The influence of internal electric fields on the transition energy of InGaN/gaN quantum well

We present a new way to meet the amount of strain relaxation in an InGaN quantum well layer grown on relaxed GaN by calculating and measuring its internal field. With perturbation theory, we also calculate the transition energy of InGaN/GaN SQWs as affected by internal fields. The newly reported experimental data by Graham et al. fit our calculations well on the assumption that the InGaN well layer suffered a 20% strain relaxation, we discuss the differences between our calculated results and the experimental data. Our calculation suggests that with the increase of indium mole fraction in the InGaN/GaN quantum well, the effect of polarization fields on the luminescence of the quantum well will increase. Moreover, our calculation also suggests that an increase in the quantum well width by only one monolayer can result in a large reduction in the transition energy. (c) 2006 Elsevier B.V. All rights reserved.

The image coding scheme based on neural network and SVM

This paper applies data coding thought, which based on the virtual information source modeling put forward by the author, to propose the image coding (compression) scheme based on neural network and SVM. This scheme is composed by "the image coding (compression) scheme based oil SVM" embedded "the lossless data compression scheme based oil neural network". The experiments show that the scheme has high compression ratio under the slightly damages condition, partly solve the contradiction which 'high fidelity' and 'high compression ratio' cannot unify in image coding system.

Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser

We have demonstrated passive mode-locking in a diode-end-pumped Nd:YVO4 laser using two kinds of semiconductor absorbers whose relaxation region comes from In0.25Ga0.75As grown at low temperature (LT) and GaAs/air interface respectively Mode-locking, using absorbers of the GaAs/air interface relaxation region, has the characteristics of less Q-switching tendency and higher average output power than that using absorbers of LT In0.25Ga0.75As relaxation region, but is not as stable as the latter.

Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots

The excitation transfer processes in vertically self organized pairs of unequal-sized quantum dots (QD's), which are created in InAs/GaAs bilayers with different InAs deposition amounts in the first and second layers, have been investigated experimentally by photoluminescence technique. The distance between the two dot layers is varied from 3 to 12 nm. The optical properties of the formed pairs of unequal-sized QD's with clearly discernible ground-state transition energy depend on the spacer thickness. When the spacer layer of GaAs is thin enough, only one photoluminescence peak related to the large QD ensemble has been observed as a result of strong electronic coupling in the InAs QD pairs. The results provide evidence for nonresonant energy transfer from the smaller QDs in the second layer to the larger QD's in the first layer in such an asymmetric QD pair.

Bloch oscillation under a bichromatic laser: Dynamical delocalization and localization, persistent terahertz emission, and harmonics generation

A novel AC driving configuration is proposed for biased semiconductor superlattices, in which the THz driving is provided by an intense bichromatic cw laser in the visible light range. The frequency difference between two components of the laser is resonant with the Bloch oscillation. Thus, multi-photon processes mediated by the conduction (valence) band states lead to dynamical delocalization and localization of the valence (conduction) electrons, and to the formation and collapse of quasi-minibands. Thus, driven Bloch oscillators are predicted to generate persistent THz emission and harmonics of the dipole field, which are tolerant of the exciton and the relaxation effects.

Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy

The deposition of InxGa1-xAs (0.2 less than or equal to x less than or equal to 0.5) on (311)B GaAs surfaces using solid source molecular beam epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed that homogeneous quantum dots could be formed on (311)B GaAs surface when indium composition was around 0.4. Indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. Compared with other surface orientation, (100) and (n11) A/B (n=1,2,3), photoluminescence measurement confirmed that (311)B surface is the most advantageous in fabricating uniform and dense quantum dots.

Binding energy of excitons bound to neutral donors in two-dimensional semiconductors

The binding energies of excitons bound to neutral donors in two-dimensional (2D) semiconductors within the spherical-effective-mass approximation, which are nondegenerate energy bands, have been calculated by a variational method for a relevant range of the effective electron-to-hole mass ratio sigma. The ratio of the binding energy of a 2D exciton bound to a neutral donor to that of a 2D neutral donor is found to be from 0.58 to 0.10. In the limit of vanishing sigma and large sigma, the results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

基于机群架构的并行数据库实现技术研究

在总结了现有并行数据库实现模型的基础上,基于"半重写变换"模型[1]实现了一个并行数据库系统的原型。通过对数据划分/重划分、并行选择、并行排序、并行连接等关键操作的实验分析,指出了"半重写变换"模型存在的缺陷,并提出了一种混合式的改进模型。从理论上说,在机群架构下实现并行数据库系统,这种混合模型较单一模型更有优势。

MPI同步通信顺序模型死锁静态检测算法

静态检测MPI程序同步通信死锁比较困难,通常需要建立程序模型.顺序模型是其他所有复杂模型的基础.通过一种映射方法将顺序模型转化为字符串集合,将死锁检测问题转化为等价的多队列字符申匹配问题,从而设计并实现了一种MPI同步通信顺序模型的静态死锁检测算法.该算法的性能优于通常的环检测方法,并能适应动态消息流.

侵蚀环境人工灌木林土壤活性有机碳与碳库管理指数演变

采用时空互代法,以黄土丘陵区纸坊沟流域生态恢复过程中不同年限的人工柠条和沙棘林为研究对象,选取坡耕地和天然侧柏林为对照,分析了植被恢复过程中土壤有机碳(TOC)、活性有机碳(LOC)、非活性有机碳(NLOC)及碳库管理指数的演变特征。结果表明,侵蚀环境下的坡耕地由于人为干扰,土壤碳库含量偏低,退耕营造柠条林可以显著增加土壤碳库各组分含量,并随恢复年限呈显著线性关系,25 a时TOC、LOC和NLOC分别较坡耕地增加271%、144%和204%,仅为侧柏林的32%、30%和29%,碳库指数和碳库管理指数较坡耕地明显增加,增幅分别达到144%和108%,仅为侧柏林的28%和43%;不同灌木林对土壤碳库管理的改善作用不同,恢复年限相同的沙棘林土壤碳库组分含量和管理指数明显高于柠条林,坡耕地营造灌木林后土壤经营和管理水平得到了显著改善,土壤系统向着良性方向转变。相关性分析表明有机碳、活性有机碳、非活性有机碳、碳库指数、碳库管理指数与土壤主要肥力因子相关性极其密切,可以作为反映生态恢复过程土壤质量演变的指标。

南海东北部下地壳高速层的成因探讨

通过对南海北部大陆边缘地壳结构分析，指出南海东北部存在下地壳高速层，