Challenges in visible wavelength detection using optically transparent oxide semiconductors

We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications. © 2012 IEEE.

Mode division multiplexing exploring hollow-core photonic bandgap fibers

We review our recent exploratory investigations on mode division multiplexing using hollow-core photonic bandgap fibers (HC-PBGFs). Compared with traditional multimode fibers, HC-PBGFs have several attractive features such as ultra-low nonlinearities, low-loss transmission window around 2 μm etc. After having discussed the potential and challenges of using HC-PBGFs as transmission fibers for mode multiplexing applications, we will report a number of recent proof-of-concept results obtained in our group using direct detection receivers. The first one is the transmission of two 10.7 Gbit/s non-return to zero (NRZ) data signals over a 30 m 7-cell HC-PBGF using the offset mode launching method. In another experiment, a short piece of 19-cell HC-PBGF was used to transmit two 20 Gbit/s NRZ channels using a spatial light modulator for precise mode excitation. Bit-error-ratio (BER) performances below the forward-error-correction (FEC) threshold limit (3.3×10-3) are confirmed for both data channels when they propagate simultaneously. © 2013 IEEE.

A global assessment of manufacturing: Economic development, energy use, carbon emissions, and the potential for energy efficiency and materials recycling

We present in two parts an assessment of global manufacturing. In the first part, we review economic development, pollution, and carbon emissions from a country perspective, tracking the rise of China and other developing countries. The results show not only a rise in the economic fortunes of the newly industrializing nations, but also a significant rise in global pollution, particularly air pollution and CO2 emissions largely from coal use, which alter and even reverse previous global trends. In the second part, we change perspective and quantitatively evaluate two important technical strategies to reduce pollution and carbon emissions: energy efficiency and materials recycling. We subdivide the manufacturing sector on the basis of the five major subsectors that dominate energy use and carbon emissions: (a) iron and steel, (b) cement, (c) plastics, (d) paper, and (e) aluminum. The analysis identifies technical constraints on these strategies, but by combined and aggressive action, industry should be able to balance increases in demand with these technical improvements. The result would be high but relatively flat energy use and carbon emissions. The review closes by demonstrating the consequences of extrapolating trends in production and carbon emissions and suggesting two options for further environmental improvements, materials efficiency, and demand reduction. © 2013 by Annual Reviews. All rights reserved.

Effect of bandgap narrowing on performance of modern power devices

The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected. © 2013 IEEE.

Fracture of brittle lattice materials: A review

The mechanics of failure for elastic-brittle lattice materials is reviewed. Closed-form expressions are summarized for fracture toughness as a function of relative density for a wide range of periodic lattices. A variety of theoretical and numerical approaches has been developed in the literature and in the main the predictions coincide for any given topology. However, there are discrepancies and the underlying reasons for these are highlighted. The role of imperfections at the cell wall level can be accounted for by Weibull analysis. Nevertheless, defects can also arise on the meso-scale in the form of misplaced joints, wavy cell walls and randomly distributed missing cell walls. These degrade the macroscopic fracture toughness of the lattice. © 2010 Springer Science+Business Media B.V.

Mechanical and fracture properties of cement-based bi-materials after thermal cycling

This study investigates the effect of thermal cycles on the fracture properties of the cement-based bi-materials. Sixty eight cubes were exposed to a varied number of 24-hour thermal cycles ranging from 0 to 90 and subsequently were tested in a wedge splitting configuration. The mechanical and fracture properties of normal strength and high strength concretes are substantially improved after 30 thermal cycles, but less so after 90 thermal cycles both in isolation and when bonded to an ultra high-performance fibre-reinforced cement-based composite. © 2009 Elsevier Ltd. All rights reserved.

Band gap opening of graphene after UV/ozone and oxygen plasma treatments

Graphene grown by Chemical Vapor Deposition (CVD) on nickel subsrate is oxidized by means of oxygen plasma and UV/Ozone treatments to introduce bandgap opening in graphene. The degree of band gap opening is proportional to the degree of oxidation on the graphene. This result is analyzed and confirmed by Scanning Tunnelling Microscopy/Spectroscopy and Raman spectroscopy measurements. Compared to conventional wet-oxidation methods, oxygen plasma and UV/Ozone treatments do not require harsh chemicals to perform, allow faster oxidation rates, and enable site-specific oxidation. These features make oxygen plasma and UV/Ozone treatments ideal candidates to be implemented in high-throughput fabrication of graphene-based microelectronics. © 2011 Materials Research Society.

Optimising the dynamic performance of an all-wide-bandgap cascode switch

A SPICE simulation model of a novel cascode switch that combines a high voltage normally-on silicon carbide (SiC) junction field effect transistor (JFET) with a low voltage enhancement-mode gallium nitride field effect transistor (eGaN FET) has been developed, with the aim of optimising cascode switching performance. The effect of gate resistance on stability and switching losses is investigated and optimum values chosen. The effects of stray inductance on cascode switching performance are considered and the benefits of low inductance packaging discussed. The use of a positive JFET gate bias in a cascode switch is shown to reduce switching losses as well as reducing on-state losses. The findings of the simulation are used to produce a list of priorities for the design and layout of wide-bandgap cascode switches, relevant to both SiC and GaN high voltage devices. © 2013 IEEE.