Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.

Factores ambientales que afectan la germinación de Dipsacus fullonum L; evaluación de temperatura, stress salino y osmótico

Resumen: Dipsacus fullonum es una especie conocida vulgarmente como carda, carda silvestre o cardencha, perteneciente a la familia Dipsacaceae. Es una maleza muy invasora que crece en sitios abiertos y resiste condiciones de sequía, inundación y salinidad. Conocer la tolerancia de esta especie a estos factores permitiría conocer su potencial área de infestación. Al presente esta información es escasa en la Argentina. Por otro lado, tampoco se dispone de información acerca del valor de sus temperaturas cardinales ni de la tolerancia al estrés salino u osmótico. Por ello, dentro de este marco teórico se evaluaron: i) el potencial agua base de germinación (ψb (50)) aplicando el modelo del hidrotiempo y ii) las temperaturas cardinales y iii) el tiempo térmico a germinación (TT). Para la obtención de estos parámetros se condujeron diferentes ensayos de germinación a las siguientes temperaturas: 5°C; 10°C; 15°C; 20°C; 25°C; 30°C y 35°C. Se calculó el porcentaje de semillas germinadas y el tiempo medio a germinación para todos los tratamientos térmicos. Fue observado que a medida que la temperatura aumentó, disminuía el tiempo medio a germinación (T50) y sólo en dos temperaturas estudiadas el porcentaje final no llegó al 100% (i.e. 5°C y 30°C) y a 35°C no se observó germinación. La temperatura base fue de 4,94ºC, la óptima fue 25,46ºC y la crítica fue 38,90ºC. El tiempo térmico para la etapa de germinación fue de 39,06ºCd. En los ensayos de stress osmótico y salino, se observó que a medida que las semillas fueron incubadas a potenciales más negativos el porcentaje de germinación final no varió excepto en los potenciales muy negativos (- 1 MPa en NaCl y -0,75MPa en PEG). En cambio, se observó un retraso en el inicio de la germinación. Estos resultados proponen que en coincidencia con sus características morfológicas, su hábito de crecimiento, su fácil dispersión y el amplio rango de condiciones ambientales donde la germinación alcanza elevados porcentajes permiten proponer que D. fullonum sea reportada en nuevas zonas.

Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.

Linear Stability Analysis of Convection in Two-Layer System with an Evaporating Vapor-Liquid Interface

Classical theories have successfully provided an explanation for convection in a liquid layer heated from below without evaporation. However, these theories are inadequate to account for the convective instabilities in an evaporating liquid layer, especially in the case when it is cooled from below. In the present paper, we study the onset of Marangoni convection in a liquid layer being overlain by a vapor layer.A new two-sided model is put forward instead of the one-sided model in previous studies. Marangoni-Bénard instabilities in evaporating liquid thin layers are investigated with a linear instability analysis. We define a new evaporation Biot number, which is different from that in previous studies and discuss the influences of reference evaporating velocity and evaporation Biot number on the vapor-liquid system. At the end, we explain why the instability occurs even when an evaporating liquid layer is cooled from below.

Stress intensity factors for functionally graded solid cylinders

This paper presents the mode I stress intensity factors for functionally graded solid cylinders with an embedded penny-shaped crack or an external circumferential crack. The solid cylinders are assumed under remote uniform tension. The multiple isoparametric finite element method is used. Various types of functionally graded materials and different gradient compositions for each type are investigated. The results show that the material property distribution has a quite considerable in influence on the stress intensity factors. The influence for embedded cracks is quite different from that for external cracks.

Generalized Maugis-Dugdale Model of an Elastic Cylinder in Non-Slipping Adhesive Contact with a Stretched Substrate

We have recently developed a generalized JKR model for non-slipping adhesive contact between an elastic cylinder and a stretched substrate where both tangential and normal tractions are transmitted across the contact interface. Here we extend this model to a generalized Maugis-Dugdale model by adopting a Dugdale-type adhesive interaction law to eliminate the stress singularity near the edge of the contact zone. The non-slipping Maugis-Dugdale model is expected to have a broader range of validity in comparison with the non-slipping JKR model. The solution shares a number of common features with experimentally observed behaviors of cell reorientation on a cyclically stretched substrate.

Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700°C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp3 sites to sp2 with a drastic change occurring after 1100°C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics.

Properties of a-C:H films deposited from a methane electron cyclotron wave resonant plasma

An electron cyclotron wave resonant methane plasma discharge was used for the high rate deposition of hydrogenated amorphous carbon (a-C:H). Deposition rates of up to ∼400 Å/min were obtained over substrates up to 2.5 in. in diameter with a film thickness uniformity of ∼±10%. The deposited films were characterised in terms of their mass density, sp3 and hydrogen contents, C-H bonding, intrinsic stress, scratch resistance and friction properties. The deposited films possessed an average sp3 content, mass density and refractive index of ∼58%, 1.76 g/cm3 and 2.035 respectively.Mechanical characterisation indicated that the films possessed very low steady-state coefficients of friction (ca. 0.06) and a moderate shear strength of ∼141 MPa. Nano-indentation measurements also indicated a hardness and elastic modulus of ∼16.1 and 160 GPa respectively. The critical loads required to induce coating failure were also observed to increase with ion energy as a consequence of the increase in degree of ion mixing at the interface. Furthermore, coating failure under scratch test conditions was observed to take place via fracture within the silicon substrate itself, rather than either in the coating or at the film/substrate interface. © 2003 Elsevier B.V. All rights reserved.

