1000 resultados para Contact manifold


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Objectives To evaluate the presence of fungi on contact electrodes and ultrasound transducers from physiotherapy clinics.Design Quantitative study conducted at the Laboratory of Microbiology and Immunology, Faculty of Health Sciences and Technology of Piaui - NOVAFAPI, Teresina, Brazil.Setting Sample collection was performed in 10 clinics ( 20 ultrasound transducers and 20 contact electrodes).Main outcome measures Swabs were soaked with saline solution, inoculated in culture and incubated for filamentous fungi and yeast growth.Results Fourteen taxons were identified: Acremomium hyalinulum (Sacc.), Aspergillus terreus, Candida albicans, Cladosporium cladosporioides, Cladosporium elatum, Cladosporium oxysporum, Cladosporium sphaerospermum, Cladosphialophora bantiana, Curvularia clavata, Curvularia senegalensis, Fusarium oxysporum, Penicillium decumbens, Scopulariopsis candida and Sporothrix schenckii. Aspergillus terreus, Cladosporium oxysporum, Sporothrix shenckii and Candida albicans were found most often on contact electrodes, and Penicillium decumbens and Cladosporium cladosporioides were found most often on ultrasound transducers.Conclusion Fungi were found on all of the contact electrodes and ultrasound transducers. Physiotherapy professionals need to improve the disinfection procedures for this equipment. (C) 2010 Chartered Society of Physiotherapy. Published by Elsevier Ltd. All rights reserved.

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Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Massless scalar and vector fields are coupled to the Lyra geometry by means of the Duffin-Kemmer-Petiau (DKP) theory. Using the Schwinger variational principle, the equations of motion, conservation laws and gauge symmetry are implemented. We find that the scalar field couples to the anholonomic part of the torsion tensor, and the gauge symmetry of the electromagnetic field does not break by the coupling with torsion.

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We investigate the possibility that four-fermion contact interactions give rise to the observed deviation from the Standard Model prediction for the weak charge of cesium, through one-loop contributions. We show that the presence of loops involving the third generation quarks can explain such deviation.

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We establish constraints on a general four-fermion contact interaction from precise measurements of electroweak parameters. We compute the one-loop contribution for the leptonic Z width, anomalous magnetic, weak-magnetic, electric and weak dipole moments of leptons in order to extract bounds on the energy scale of these effective interactions.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Let alpha be a C(infinity) curve in a homogeneous space G/H. For each point x on the curve, we consider the subspace S(k)(alpha) of the Lie algebra G of G consisting of the vectors generating a one parameter subgroup whose orbit through x has contact of order k with alpha. In this paper, we give various important properties of the sequence of subspaces G superset of S(1)(alpha) superset of S(2)(alpha) superset of S(3)(alpha) superset of ... In particular, we give a stabilization property for certain well-behaved curves. We also describe its relationship to the isotropy subgroup with respect to the contact element of order k associated with alpha.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)