance property, which is not necessary for the present results. The relevance of the viewpoint is illustrated on two examples: (i) ill-conditioning of interaction matrices in coordination/consensus problems and (ii) the string instability issue. ©2009 IEEE.

Optimization Algorithms on Matrix Manifolds

This book shows how to exploit the special structure of such problems to develop efficient numerical algorithms.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min. © 2010 IEEE.

The role of damping in steel pan manufacture

Results are presented of systematic studies of vibration damping in steel of a type, and processed by a route, rel-evant to Caribbean steel pans. Damping is likely to be a significant factor in the variation of sound quality be-tween different pans. The main stages in pan manufac-ture are simulated in a controlled manner using sheet steel, cold-rolled to a prescribed level of thickness reduc-tion then annealed at a chosen temperature in a laboratory furnace. Small test strips were cut from the resulting material, and tested in free-free beam bending to deduce the Young’s modulus and its associated loss factor. It is shown that the steel type, the degree of cold working and the annealing temperature all have a significant influence on damping. Furthermore, for each individual specimen damping is found to decrease with rising frequency, ap-proximately following a power law. Comparison with samples cut from a real pan show that there are further influences from the pan’s geometrical details.