Growth and characterisation of tin dichalcogenide crystals

During the past few decades, a wide spread interest in the structural, optical, electrical and other physical properties of the transition metal dichalcogenide layer compounds has evolved. The members of this family of compounds can be regarded as strongly bonded two dimensional chalcogen-metal~chalcogen layers which are loosely coupled to one another by the weak ven der Waal's forces. Because of this type of bonding, the crystals are easily cleavable along the basal plane and show highly anisotropic properties. This thesis contains the growth and the study of the physical properties of certain tin dichalcogenide crystals (SnS2 and SnSe2). Tin disulphide and tin diselenide crystallize in the hexagonal CdI2 type crystal structure. This structure consists of layers of tin atoms sandwiched between two layers of chalcogen atoms. A tin atom is surrounded by six chalcogen atoms octahedrally.In the layers the atoms are held together by covalent bonding and in between the layers there is van der Waal's bonding.

Growth and characterisation of tin dichalcogenide crystals

During the past few decades, a wide spread interest in the structural, optical, electrical and other physical properties of the transition metal dichalcogenide layer compounds has evolved. The members of this family of compounds can be regarded as stronglybonded two dimensional chalcogen-metal-chalcogen layers which are loosely coupled to one another by the weak van der Waal's forces. Because of this type of bonding, the crystals are easily cleavable along the basal plane and show highly anisotropic properties. This thesis contains the growth and the study of the physical properties of certain tin dichalcogenide crystals (SnS2 and Snsea). Tin disulphide and tin diselenide crystallize in the hexagonal CdI2 type crystalstructure. This structure consists of layers of tin atoms sandwiched between two layers of chalcogen atoms. Aitin atom is surrounded by six chalcogen atoms octahedrally. In the layers the atoms are held together by covalent bonding and in between the layers there is van der Waal's bonding.

Threading dislocation lines in two-sided flux-array decorations

Two-sided flux decoration experiments indicate that threading dislocation lines (TDLs), which cross the entire film, are sometimes trapped in metastable states. We calculate the elastic energy associated with the meanderings of a TDL. The TDL behaves as an anisotropic and dispersive string with thermal fluctuations largely along its Burgers vector. These fluctuations also modify the structure factor of the vortex solid. Both effects can, in principle, be used to estimate the elastic moduli of the material.

Preparation and characterization of micro and nano fiber reinforced natural rubber composites by latex stage processing

Use of short fibers as reinforcing fillers in rubber composites is on an increasing trend. They are popular due to the possibility of obtaining anisotropic properties, ease of processing and economy. In the preparation of these composites short fibers are incorporated on two roll mixing mills or in internal mixers. This is a high energy intensive time consuming process. This calls for developing less energy intensive and less time consuming processes for incorporation and distribution of short fibers in the rubber matrix. One method for this is to incorporate fibers in the latex stage. The present study is primarily to optimize the preparation of short fiber- natural rubber composite by latex stage compounding and to evaluate the resulting composites in terms of mechanical, dynamic mechanical and thermal properties. A synthetic fiber (Nylon) and a natural fiber (Coir) are used to evaluate the advantages of the processing through latex stage. To extract the full reinforcing potential of the coir fibers the macro fibers are converted to micro fibers through chemical and mechanical means. The thesis is presented in 7 chapters

Single Frame Image Super Resolution Using Learned Directionlets

In this paper, a new directionally adaptive, learning based, single image super resolution method using multiple direction wavelet transform, called Directionlets is presented. This method uses directionlets to effectively capture directional features and to extract edge information along different directions of a set of available high resolution images .This information is used as the training set for super resolving a low resolution input image and the Directionlet coefficients at finer scales of its high-resolution image are learned locally from this training set and the inverse Directionlet transform recovers the super-resolved high resolution image. The simulation results showed that the proposed approach outperforms standard interpolation techniques like Cubic spline interpolation as well as standard Wavelet-based learning, both visually and in terms of the mean squared error (mse) values. This method gives good result with aliased images also.

