Double-electron above threshold ionization of helium

We present calculations of intense-field multiphoton ionization processes in helium at XUV wavelengths. The calculations are obtained from a full-dimensional integration of the two-electron time-dependent Schrödinger equation. A momentum-space analysis of the ionizing two-electron wavepacket reveals the existence of double-electron above threshold ionization (DATI). In momentum-space two distinct forms of DATI are resolved, namely non-sequential and sequential. In non-sequential DATI correlated electrons resonantly absorb and share energy in integer units of Ïlaser.

Single and double detachment from H-

Absolute cross sections for single and double detachment from H– following electron impact have been measured over a range of collision energies from the thresholds to 170 eV. The measurements were made using a magnetic storage ring. The ions in the ring were merged with a monoenergetic electron beam and neutral and positively charged fragments were detected. We cover larger energy ranges than in many of the previous experiments, and this is the first time both single and double detachment have been measured simultaneously. This allows us to present accurate ratios between the single and double detachment cross sections. On the basis of these ratio measurements we discuss possible mechanisms leading to double detachment.

Double ionization of atomic negative ions in an intense laser field

In recent years there have been many studies of multiple ionization of closed shell rare gas atoms by intense laser fields. Until now no similar work has been done in the study of more diverse targets such as negative ions where low binding energies and strong electron correlations could yield distinctive behaviour. We present the first results of ionization of more than one electron from a range of atomic negative ions by intense laser pulses. Although these pulses are long by modern standards, and tend to produce sequential ionization in atoms, the positive ion yields from the negative ions do not depend predictably on the ionization potentials. This suggests that there may, intriguingly, be an alternative mechanism enhancing double ionization at low intensities.

Fas and DNA double stranded breaks in human ejaculated sperm

Objective: to determine the incidence of Fas positivity and DNA double stranded breaks (DSB) as indicators of early and late stage apoptosis in ejaculated sperm. Design: Fas positivity was assessed by flow cytometry and DSB by neutral Comet assay Setting: Andrology Laboratory, Royal Maternity Hospita, Belfast Northern Ireland, UK. Patients: 45 infertile men undergoing infertility investigations and 10 fertile men undergoing vasectomies Main Outcome measures: Perecentage Fas positive cells, percentage DNA fragmentation, olive tail moments Results: The apoptotic marker Fas was detected in ejaculated sperm, with a higher incidence of Fas positivity in teratozoospermic and asthenozoospermic than in normozoospermic semen. No Fas positivity was observed in fertile mens’ sperm. DSB were greater in infertile than in fertile mens’ sperm and also greater in sperm in semen than in sperm prepared for assisted conception. There was an inverse relationship between DSB and both sperm concentration and motility. There was no relationship between Fas positivity and DNA damage. Conclusion: Fas was expressed in sperm of infertile men. In contrast, DNA fragmentation was observed in all sperm of fertile and infertile men and correlated with inadequate concentration and motility, which suggests that sperm DSB are ubiquitous and are not solely associated with apoptosis.

Performance assessment of nanoscale double- and triple- gate FinFETs

This is the first paper to describe performance assessment of triple and double gate FinFETs for High Performance (HP), Low Operating Power (LOP) and Low Standby Power (LSTP) logic technologies is investigated. The impact of gate work-function, spacer width, lateral source/drain doping gradient, fin aspect ratio, fin thickness on device performance, has been analysed in detail and guidelines are presented to meet ITRS specification at 65 and 45 nm nodes. Optimal design of lateral source/drain doping profile can not only effectively control short channel effects, yielding low off-current, but also achieve low values of intrinsic gate delay.