Characterization of Plastic Flow in Two Zr-Based Bulk Metallic Glasses

Plastic deformation behaviors of Zr65Al10Ni10CU15 and Zr52.5Al10Ni10Cu15Be12.5 bulk metallic glasses (BMGs) are studied by using the depth-sensing nanoindentation, microindentation and uniaxial compression. The Be-containing BMG exhibits a significantly improved overall plastic strain compared with the Be-free alloy during compressive tests. Both BMGs show a loading-rate-dependent serrated flow during nanoindentation measurements, but the Be-containing alloy exhibits a much lower critical loading rate for the disappearance of the serration than the Be-free BMG. The shear band patterns developed during plastic deformation are investigated by microindentation technique, wherein much higher shear band density is found in the Be-containing alloy than in the Be-free alloy, indicating an easier nucleation of shear bands in the former BMG. The difference in the plastic deformation behavior of the two BMGs can be explained by a free volume model.

Laser micromachining of thin films for optoelectronic devices and packages

Focused laser micromachining in an optical microscope system is used to prototype packages for optoelectronic devices and to investigate new materials with potential applications in packaging. Micromachined thin films are proposed as mechanical components to locate fibres and other optical and electrical components on opto-assemblies. This paper reports prototype structures which are micromachined in silicon carbide to produce beams 5 μm thick by (i) laser cutting a track in a SiC coated Si wafer, (ii) undercutting by anisotropic silicon etching using KOH in water, and (iii) trimming if necessary with the laser system. This approach has the advantage of fast turn around and proof of concept. Mechanical test data are obtained from the prototype SiC beam package structures by testing with a stylus profilometer. The Youngs modulus obtained for chemical vapour deposited silicon carbide is 360 +/- 50 GPa indicating that it is a promising material for packaging applications.

Prediction of structural dynamic plastic shear failure by Johnson's damage number

It is proved that Johnson's damage number is the sole similarity parameter for dynamic plastic shear failure of structures loaded impulsively, therefore, dynamic plastic shear failure can be understood when damage number reaches a critical value. It is suggested that the damage number be generally used to predict the dynamic plastic shear failure of structures under various kinds of dynamic loads (impulsive loading, rectangular pressure pulse, exponential pressure pulse, etc.,). One of the advantages for using the damage number to predict such kind of failure is that it is conveniently used for dissimilar material modeling.

Cross-sectional structure of tetrahedral amorphous carbon thin films

A cross-sectional transmission electron microscope study of the low density layers at the surface and at the substrate-film interface of tetrahedral amorphous carbon (ta-C) films grown on (001) silicon substrates is presented. Spatially resolved electron energy loss spectroscopy is used to determine the bonding and composition of a tetrahedral amorphous carbon film with nanometre spatial resolution. For a ta-C film grown with a substrate bias of -300 V, an interfacial region approximately 5 nm wide is present in which the carbon is sp2 bonded and is mixed with silicon and oxygen from the substrate. An sp2 bonded layer observed at the surface of the film is 1.3 ± 0.3 nm thick and contains no detectable impurities. It is argued that the sp2 bonded surface layer is intrinsic to the growth process, but that the sp2 bonding in the interfacial layer at the substrate may be related to the presence of oxygen from the substrate.

INFLUENCE OF MICROSTRUCTURE ON THE TOUGHNESS OF CARBON FIBRE/PLASTIC COMPOSITES.

A preliminary study is presented of the relationship between the microstructural aspects of failure and the fracture energy G//1//C for cracking parallel to the fibres in long-fibre/thermoplastic matrix composites. Fracture energies are measured by a new technique, and fracture surfaces generated by the test are examined by scanning electron microscopy.

Addition of ferromagnetic CoFe2O4 to YBCO thin films for enhanced flux pinning

An attempt has been made to prepare a YBa2Cu3O 7-δ (YBCO) thin film doped with ferromagnetic CoFe 2O4. Transmission electron microscopy of the resultant samples shows, however, that Y(Fe, Co)O3 forms as a nanoparticulate dispersion throughout the film in preference to CoFe2O4, leaving the YBCO yttrium deficient. As a consequence, the superconducting properties of the sample are poor, with a self-field critical current density of just 0.25 MA cm-2. Magnetic measurements indicate however that the Y(Fe, Co)O3 content, together with any other residual phases, is also ferromagnetic, and some interesting features are present in the in-field critical current behaviour, including a reduced dependence on applied field and a strong c-axis peak in the angular dependence. The work points the way towards future attempts utilising YFeO3 as an effective ferromagnetic pinning additive for YBCO. © 2009 Elsevier B.V. All rights reserved.