Image Denoising Using Sure-Based Adaptive Thresholding In Directionlet Domain

The standard separable two dimensional wavelet transform has achieved a great success in image denoising applications due to its sparse representation of images. However it fails to capture efficiently the anisotropic geometric structures like edges and contours in images as they intersect too many wavelet basis functions and lead to a non-sparse representation. In this paper a novel de-noising scheme based on multi directional and anisotropic wavelet transform called directionlet is presented. The image denoising in wavelet domain has been extended to the directionlet domain to make the image features to concentrate on fewer coefficients so that more effective thresholding is possible. The image is first segmented and the dominant direction of each segment is identified to make a directional map. Then according to the directional map, the directionlet transform is taken along the dominant direction of the selected segment. The decomposed images with directional energy are used for scale dependent subband adaptive optimal threshold computation based on SURE risk. This threshold is then applied to the sub-bands except the LLL subband. The threshold corrected sub-bands with the unprocessed first sub-band (LLL) are given as input to the inverse directionlet algorithm for getting the de-noised image. Experimental results show that the proposed method outperforms the standard wavelet-based denoising methods in terms of numeric and visual quality

Development of Directionally Adaptive Techniques for Single Image Super-Resolution

Super Resolution problem is an inverse problem and refers to the process of producing a High resolution (HR) image, making use of one or more Low Resolution (LR) observations. It includes up sampling the image, thereby, increasing the maximum spatial frequency and removing degradations that arise during the image capture namely aliasing and blurring. The work presented in this thesis is based on learning based single image super-resolution. In learning based super-resolution algorithms, a training set or database of available HR images are used to construct the HR image of an image captured using a LR camera. In the training set, images are stored as patches or coefficients of feature representations like wavelet transform, DCT, etc. Single frame image super-resolution can be used in applications where database of HR images are available. The advantage of this method is that by skilfully creating a database of suitable training images, one can improve the quality of the super-resolved image. A new super resolution method based on wavelet transform is developed and it is better than conventional wavelet transform based methods and standard interpolation methods. Super-resolution techniques based on skewed anisotropic transform called directionlet transform are developed to convert a low resolution image which is of small size into a high resolution image of large size. Super-resolution algorithm not only increases the size, but also reduces the degradations occurred during the process of capturing image. This method outperforms the standard interpolation methods and the wavelet methods, both visually and in terms of SNR values. Artifacts like aliasing and ringing effects are also eliminated in this method. The super-resolution methods are implemented using, both critically sampled and over sampled directionlets. The conventional directionlet transform is computationally complex. Hence lifting scheme is used for implementation of directionlets. The new single image super-resolution method based on lifting scheme reduces computational complexity and thereby reduces computation time. The quality of the super resolved image depends on the type of wavelet basis used. A study is conducted to find the effect of different wavelets on the single image super-resolution method. Finally this new method implemented on grey images is extended to colour images and noisy images

A crack on the interface of piezo-electric bodies

Singularities of elastic and electric fields are investigated at the tip of a crack on the interface of two anisotropic piezo-electric media under various boundary conditions on the crack surfaces. The Griffith formulae are obtained for increments of energy functionals due to growth of the crack and the notion of the energy release matrix is introduced. Normalization conditions for bases of singular solution are proposed to adapt them to the energy, stress, and deformation fracture criteria. Connections between these bases are determined and additional properties of the deformation basis related to the notion of electric surface enthalpy are established.

Lithography-free micro- and nanostructuring based on conventional plasma etching

In now-a-days semiconductor and MEMS technologies the photolithography is the working horse for fabrication of functional devices. The conventional way (so called Top-Down approach) of microstructuring starts with photolithography, followed by patterning the structures using etching, especially dry etching. The requirements for smaller and hence faster devices lead to decrease of the feature size to the range of several nanometers. However, the production of devices in this scale range needs photolithography equipment, which must overcome the diffraction limit. Therefore, new photolithography techniques have been recently developed, but they are rather expensive and restricted to plane surfaces. Recently a new route has been presented - so-called Bottom-Up approach - where from a single atom or a molecule it is possible to obtain functional devices. This creates new field - Nanotechnology - where one speaks about structures with dimensions 1 - 100 nm, and which has the possibility to replace the conventional photolithography concerning its integral part - the self-assembly. However, this technique requires additional and special equipment and therefore is not yet widely applicable. This work presents a general scheme for the fabrication of silicon and silicon dioxide structures with lateral dimensions of less than 100 nm that avoids high-resolution photolithography processes. For the self-aligned formation of extremely small openings in silicon dioxide layers at in depth sharpened surface structures, the angle dependent etching rate distribution of silicon dioxide against plasma etching with a fluorocarbon gas (CHF3) was exploited. Subsequent anisotropic plasma etching of the silicon substrate material through the perforated silicon dioxide masking layer results in high aspect ratio trenches of approximately the same lateral dimensions. The latter can be reduced and precisely adjusted between 0 and 200 nm by thermal oxidation of the silicon structures owing to the volume expansion of silicon during the oxidation. On the basis of this a technology for the fabrication of SNOM calibration standards is presented. Additionally so-formed trenches were used as a template for CVD deposition of diamond resulting in high aspect ratio diamond knife. A lithography-free method for production of periodic and nonperiodic surface structures using the angular dependence of the etching rate is also presented. It combines the self-assembly of masking particles with the conventional plasma etching techniques known from microelectromechanical system technology. The method is generally applicable to bulk as well as layered materials. In this work, layers of glass spheres of different diameters were assembled on the sample surface forming a mask against plasma etching. Silicon surface structures with periodicity of 500 nm and feature dimensions of 20 nm were produced in this way. Thermal oxidation of the so structured silicon substrate offers the capability to vary the fill factor of the periodic structure owing to the volume expansion during oxidation but also to define silicon dioxide surface structures by selective plasma etching. Similar structures can be simply obtained by structuring silicon dioxide layers on silicon. The method offers a simple route for bridging the Nano- and Microtechnology and moreover, an uncomplicated way for photonic crystal fabrication.

