Synthesis and self-assembly of poly(ethylene oxide)-b-poly(2-hydroxyethyl methacrylate)

Poly(ethylene oxide)-b-poly(2-hydroxyethyl methacrylate) (PEO-b-PHEMA) was synthesized by successive atom transfer radical polymerization (ATRP) of 2-hydroxyethyl methacrylate(HEMA) monomer using PEO-Br macroinitiator as initiator, CuBr/CuBr2 and 2,2.-bipyridyl (bpy) as catalyst and ligand. IR, H-1 NMR, and GPC analysis indicate that PEO-b-PHEMA block copolymer with low polydispersity index (M-w/M-n approximate to 1.1) has been formed. Self-assembly of this double hydrophilic block copolymer in the selective solvent and water was also studied. Owing to the high hydrophilic nature of the PEO and PHEMA blocks, this double hydrophilic block copolymer cannot disperse well in water. So block copolymer was modified by part esterification of PEO-b-PHEMA with acetic anhydride, which increased the hydrophobic group of the PHEMA block. The TEM results show that this block copolymer spontaneously form well-defined micelles in water.

Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes

By introducing tungsten oxide (WO3) doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq(3))-based device, the maximum efficiency reached 6.1 cd A(-1) and 4.8 lm W-1, which were much higher than 4.5 cd A(-1) and 1.1 lm W-1 of NPB/Alq(3) device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A(-1) (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 degrees C.

Alternating copolymerization of carbon dioxide and propylene oxide by single-component cobalt salen complexes with various axial group

A series of single-component cobalt salen complexes, N,N'-bis(salicylidene)-1,2phenylenediamino cobaltIII X(X = Cl (1a), Br (1b), NO3 (1c), CF3COO (1d), BF4 (le), and N3 (If)) (SalphCoX), were prepared for alternating copolymerization of carbon dioxide and propylene oxide(PO) under mild condition. The axial anion X group of the SalenphCoX played important role in tailoring the catalytic activity, polymeric/cyclic carbonate selectivity, as well as stereochemistry of carbonate unit sequence in the polymer chain. SalenphCoX with an electron-withdrawing axial X group (complex 1c) was an ideal catalyst for the copolymerization of CO2 and PO to selectively produce polycarbonate with similar to 99% carbonate linkage and over 81% head-to-tail structure.

Thermal barrier coating of lanthanum-zirconium-cerium composite oxide made by electron beam-physical vapor deposition

Lanthanum-zirconium-cerium composite oxide (La-2(Zr0.7Ce0.3)(2)O-7, LZ7C3) as a candidate material for thermal barrier coatings (TBCs) was prepared by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, thermophysical properties, surface and cross-sectional morphologies and cyclic oxidation behavior of the LZ7C3 coating were studied. The results indicated that LZ7C3 has a high phase stability between 298 K and 1573 K, and its linear thermal expansion coefficient (TEC) is similar to that of zirconia containing 8 wt% yttria (8YSZ). The thermal conductivity of LZ7C3 is 0.87 W m(-1) K-1 at 1273 K, which is almost 60% lower than that of 8YSZ. The deviation of coating composition from the ingot can be overcome by the addition of excess CeO2 and ZrO2 during ingot preparation or by adjusting the process parameters.

Preparation and electrical properties of new oxide ion conductors Ce6-xDyxMoO15-delta (0.0 <= x <= 1.8)

Ce6-xDyxMoO15-delta (0.0 <= x <= 1.8) were synthesized by modified sol-gel method. Structural and electrical properties were investigated by means of X-ray diffraction (XRD), Raman, X-ray photoelectron spectroscopy (XPS) and electrochemical impedance spectroscopy (EIS). The XRD patterns showed that the materials were single phase with a cubic fluorite structure. Impedance spectroscopy measurement in the temperature range between 350 degrees C and 800 degrees C indicated a sharp increase in conductivity for the system containing small amount of Dy2O3. The Ce5.6Dy0.4MoO15-delta detected to be the best conducting phase with the highest conductivity (sigma(t) = 8.93 x 10(-3) S cm(-1)) is higher than that of Ce5.6Sm0.4MoO15-delta (sigma(t) = 2.93 x 10(-3) S cm(-1)) at 800 degrees C, and the corresponding activation energy of Ce5.6Dy0.4MoO15-delta (0.994 eV) is lower than that of Ce5.6Sm0.4MoO15-delta (1.002 eV).