Fabrication and properties of TBCCO films via air-atomising spray deposition of thallium-free precursors

The high-field properties of polycrystalline superconducting TlBaCaCuO films fabricated by the incorporation of thallium vapour into air-atomised BaCaCuO precursors are described. Thick films with Tc values in the range 106-111 K have been prepared on polycrystalline yttria-stabilised zirconia substrates. The surface morphology, crystal structure and composition of the films are related to their high-field transport and magnetisation properties. Typical 10 mm × 9 mm films show Jc values > 1×104 A/cm2 at 77 K (0 T). The best film has a Jc=1.3×104 A/cm2 (Ic=3.6 A) at 77 K (0 T). Films prepared on 26 mm×9 mm substrates show typical large-area Jc values > 0.5×104 A/cm2 (77 K, 0 T). A square planar specimen of dimensions 4.3 mm ×4.3 mm exhibited magnetisation Jc values=1.2×105 A/cm2 at 4.2 K (0.1 T), 9.3×104 A/cm2 at 10 K (0.1 T), 3.3×104 A/ cm2 at 4 K (8 T), and 1.6×104 A/cm2 at 10 K (8 T). © 1994.

INFLUENCE OF MICROSTRUCTURE ON THE TOUGHNESS OF CARBON FIBRE/PLASTIC COMPOSITES.

A preliminary study is presented of the relationship between the microstructural aspects of failure and the fracture energy G//l//C for cracking parallel to the fibres in long-fibre/thermoplastic matrix composites. Fracture energies are measured by a new technique, and fracture surfaces generated by the test are examined by scanning electron microscopy.

Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Investigation of critical state in melt processed YBa2Cu3O7-δ thick films

The magnetic moment of square planar melt processed YBa2Cu3O7-δ thick films is observed to scale with the cube of the sample width at 4.2 K, suggesting that current flow on the length scale of the film determines its magnetization at this temperature. A well-defined discontinuity in slope in the scaling data at a sample width corresponding to the average grain size (≈2 mm) implies the coexistence of distinct intra- and inter-grain critical current densities of 1.1 × 105Acm-2 and 0.4 × 105Acm-2 at 1 T and 4.2 K. The presence of a critical state in the films at 4.2T is confirmed by removing the central section from a specimen. The observed change in magnetic moment is in excellent agreement with theory for fields greater than ≈2 T. A critical state is not observed at 77 K which suggests that the grains are only weakly coupled at the higher temperature. © 1994.

Effect of thickness on the magnetic properties of melt-processed YBCO thick films

The magnetic properties of melt-processed YBa2Cu3O7-δ thick films have been measured and correlated with features in the microstructure at 4.2 and 77 K for film thicknesses between 50 and 140 μm. A qualitative model for the volume magnetization of the films at 4.2 K is proposed in terms of the individual contributions from intra H-S grain, inter H-S grain and granular Jc components.

Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source

Hydrogenated amorphous carbon nitride (a-C:N:H) has been synthesized using a high plasma density electron cyclotron wave resonance (ECWR) technique using N2 and C2H2 as source gases, at different ratios and a fixed ion energy (80 eV). The composition, structure and bonding state of the films were investigated and related to their optical and electrical properties. The nitrogen content in the film rises rapidly until the N2/C2H2 gas ratio reaches 2 and then increases more gradually, while the deposition rate decreases steeply, placing an upper limit for the nitrogen incorporation at 30 at%. For nitrogen contents above 20 at%, the band gap and sp3-bonded carbon fraction decrease from 1.7 to 1.1 eV and approximately 65 to 40%, respectively. Films with higher nitrogen content are less dense than the original hydrogenated tetrahedral amorphous carbon (ta-C:H) film but, because they have a relatively high band gap (1.1 eV), high resistivity (109 Ω cm) and moderate sp3-bonded carbon fraction (40%), they should be classed as polymeric in nature.