Estimation of Mycobacterium avium subsp. paratuberculosis load in raw bulk tank milk in Emilia-Romagna Region (Italy) by qPCR

Consumption of milk and dairy products is considered one of the main routes of human exposure to Mycobacterium avium subsp. paratuberculosis (MAP). Quantitative data on MAP load in raw cows’ milk are essential starting point for exposure assessment. Our study provides this information on a regional scale, estimating the load of MAP in bulk tank milk (BTM) produced in Emilia-Romagna region (Italy). The survey was carried out on 2934 BTM samples (88.6% of the farms herein present) using two different target sequences for qPCR (f57 and IS900). Data about the performances of both qPCRs are also reported, highlighting the superior sensitivity of IS900-qPCR. Seven hundred and eighty-nine samples tested MAP-positive (apparent prevalence 26.9%) by IS900 qPCR. However, only 90 of these samples were quantifiable by qPCR. The quantifiable samples contained a median load of 32.4 MAP cells mL−1 (and maximum load of 1424 MAP cells mL−1). This study has shown that a small proportion (3.1%) of BTM samples from Emilia-Romagna region contained MAP in excess of the limit of detection (1.5 × 101 MAP cells mL−1), indicating low potential exposure for consumers if the milk subsequently undergoes pasteurization or if it is destined to typical hard cheese production.

Performance of polarisation functionals for linear and nonlinear optical properties of bulk zinc chalcogenides ZnX (X=S,Se,Te).

We calculated the frequency dependent macroscopic dielectric function and second-harmonic generation of cubic ZnS, ZnSe and ZnTe within time-dependent density-polarisation functional theory. The macroscopic dielectric function is calculated in a linear response framework, and second-harmonic generation in a real-time framework. The macroscopic exchange–correlation electric field that enters the time-dependent Kohn–Sham equations and accounts for long range correlation is approximated as a simple polarisation functional αP, where P is the macroscopic polarisation. Expressions for α are taken from the recent literature. The performance of the resulting approximations for the exchange–correlation electric field is analysed by comparing the theoretical spectra with experimental results and results obtained at the levels of the independent particle approximation and the random-phase approximation. For the dielectric function we also compare with state-of-the art calculations at the level of the Bethe–Salpeter equation.

Selective Multi-Carrier Index Keying OFDM: Error Propagation Rate with Moment Generating Function

We propose a new selective multi-carrier index keying in orthogonal frequency division multiplexing (OFDM) systems that opportunistically modulate both a small subset of sub-carriers and their indices. Particularly, we investigate the performance enhancement in two cases of error propagation sensitive and compromised deviceto-device (D2D) communications. For the performance evaluation, we focus on analyzing the error propagation probability (EPP) introducing the exact and upper bound expressions on the detection error probability, in the presence of both imperfect and perfect detection of active multi-carrier indices. The average EPP results in closedform are generalized for various fading distribution using the moment generating function, and our numerical results clearly show that the proposed approach is desirable for reliable and energy-efficient D2D applications.

Polynomial Model for High-Order and Multi-Carrier Passive Intermodulation Products

Passive intermodulation (PIM) often limits the performance of communication systems, particularly in the presence of multiple carriers. Since the origins of the apparently multiple physical sources of nonlinearity causing PIM in distributed circuits are not fully understood, the behavioural models are frequently employed to describe the process of PIM generation. In this paper, a memoryless nonlinear polynomial model, capable of predicting high-order multi-carrier intermodulation products, is deduced from the third-order two-tone PIM measurements on a microstrip transmission line with distributed nonlinearity. The analytical model of passive distributed nonlinearity is implemented in Keysight Technology’s ADS simulator to evaluate the adjacent band power ratio for three-tone signals. The obtained results suggest that the costly multi-carrier test setups can possibly be replaced by a simulation tool based on the properly retrieved nonlinear polynomial model.

Radiation-induced defects in quantum-size structures of A3B5 semiconductors

As estruturas quânticas de semicondutores, nomeadamente baseadas em GaAs, têm tido nos últimos vinte anos um claro desenvolvimento. Este desenvolvimento deve-se principalmente ao potencial tecnológico que estas estruturas apresentam. As aplicações espaciais, em ambientes agressivos do ponto de vista do nível de radiação a que os dispositivos estão sujeitos, motivaram todo o desenrolar de estudos na área dos defeitos induzidos pela radiação. As propriedades dos semicondutores e dos dispositivos de semicondutores são altamente influenciadas pela presença de defeitos estruturais, em particular os induzidos pela radiação. As propriedades dos defeitos, os processos de criação e transformação de defeitos devem ser fortemente alterados quando se efectua a transição entre o semicondutor volúmico e as heteroestruturas de baixa dimensão. Este trabalho teve como principal objectivo o estudo de defeitos induzidos pela radiação em estruturas quânticas baseadas em GaAs e InAs. Foram avaliadas as alterações introduzidas pelos defeitos em estruturas de poços quânticos e de pontos quânticos irradiadas com electrões e com protões. A utilização de várias técnicas de espectroscopia óptica, fotoluminescência, excitação de fotoluminescência e fotoluminescência resolvida no tempo, permitiu caracterizar as diferentes estruturas antes e após a irradiação. Foi inequivocamente constatada uma maior resistência à radiação dos pontos quânticos quando comparados com os poços quânticos e os materiais volúmicos. Esta resistência deve-se principalmente a uma maior localização da função de onda dos portadores com o aumento do confinamento dos mesmos. Outra razão provável é a expulsão dos defeitos dos pontos quânticos para a matriz. No entanto, a existência de defeitos na vizinhança dos pontos quânticos promove a fuga dos portadores dos níveis excitados, cujas funções de onda são menos localizadas, provocando um aumento da recombinação nãoradiativa e, consequentemente, uma diminuição da intensidade de luminescência dos dispositivos. O desenvolvimento de um modelo bastante simples para a estatística de portadores fora de equilíbrio permitiu reproduzir os resultados de luminescência em função da temperatura. Os resultados demonstraram que a extinção da luminescência com o aumento da temperatura é determinada por dois factores: a redistribuição dos portadores minoritários entre os pontos quânticos, o poço quântico e as barreiras de GaAs e a diminuição na taxa de recombinação radiativa relacionada com a dependência, na temperatura, do nível de Fermi dos portadores maioritários.

