Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 by the polymeric precursor method were investigated. These films showed excellent ferroelectric properties in terms of large remnant polarization (2P(r)) of 47.6 mu C/cm(2) and (2E(c)) of 55 kV/cm, fatigue-free characteristics up to 10(10) switching cycles, and a current density of 0.7 mu A/cm(2) at 10 kV/cm. X-ray diffraction and scanning electron microscope investigations indicate that the deposited films exhibit a dense, well-crystallized microstructure having random orientations and with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the platelike grains of the BLT films, which make the domain walls easier to be switched under external field.

Low temperature synthesis and electrical properties of PbTiO3 thin films prepared by the polymeric precursor method

Ferroelectric PbTiO3 thin films were successfully prepared on a Pt(111)Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. This method allows low temperature (500 degrees C) synthesis and high electrical properties. The multilayer PbTiO3 thin films were granular in structure with a grain size of approximately 110-120 nm. A 380-nm-thick film was obtained by carrying out four cycles of the spin-coating/heating process. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (=3.4 nm). At room temperature and at a frequency of 100 kHz, the dielectric constant and the dissipation factor were, respectively, 570 and 0.016. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behavior. The remanent polarization and coercive field for the films deposited were 13.62 mu C/cm(2) and 121.43 kV/cm, respectively. The high electrical property values are attributed to the excellent microstrutural quality and chemical homogeneity of thin films obtained by the polymeric precursor method. (C) 2000 Elsevier B.V. S.A. All rights reserved.

Preparation, microstructural and electrical characterization of SrTiO3 thin films prepared by chemical route

Polycrystalline SrTiO3 thin films having a cubic perovskite structure were prepared at different temperatures by the polymeric precursor method on platinum-coated silicon substrate. Crystalline films with uniform composition and thickness were prepared by spin-coating and the post-deposition heat treatment was carried out at different temperatures. The film showed good structural, dielectric, and insulating properties, Scanning electron microscopy (SEM) micrographs showed no occurrence of interdiffusion between the bottom electrode (platinum) and the film during post-annealing, indicating a stable interface between the SrTiO3 and the bottom electrode. The dielectric constant and dissipation factor at a frequency of 100 kHz were 250 and 0.01, respectively, for a 360 nm thick film annealed at 600 degreesC. The capacitance versus applied voltage characteristics showed that the capacitance was almost independent of the applied voltage. The I-V characteristics were ohmic in low fields and a Schottky emission and/or Poole-Frenkel emission were postulated in high fields. Room temperature leakage current density was found to be in the order of 10(-7) A/cm(2) for a 360 nm thick film in an applied electric field of about 100 kV/cm. The charge storage density of 36 fC/mum(2) was obtained in an applied electric field of about 100 kV/cm. (C) 2001 Published by Elsevier B.V. Ltd. All rights reserved.

Evolution of CaCu3Ti4O12 varistor properties during heat treatment in vacuum

Calcium copper titanate (CaCu3Ti4O12) ceramic varistors were prepared by solid-state method. The samples were several times heat treated in vacuum and the evolution of electrical characteristics were monitored by current density versus electric field measurements and impedance spectroscopy. Repeated heat treatments in vacuum (900 degrees C for 1 h, 0.01 Torr) lead to a desorption of oxygen adsorbed at the grain boundaries and consequently to a degradation of the varistor properties. During further successive heat treatments some oxygen from the grain interior moves to the grain boundary thereby partially restoring the varistor properties. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Magnetic properties of acicular Fe1-xREx (RE = Nd, Sm, Eu, Tb; x=0, 0.05, 0.10) metallic nanoparticles

Acicular monodispersed Fe1-xREx (RE= Nd, Sm,Eu,Tb;x=0, 0.05, 0.10) metallic nanoparticles (60 +/- 5 nm in length and axial ratio similar to6) obtained by reduction of alumina-coated goethite nanoparticles-containing rare earth (RE) under hydrogen flow are reported. Alumina and maghemite thin layers on particle surface were used to protect the goethite particles against sintering and oxidation, respectively. Al and RE additions were obtained by successive heterocoagulation reactions. Aluminum sulfate (10 at.% based on Fe) was dissolved in water and the pH adjusted to 12.5 with NaOH solution. Goethite particles were suspended in this solution and CO2 gas was blown into the slurry to neutralize it to a pH 8.5 or less. Particles were purified and dehydrated to effect transformation to alumina-coated hematite nanoparticles, which were re-suspended in aqueous solution in which RE sulfate (0-0.15 at.% based on Fe) has been dissolved, and the pH increased by ammonia aqueous solution addition. Resulted alumina-coated RE-doped hematite nanoparticles were reduced to metal at 450 degreesC/12 h under hydrogen flow and passivated with nitrogen-containing ethanol vapor at room temperature. Acicular monodispersed metallic nanoparticle systems were obtained and the presence of Al and RE were confirmed by induced-coupled plasma spectrometry analysis. X-ray diffraction, Mossbauer spectroscopy, and magnetization data are in agreement with the nanosized alpha-Fe core in a bcc structure, having a spinel structure, gammaFe(2)O(3), with thickness similar to1.5 run on particle surface. Main magnetic parameters showed saturation magnetization decreases and significant increasing in the coercive field with the RE composition increases. Magnetic properties of these particles, similar to40% smaller than those commercially available, suggest a decrease in the bit-size for high-density magnetic or magneto-optics recording media application. (C) 2004 Published by Elsevier B.V.

Investigation of electrical properties of tantalum doped SnO2 varistor system

Ta2O5 doped SnO2 varistor systems containing 0.5 mol% ZnO and 0.5 mol% Coo were prepared by mixed oxide method. Considering that ZnO and Coo oxides are densification additives only the SnO(2)center dot ZnO center dot CoO ceramics cannot exhibit electrical nonlinearity. A small amount of Ta2O5 improves the nonlinear properties of the samples greatly. The height and width of the defect barriers were calculated. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1100 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. A grain-boundary defect barrier model for the SnO(2)center dot ZnO center dot CoO center dot Ta2O5 varistor system was also introduced. (c) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Ferroelectric materials with photoluminescent properties

Amorphous LiNbO3 thin films processed by polymeric precursor method exhibited efficient luminescence at room temperature. The films were deposited on silicon substrates and treated at 200degreesC for different times. The photoluminescence emission yield decreases with the increase of the treatment time and disappears for crystalline films. A theoretical-experimental study was performed on amorphous and crystalline materials to understand the influence of the defects on the photoluminescence properties. The theoretical band gap obtained by the difference of energy between the HOMO and LUMO levels is larger for crystalline structure when compared with amorphous material. This result, which is in agreement with experimental band gaps obtained from optical measurements, revealed the emergence of new electronic levels for the amorphous material, which are localized in the wide band gap of the crystalline structure. These new electronic levels may explain the photoluminescence observed at room temperature for LiNbO3 amorphous films.