Preparation and Electrical Properties of New Oxide Ion Conductors Ce6-xGdxMoO15-delta (0.0 <= x <= 1.8)

A series of oxide ion conductors Ce6-xGdxMoO15-delta (0.0 <= x <= 1.8) have been prepared by the sol-gel method. Their properties were characterized by differential thermal analysis/thermogravimetry (DTA/TG), X-ray diffraction (XRD), Raman, IR, X-ray photoelectron spectroscopy (XPS), and AC impedance spectroscopy. The XRD patterns showed that the materials were single phase with a cubic fluorite structure. The conductivity of Ce6-xGdxMoO15-delta increases as x increases and reaches the maximum at x = 0.15. The conductivity of Ce4.5Gd1.5MoO15-delta is sigma(t) = 3.6 x 10(-3) S/cm at 700 degrees C, which is higher than that of Ce4.5/6Gd1.5/6O2-delta (sigma(t) = 2.6 x 10(-3) S/cm), and the corresponding activation energy of Ce4.5Gd1.5MoO15-delta (0.92 eV) is lower than that of Ce4.5/6Gd1.5/6O2-delta (1.18 eV).

Electrochemiluminescence-based DNA detection using guanine oxidation at electrostatic self-assembly of Ru(bpy)(3)(2+)-doped silica nanoparticles on indium tin oxide electrode

A Ru(bpy)(3)(2+)-doped silica nanoparticle-[Ru@Silica] modified indium tin oxide electrode was prepared by simple electrostatic self-assembly technique, and one-electron catalytic oxidation of guanine bases in double-strand and denatured DNA was realized using the electrochemiluminescence detection means.

Tris(2,2 '-bipyridyl) ruthenium(II) doped silica film modified indium tin oxide electrode and its electrochemiluminescent properties

An approach was reported to synthesize silica hybridized ruthenium bipyridyl complex through amidation reaction by covalent attachment of bis(bipyridyl)-4,4'-dicarboxy-2,2'-bipyridyl-ruthenium to (3-aminopropyl)-triethoxysilane. The hybrid complex then was gelatinized through acid catalytic hydrolysis method and a sol-gel modified indium, tin oxide electrode was prepared via spin coating technique. As prepared indium tin oxide electrode possesses good stability therein with excellent electrochemiluminescence behavior.

Templateless, surfactantless, electrochemical route to a cuprous oxide microcrystal: From octahedra to monodisperse colloid spheres

Herein we report a simple electrochemical route for the controlled synthesis of a Cu2O microcrystal from perfect octahedra to monodisperse colloid spheres via control of the electrodeposition potential without the introduction of any template or surfactant. Perfect Cu2O octahedra and monodisperse colloid spheres have been obtained in high yield (similar to 100%).

Sensitive biomimetic sensor based on molecular imprinting at functionalized indium tin oxide electrodes

We initially report an electrochemical sensing platform based on molecularly imprinted polymers (MIPs) at functionalized Indium Tin Oxide Electrodes (ITO). In this research, aminopropyl-derivatized organosilane aminopropyltriethoxysilane (APTES), which plays the role of functional monomers for template recognition, was firstly self-assembled on an ITO electrode and then dopamine-imprinted sol was spin-coated on the modified surface. APTES which can interact with template dopamine (DA) through hydrogen bonds brought more binding sites located closely to the surface of the ITO electrode, thus made the prepared sensor more sensitive for DA detection. Potential scanning is presented to extract DA from the modified film, thus DA can rapidly and completely leach out. The affinity and selectivity of the resulting biomimetic sensor were characterized using cyclic voltammetry (CV). It exhibited an increased affinity for DA over that of structurally related molecules, the anodic current for DA oxidation depended on the concentration of DA in the linear range from 2 x 10(-6) M to 0.8 x 10(-3) M with a correlation coefficient of 0.9927.In contrast, DA-templated film prepared under identical conditions on a bare ITO showed obviously lower response toward dopamine in solution.

Improved performances of organic light-emitting diodes with metal oxide as anode buffer

We demonstrate extremely stable and highly efficient organic light-emitting diodes (OLEDs) based on molybdenum oxide (MoO3) as a buffer layer on indium tin oxide (ITO). The significant features of MoO3 as a buffer layer are that the OLEDs show low operational voltage, high electroluminescence (EL) efficiency and good stability in a wide range of MoO3 thickness. A green OLED with structure of ITO/MoO3/N,N-'-di(naphthalene-1-yl)-N,N-'-diphenyl-benzidene (NPB)/NPB: tris(8-hydroxyquinoline) aluminum (Alq(3)):10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)/Alq(3)/LiF/Al shows a long lifetime of over 50 000 h at 100 cd/m(2) initial luminance, and the power efficiency reaches 15 lm/W. The turn-on voltage is 2.4 V, and the operational voltage at 1000 cd/m(2) luminance is only 6.9 V. The significant enhancement of the EL performance is attributed to the improvement of hole injection and interface stability at anode.