Characterization of RSOA modulators in radio over fiber links

In this work physical and behavioral models for a bulk Reflective Semiconductor Optical Amplifier (RSOA) modulator in Radio over Fiber (RoF) links are proposed. The transmission performance of the RSOA modulator is predicted under broadband signal drive. At first, the simplified physical model for the RSOA modulator in RoF links is proposed, which is based on the rate equation and traveling-wave equations with several assumptions. The model is implemented with the Symbolically Defined Devices (SDD) in Advanced Design System (ADS) and validated with experimental results. Detailed analysis regarding optical gain, harmonic and intermodulation distortions, and transmission performance is performed. The distribution of the carrier and Amplified Spontaneous Emission (ASE) is also demonstrated. Behavioral modeling of the RSOA modulator is to enable us to investigate the nonlinear distortion of the RSOA modulator from another perspective in system level. The Amplitude-to-Amplitude Conversion (AM-AM) and Amplitude-to-Phase Conversion (AM-PM) distortions of the RSOA modulator are demonstrated based on an Artificial Neural Network (ANN) and a generalized polynomial model. Another behavioral model based on Xparameters was obtained from the physical model. Compensation of the nonlinearity of the RSOA modulator is carried out based on a memory polynomial model. The nonlinear distortion of the RSOA modulator is reduced successfully. The improvement of the 3rd order intermodulation distortion is up to 17 dB. The Error Vector Magnitude (EVM) is improved from 6.1% to 2.0%. In the last part of this work, the performance of Fibre Optic Networks for Distributed and Extendible Heterogeneous Radio Architectures and Service Provisioning (FUTON) systems, which is the four-channel virtual Multiple Input Multiple Output (MIMO), is predicted by using the developed physical model. Based on Subcarrier Multiplexing (SCM) techniques, four-channel signals with 100 MHz bandwidth per channel are generated and used to drive the RSOA modulator. The transmission performance of the RSOA modulator under the broadband multi channels is depicted with the figure of merit, EVM under di erent adrature Amplitude Modulation (QAM) level of 64 and 254 for various number of Orthogonal Frequency Division Multiplexing (OFDM) subcarriers of 64, 512, 1024 and 2048.

Determining carrier mobility with a metal–insulator–semiconductor structure

The electron and hole mobility of nickel-bis(dithiolene) (NiDT) are determined in a metal– insulator–semiconductor (MIS)structure using admittance spectroscopy. The relaxation times found in the admittance spectra are attributed to the diffusion time of carriers to reach the insulator interface and via Einstein’s relation this yields the mobility values. In this way, an electron mobility of 1:9 104 cm2=Vs and a hole mobility of 3:9 106 cm2=Vs were found. It is argued that the low mobility is caused by an amphoteric mid-gap trap level. The activation energy for electrons and holes from these traps is found to be 0.46 eV and 0.40 eV, respectively.

Joint compensation of IQ-imbalance and carrier phase sychronization errors in communication receivers

This work addresses the joint compensation of IQimbalances and carrier phase synchronization errors of zero- IF receivers. The compensation scheme based on blind-source separation which provides simple yet potent means to jointly compensate for these errors independent of modulation format and constellation size used. The low-complexity of the algorithm makes it a suitable option for real-time deployment as well as practical for integration into monolithic receiver designs.

On the structure and performance of a novel blind source separation based carrier phase synchronization error compensator

In this paper we carry out a detailed performance analysis of a novel blind-source-seperation (BSS) based DSP algorithm that tackles the carrier phase synchronization error problem. The results indicate that the mismatch can be effectively compensated during the normal operation as well as in the rapidly changing environments. Since the compensation is carried out before any modulation specific processing, the proposed method works with all standard modulation formats and lends itself to efficient real-time custom integrated hardware or software implementations.

A new bulk-driven input stage design for sub 1-volt CMOS op-amps

This paper presents a new design approach for a rail-to-rail bulk-driven input stage using a standard single-well (n-well in this paper) CMOS technology. This input stage can provide nearly constant transconductance and constant slew rate over the entire input common-mode voltage, operating with a wide supply voltage ranging from sub 1-volt (V/sub T0/+ 3V/sub DSsat/) to the maximum allowed for the CMOS process, as well as preventing latch-up.