Thermische Stabilität und Modifizierung der magnetischen Austauschanisotropie in Schichtsystemen

In dünnen Schichtsystemen, in denen es Grenzflächen zwischen antiferromagnetischen (AF) und ferromagnetischen (FM) Bereichen gibt, kann eine unidirektionale magnetische Anisotropie beobachtet werden: die Austauschanisotropie, auch "Exchange-Bias Effekt" genannt. Die Austauschanisotropie ist die Folge einer magnetischen Kopplung zwischen AF und FM. Makroskopisch äußert sich diese Anisotropie in einer Verschiebung der Magnetisierungskurve entlang der Magnetfeldachse. Anwendung findet die Austauschanisotropie z. B. in Spin-Valve Sensoren, deren Funktionsprinzip auf dem Riesen-Magnetowiderstand (engl. giant magnetoresistance, GMR) beruht. Die (thermische) Stabilität der Austauschanisotropie ist eine wichtige Voraussetzung für technische Anwendungen. Im Rahmen dieser Arbeit wurde untersucht, durch welche Materialeigenschaften die Austauschanisotropie in Schichtsystemen mit antiferromagnetischem Nickeloxid (NiO) bestimmt wird. Die Schichten wurden durch (reaktive) Kathodenzerstäubung hergestellt. Durch Variation der Depositionsbedingungen wurden Zusammensetzung und Struktur der NiO-Schichten verändert. Die Ergebnisse systematischer Analysen dieser Größen werden aufgeführt. Der Vergleich dieser Materialanalysen mit magnetischen Messungen an NiO/NiFe Schichtsystemen fšuhrt zu dem Ergebnis, dass die chemische Zusammensetzung und die Struktur der NiO-Schichten die thermische Stabilität der Austauschanisotropie entscheidend beeinflussen. Es wird zusätzlich gezeigt, dass die Stabilität der Austauschanisotropie durch einen Temperprozess im Anschluss an die Herstellung der Schichtsysteme entscheidend verbessert werden kann. Thermisch aktivierte, magnetische Relaxationsprozesse können außerdem zur Erhöhung der Austauschanisotropie führen. Des Weiteren werden zwei neuartige Methoden zur Modifizierung der Austauschanisotropie vorgestellt. Dabei wird gezeigt, dass durch die Bestrahlung der Schichtsysteme mit Helium-Ionen die magnetischen Eigenschaften der Schichtsysteme gezielt verändert und optimiert werden können. Der Einfluss der Ionenbestrahlung auf die Austauschanisotropie in NiO/NiFe Schichtsystemen und auf den Magnetowiderstand in FeMn basierten Spin-Valves steht dabei im Vordergrund der experimentellen Untersuchungen. Eine weitere Möglichkeit zur Modifizierung der Austauschanisotropie ist die Bestrahlung der Schichtsysteme mit kurzen Laserpulsen. Durch einen thermomagnetischen Prozess kann die Austauschanisotropie lokal verändert werden. Experimentelle Ergebnisse von diesem hier erstmals verwendeten Verfahren werden vorgestellt und interpretiert. Mit den beiden genannten Methoden ist es möglich, die Eigenschaften der Austauschanisotropie in Schichtsystemen nachträglich gezielt zu modifizieren.

Recent experimental results from spectroscopy of superheavy quasiatoms

The concept of a "Superheavy Quasiatom" is discussed. Radiative transition times are compared with the lifetime of the intermediate system, cross sections are calculated within a two-collision model and induced transitions and their anisotropic emission are discussed. Recent experimental and theoretical results are presented from collision systems obtained with I-beams bombarding various heavy targets, giving combined Z-values between 120 and 145. Results include the energy dependence of the peak structure interpreted as M X-rays from superheavy quasiatoms and the anisotropy of X-ray emission referred to the beam direction. The data are discussed within the models available. These cannot explain the streng emission of anisotropic radiation in the X-ray energy range of quasiatomic M X-rays at small bombarding energies.