Detection of Copper Ion with Laser-Induced Fluorescence in A Capillary Electrophoresis Microchip

A capillary electrophoresis microchip coupled with a confocal laser-induced fluorescence (LIF) detector was successfully constructed for the analysis of trace amounts of heavy metals in environmental sources. A new fluorescence dye, RBPhOH, synthesized from rhodamine B, was utilized in a glass microchip to selectively determine copper with high sensitivity. A series of factors including running buffer concentration, detection voltage, and sample loading time were optimized for maximum LIF detector response and, hence, method sensitivity.

Applications of Heavy Ion Irradiation in Photonic Crystal Research

Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.

Applications of Heavy Ion Irradiation in Photonic Crystal Research

Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.

Magnetic and optical properties of cobalt nanowires fabricated in polycarbonate ion-track templates

Submitted by CAS-IR

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.