Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed. (C) 1996 American Institute of Physics.

盘片式光纤传感器灵敏度计算方法

系统地开展了对各类盘片式光纤传感器灵敏度的研究工作。以周边固支、中心镶嵌刚性质量块的盘片式光纤加速度传感器为例，分析了传感器弹性盘片上各点的应力应变状态；结合迈克耳孙干涉仪原理，建立了计算传感器加速度灵敏度的数学模型，并讨论了粘贴光纤盘的最佳尺寸。制作两个相应的传感器进行对比实验，验证了上述计算模型的正确性。采用上述模型系统地推导了不同边界条件情况下盘片式光纤传感器的粘贴区域和灵敏度计算公式。对盘片式光纤传感器如光纤加速度传感器、光纤压力传感器、光纤水听器等的设计制作具有理论指导作用。

MMI optical couplers and switches with SOI technology

MMI (multimode interference) coupler, modulator and switch based on SOI (silicon- on-insulator) have been become more and more attractive in optical systems since they show important performances. SiO2 thin cladding layers (<1.0mum) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. The design and fabrication of multimode interference (MMI) optical coupler, modulator and switche in SOI technology are presented in the paper. The results demonstrated that the modulator has an extinction ratio of -11.0dB and excess loss of -2.5dB, while the optical switch has a crosstalk of -12.5dB and responding time of less than 20 mus.

2 x 2 electrooptical switch in silicon-on-insulator waveguide

A 2 x 2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7dB and crosstalk of 4.8dB has been observed.