Closed form solutions of T-stress in plane elasticity crack problems

The T-stress is considered as an important parameter in linear elastic fracture mechanics. In this paper, several closed form solutions of T-stress in plane elasticity crack problems in an infinite plate are investigated using the complex potential theory. In the line crack case, if the applied loading is the remote stress or the concentrated forces, the T-stress can be derived from the basic field. Here, the basic field is defined as the field caused by the applied loading in the infinite plate without the crack. For the circular are crack, the T-stress can be abstracted from a known solution. For the cusp crack problems, the T-stress can be separated from the obtained stress solution for which the conformal mapping technique is used.

Effective Stress and Liquefaction of Seabed Under the Action of Standing Waves

波浪作用下海床的稳定性与液化分析是海底管线、防波堤和海洋平台设计中必须仔细考虑的问题。推荐了一个循环载荷作用下土体的弹塑性实用本构模型,并给出了一种粉土的模型参数,该模型直接根据初始应力状态和循环应力的大小与作用时间计算土体的塑性应变增量,在有限元计算中不需要引入弹塑性矩阵。采用Biot理论和有限单元法,对海床有效应力的变化过程分析表明,波腹点下海床存在较大的液化可能性。波浪作用对海床存在一定的压密作用。

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

Dasher - A data entry interface using continuous gestures and language models

Existing devices for communicating information to computers are bulky, slow to use, or unreliable. Dasher is a new interface incorporating language modelling and driven by continuous two-dimensional gestures, e.g. a mouse, touchscreen, or eye-tracker. Tests have shown that this device can be used to enter text at a rate of up to 34 words per minute, compared with typical ten-finger keyboard typing of 40-60 words per minute. Although the interface is slower than a conventional keyboard, it is small and simple, and could be used on personal data assistants and by motion-impaired computer users.

The investigation on dynamic fracture behavour of materials under compressive-shear combined stress waves

In this paper, an improved plate impact experimental technique is presented for studying dynamic fracture mechanism of materials, under the conditions that the impacting loading is provided by a single pulse and the loading time is in the sub-microsecond range. The impacting tests are carried out on the pressure-shear gas gun. The loading rate achieved is dK/dt similar to 10(8) MPa m(1/2) s(-1). With the elimination of influence of the specimen boundary, the plane strain state of a semi-infinite crack in an infinite elastic plate is used to simulate the deformation fields of crack tip. The single pulses are obtained by using the "momentum trap" technique. Therefore, the one-time actions of the single pulse are achieved by eradicating the stress waves reflected from the specimen boundary or diffracted from the crack surfaces. In the current study, some important phenomena have been observed. The special loading of the single pulse can bring about material damage around crack tip, and affect the material behavior, such as kinking and branching of the crack propagation. Failure mode transitions from mode I to mode II crack are observed under asymmetrical impact conditions. The mechanisms of the dynamic crack propagation are consistent with the damage failure model.

Analysis of the strengthening and toughening of a biomaterial interface

Based on the transmission electron micrographs of nacre, the existence of mineral bridges in the organic matrix interface is confirmed. It is proposed that the microarchitecture of nacre should be considered as a "brick-bridge-mortar" (BBM) arrangement rather than traditional "brick and mortar" (BM) one. Experiments and analyses indicate that the mineral bridges effectively affect the strength and toughness of the interfaces in nacre. Comparison with a laminated composite with BM structure, SiC/BN, shows that the pattern of the crack extension and the toughening mechanism of the two materials are different. This reveals that the mineral bridges play a key role in the toughening mechanisms of nacre, which gives a conceptual guidance in material synthesis.

Immunosensor Interface Based on Physical and Chemical Immunogylobulin G Adsorption onto Mixed Self-Assembled Monolayers

An immunosensor interface based on mixed hydrophobic self-assembled monolayers (SAMs) of methyl and carboxylic acid terminated thiols with covalently attached human Immunoglobulin G (hIgG), is investigated. The densely packed and organised SAMs were characterised by contact angle measurements and cyclic voltammetry. The effect of the non-ionic surfactant, Tween 20, in preventing nonspecific adsorption is addressed by ellipsometry during physical and covalent hIgG immobilization on pure and mixed SAMs, respectively. It is clearly demonstrated that nonspecific adsorption due to hydrophobic interactions of hIgG on methyl ended groups is totally inhibited, whereas electrostatic/hydrogen bonding interactions with the exposed carboxylic groups prevail in the presence of surfactant. Results of ellipsometry and Atomic Force Microscopy, reveal that the surface concentration of covalently immobilized hIgG is determined by the ratio of COOH/CH3-terminated thiols in SAM forming solution. Moreover, the ellipsometric data demonstrates that the ratio of bound anti-hIgG/hIgG depends on the density of hIgG on the surface and that the highest ratio is close to three. We also report the selectivity and high sensitivity achieved by chronoamperometry in the detection of adsorbed hIgG and the reaction with its antibody.