Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

The investigation on dynamic fracture behavour of materials under compressive-shear combined stress waves

In this paper, an improved plate impact experimental technique is presented for studying dynamic fracture mechanism of materials, under the conditions that the impacting loading is provided by a single pulse and the loading time is in the sub-microsecond range. The impacting tests are carried out on the pressure-shear gas gun. The loading rate achieved is dK/dt similar to 10(8) MPa m(1/2) s(-1). With the elimination of influence of the specimen boundary, the plane strain state of a semi-infinite crack in an infinite elastic plate is used to simulate the deformation fields of crack tip. The single pulses are obtained by using the "momentum trap" technique. Therefore, the one-time actions of the single pulse are achieved by eradicating the stress waves reflected from the specimen boundary or diffracted from the crack surfaces. In the current study, some important phenomena have been observed. The special loading of the single pulse can bring about material damage around crack tip, and affect the material behavior, such as kinking and branching of the crack propagation. Failure mode transitions from mode I to mode II crack are observed under asymmetrical impact conditions. The mechanisms of the dynamic crack propagation are consistent with the damage failure model.

Stress state in front of a crack perpendicular to bimaterial interface

Using a dislocation simulation approach, the basic equation for a crack perpendicular to a bimaterial interface is formulated in this paper. A novel expansion method is proposed for solving the problem. The complete solution for the problem, including the T stress ahead of the crack tip and the stress intensity factors are presented. The stress field characteristics are analyzed in detail. It is found that ahead of the crack tip and near the interface the normal stress, perpendicular to the crack plane, sigma(x), is characterized by the K fields and the normal stress sigma(y) is dominated by the K field plus T stress in the region of 0 < r/b < 0.4 for b/a(0) less than or equal to 0.1, where b is the distance from the crack tip to the interface.

Surface Stress Induced By Adatoms Adsorption On Solid Surfaces

Based on the statistical thermodynamics theory, a theoretical model of adsorbate induced surface stress of adatoms adsorption on solid surface is presented. For the low coverage, the interaction between the adsorbed molecules is entirely negligible and the adsorption induced surface stress is found to be the function of the coverage and the adsorption energy change with strain. For the high coverage, the adsorbate-adsorbate interaction contributes to the adsorption-induced surface stress effectively. In the case of carbon adsorption on the Ni(100) surface, the value of 0.5 is obtained as a characteristic coverage to decide whether to take the interaction between the adsorabtes into consideration and the results also show that the adsorption induces a compressive surface stress.

Residual Stress And Deformation Analysis Of Anodic Bonded Multi-Layer Of Glass And Aluminum

The bonding of glass wafer to aluminum foils in multi-layer assemblies was made by the common anodic bonding process. The bonding was performed at temperatures in the range 350-450 degrees C and with an applied voltage in the range 400-700 V under a pressure of 0.05 MPa. Residual stress and deformation in samples of two-layer (aluminum/glass) and three-layer (glass/aluminum/glass) were analyzed by nonlinear finite element simulation software MARC. The stress and strain varying with cooling time were obtained. The analyzed results show that deformation of the three-layer sample is significantly smaller than that of the two-layer sample, because of the symmetric structure of the three-layer sample. This has an important advantage in MEMS fabrication. The maximum equivalent stresses locate in the transition layer in both samples, which will become weakness in bonded sample.

Derivation Of A Nonlinear Reynolds Stress Model Using Renormalization Group Analysis And Two-Scale Expansion Technique

Adopting Yoshizawa's two-scale expansion technique, the fluctuating field is expanded around the isotropic field. The renormalization group method is applied for calculating the covariance of the fluctuating field at the lower order expansion. A nonlinear Reynolds stress model is derived and the turbulent constants inside are evaluated analytically. Compared with the two-scale direct interaction approximation analysis for turbulent shear flows proposed by Yoshizawa, the calculation is much more simple. The analytical model presented here is close to the Speziale model, which is widely applied in the numerical simulations for the complex turbulent flows.

Interface Layer Effect On The Stress Distribution Of A Wafer-Bonded Bilayer Structure

The interface layer plays an important role in stress transfer in composite structures. However, many interface layer properties such as the modulus, thickness, and uniformity are difficult to determine. The model developed in this article links the influence of the interface layer on the normal stress distribution along the layer thickness with the layer surface morphology before bonding. By doing so, a new method of determining the interfacial parameter(s) is suggested. The effects of the layer thickness and the surface roughness before bonding on the normal stress distribution and its depth profile are also discussed. For ideal interface case with no interfacial shear stress, the normal stress distribution pattern can only be monotonically decreased from the interface. Due to the presence of interfacial shear stress, the normal stress distribution is much more complex, and varies dramatically with changes in the properties of the interface layer, or the dimensions of the bonding layers. The consequence of this dramatic stress field change, such as the shift of the maximum stress from the interface is also addressed. The size-dependent stress distribution in the thickness direction due to the interface layer effect is presented. When the interfacial shear stress is reduced to zero, the model presented in this article is also demonstrated to have the same normal stress distribution as obtained by the previous model, which does not consider the interface layer effect.

Stress intensity factor histories of a steadily propagating crack under 3-D combined mode traction

Elastodynamic stress intensity factor histories of an unbounded solid containing a semi-infinite plane crack that propagates at a constant velocity under 3-D time-independent combined mode loading are considered. The fundamental solution, which is the response of point loading, is obtained. Then, stress intensity factor histories of a general loading system are written out in terms of superposition integrals. The methods used here are the Laplace transform methods in conjunction with the Wiener-Hopf technique.

A second-order dynamic subgrid-scale stress model

A second-order dynamic model based on the general relation between the subgrid-scale stress and the velocity gradient tensors was proposed. A priori test of the second-order model was made using moderate resolution direct numerical simulation date at high Reynolds number ( Taylor microscale Reynolds number R-lambda = 102 similar to 216) for homogeneous, isotropic forced flow, decaying flow, and homogeneous rotating flow. Numerical testing shows that the second-order dynamic model significantly improves the correlation coefficient when compared to the first-order dynamic models.

Influence of threshold stress on the estimation of the Weibull statistics

The influence of threshold stress on the estimation of the Weibull statistics is discussed in terms of the Akaike information criterion. Numerical simulations show that, if sample data are limited in number and threshold stress is not too large, the two-parameter Weibull distribution is still a preferred choice. For example, the fit of strength data of glass and ceramics to the two- and three-parameter Weibull distributions is compared.

Electrothermal stress in conductive body with collinear cracks

The temperature and stress field in a thin plate with collinear cracks interrupting an electric current field are determined. This is accomplished by using a complex function method that allows a direct means of finding the distribution of the electric current, the temperature and stress field. Temperature dependency for the heat-transfer coefficient, coefficient of linear expansion and the elastic modulus are considered. As an example, temperature distribution is calculated for an alloy (No. GH2132) plate with two collinear cracks under high temperature. Relationships between the stress, temperature, electric density and crack length are obtained. Crack trajectories emanating from existing crack are predicted by application of the strain energy density criterion which can also be used for finding the load carrying capacity of the cracked plate. (C) 2003 Elsevier Ltd. All rights reserved.