Electrolytic cells for plastic waste recycling

The current project assesses potential molten alloy anodes for Solid Oxide Fuel Cells (SOFC) running on solid waste. A detailed phase diagram study was performed to locate probable anode systems. The molten metal oxide system PbO-Sb2O3 was selected as a possible molten alloy anode for this application. A detailed vapour pressure study of this system was performed. Several cells were fabricated to experimentally assess the electrochemical properties of this system. The work reveals several unexpected limiting features such as the incompatibility between the platinum and the chosen alloy. A second cell was built, this time using rhenium wires instead, preventing such reaction. However, the rhenium wire sublimes under oxidizing conditions (air) and the sealing glass and the chosen alloy system react with each other under long term use. Considering all these issues, a third cell design was conceived, surpassing some obstacles and providing some initial information regarding the electrochemical behaviour. The current project shows that many parameters need to be taken into account to ensure materials compatibility. For the PbOSb2O3 system, the high volatility of Sb2O3 was a serious limitation that can only be addressed through the application of new contact wires or sealing materials and conditions. Nonetheless, the project highlights several other potential systems that can be considered, such as Pb11Ge3O17, Pb3GeO5, Pb5Ge3O11, Bi2CuO4, Bi2PdO4, Bi12GeO20.

Using Surface Spectroscopy to Help Interpret STM Images of Chemisorbed Molecules: Application to the Study of the Hydrogenation of Ketones and a-Ketoesters on Pt

Depuis que la haute énantiopureté est nécessaire dans l’industrie pharmaceutique, les études visant à découvrir les mécanismes pour l’hydrogénation énantiosélective de cétones ou céto-esters sur les surfaces, et à rechercher de nouveaux et plus performants catalyseurs asymétriques, sont d’une grande importance. La microscopie à effet tunnel (STM), la spectroscopie infrarouge de réflexion-absorption, la spectroscopie de désorption à température programmée et la spectrométrie de photoélectrons induits par rayons X sont des méthodes performantes facilitant la compréhension des mécanismes de réaction. En plus de nous permettre de comprendre les mécanismes réactionnels, les études peuvent fournir des informations sur la dynamique des réactions en catalyse hétérogène ainsi que sur le développement de la théorie de la fonctionnelle de la densité (DFT) afin de calculer des interactions faibles dans les processus de surface. D’autres parts, les calculs DFT fournissent une aide essentielle à l’interprétation des données de STM et spectroscopie de surface. Dans cette thèse, certains cétones et céto-esters sur la surface de platine sont étudiées par les techniques sophistiquées mentionnées ci-dessus. Mes études démontrent que la combinaison de l’utilisation de la spectroscopie de routine, des nanotechnologies et de nombreux calculs élaborés, est une méthode efficace pour étudier les réactions à la surface car ces techniques explorent les différents aspects de la surface ainsi que s’entraident mutuellement lors de certaines interprétations.

Recovery of palladium from a spent automobile catalyst leaching solution by a thiodiglycolamide derivative

In the sequence of previous research on the development of novel liquid-liquid amidetype compounds to efficiently and selectively extract platinum-group metals (PGMs) from concentrated hydrochloric acid media, a specific thiodiglycolamide derivative – N,N’-dimethyl-N,N’-dicyclohexylthiodiglycolamide (DMDCHTDGA) – has been applied for the recovery of palladium(II) from a spent automobile catalyst leaching solution, containing palladium(II) and rhodium(III) as PGMs. The results obtained are rather promising, since the DMDCHTDGA behavior towards the two PGMs is similar to that observed for hydrochloric acid aqueous media studied before, simulating the real leaching phases. Within eleven metal elements co-existing in solution, the majority in high fold-excesses, only aluminum(III) and cerium(III) interfere in the palladium(II) liquid-liquid extraction process, requiring further optimization.

A III-V channel field effect transistor for non-classical CMOS: process optimisation for improved gate stack function

This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.

Desenvolvimento de uma célula a combustível de glicerol direto em meio alcalino

Dissertação (mestrado)—Universidade de Brasília, Instituto de Química, Programa de Pós-Graduação em Química, 2015.