Transmission of simultaneous 10Gb/s ethernet and radioover-fibre transmission using in-band coding

A technique using spectrum-shaping codes to create nulls in the baseband spectrum of an Ethernet signal, so that several RF signals can be inserted in-band, is demonstrated by simultaneous transmission of 10GbE and WCDMA signals. © 2013 OSA.

Functionally different pads on the same foot allow control of attachment: stick insects have load-sensitive "heel" pads for friction and shear-sensitive "toe" pads for adhesion.

Stick insects (Carausius morosus) have two distinct types of attachment pad per leg, tarsal "heel" pads (euplantulae) and a pre-tarsal "toe" pad (arolium). Here we show that these two pad types are specialised for fundamentally different functions. When standing upright, stick insects rested on their proximal euplantulae, while arolia were the only pads in surface contact when hanging upside down. Single-pad force measurements showed that the adhesion of euplantulae was extremely small, but friction forces strongly increased with normal load and coefficients of friction were [Formula: see text] 1. The pre-tarsal arolium, in contrast, generated adhesion that strongly increased with pulling forces, allowing adhesion to be activated and deactivated by shear forces, which can be produced actively, or passively as a result of the insects' sprawled posture. The shear-sensitivity of the arolium was present even when corrected for contact area, and was independent of normal preloads covering nearly an order of magnitude. Attachment of both heel and toe pads is thus activated partly by the forces that arise passively in the situations in which they are used by the insects, ensuring safe attachment. Our results suggest that stick insect euplantulae are specialised "friction pads" that produce traction when pressed against the substrate, while arolia are "true" adhesive pads that stick to the substrate when activated by pulling forces.

Shear transfer across a diagonal crack in reinforced concrete strengthened with externally bonded FRP fabric

Aging concrete infrastructure in developed economies and more recently constructed concrete infrastructure in the developing world are frequently found to be deficient in structural strength relative to current needs. This can be attributed to a variety of factors including deterioration, construction defects, accidental damage, changes in understanding and failure to design for future loading requirements. Strengthening existing concrete structures can be a cost and carbon effective alternative to replacement. A competitive option for the strengthening of concrete slab-on-beam structures that are deficient in shear capacity is the U-wrapping of the down-stand beam portion of the shear span with externally bonded FRP fabric. While guidance exists for the strengthening of reinforced concrete by U-wrapping, the interaction between internal steel reinforcement, concrete and external FRP in the presence of a dominant diagonal shear crack is not well understood. An approach adopted in previous work has been to explore this interaction through conventional push-off testing. In conventional push-off testing, unlike in a beam, the shear plane is parallel to the direction of loading and perpendicular to the principal fibre orientation. This paper presents a novel push-off test variation in which the shear plane is inclined at 45° to the direction of loading and the principal fibre orientation. A variety of reinforcement ratios, FRP thicknesses and FRP end conditions are modelled. The implications of inclined cracking on debonding of FRP are investigated. The suitability and relevance of inclined push-off tests for further work in this area is also assessed. © 2013, NetComposite Limited.

Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

Band gap opening of graphene after UV/ozone and oxygen plasma treatments

Graphene grown by Chemical Vapor Deposition (CVD) on nickel subsrate is oxidized by means of oxygen plasma and UV/Ozone treatments to introduce bandgap opening in graphene. The degree of band gap opening is proportional to the degree of oxidation on the graphene. This result is analyzed and confirmed by Scanning Tunnelling Microscopy/Spectroscopy and Raman spectroscopy measurements. Compared to conventional wet-oxidation methods, oxygen plasma and UV/Ozone treatments do not require harsh chemicals to perform, allow faster oxidation rates, and enable site-specific oxidation. These features make oxygen plasma and UV/Ozone treatments ideal candidates to be implemented in high-throughput fabrication of graphene-based microelectronics. © 2011 Materials Research Society.

Mode multiplexing at 2×20Gbps over 19-cell hollow-core photonic band gap fibre

This paper demonstrates the first mode-multiplexed system over 19-cell hollow-core photonic band gap fibre, at 2×20Gbps using the LP0,1 and LP2,1-like modes. © 2012 OSA.

A thermopile based SOI CMOS MEMS wall shear stress sensor

In this paper we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor based on a tungsten hot-film and three thermopiles. These devices have been fabricated using a commercial 1 μm SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step to create silicon oxide membranes under the hot-film for effective thermal isolation. The sensors show an excellent repeatability of electro-thermal characteristics and can be used to measure wall shear stress in both constant current anemometric as well as calorimetric modes. The sensors have been calibrated for wall shear stress measurement of air in the range of 0-0.48 Pa using a suction type, 2-D flow wind tunnel. The calibration results show that the sensors have a higher sensitivity (up to four times) in calorimetric mode compared to anemometric mode for wall shear stress lower than 0.3 Pa. © 2013 IEEE.

Light-directed writing of chemically tunable narrow-band holographic sensors

This tunable holographic sensor offers interrogation and a reporting transducer as well as an analyte-responsive hydrogel, rendering it label-free and reusable. A single 6 ns laser pulse is used to fabricate holographic sensors consisting of silver nanoparticles arranged periodically within a polymer film. The tunability of the sensor is demonstrated through pH sensing of artificial urine and validated through computational modeling. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mode multiplexing at 2×20Gbps over 19-cell hollow-core photonic band gap fibre

This paper demonstrates the first mode-multiplexed system over 19-cell hollow-core photonic band gap fibre, at 2×20Gbps using the LP0,1 and LP2,1-like modes. © 2012 OSA.

Development of a multidirectional simple shear testing device

A new simple shear testing device capable of applying multidirectional loading to soil specimens has been developed. The Texas A&M University multidirectional simple shear (TAMU-MDSS) device provides the ability to apply a large range of shear stresses and complex loading paths, such as figure-eight and circular patterns, to a cylindrical soil specimen confined by a wire-reinforced membrane. The load and torque experienced by the sample are directly measured by a multi-axis load cell installed above the specimen. Backpressure saturation of the specimen is made possible by the devicés ability to apply pressure in the chamber and backpressure to the water lines. Excess pore pressure is measured by a pressure transducer during the shearing phase of the testing. This paper describes the development of the TAMU-MDSS system and the capabilities of the device and presents test results on saturated clay soil specimens subjected to monotonic, unidirectional cyclic, and multidirectional loading. Copyright © 2013 by ASTM International.

Multi-walled carbon nanotube conductivity enhancement and band gap widening via rapid pulsed thermal annealing

Herein we report on the transport characteristics of rapid pulsed vacuum-arc thermally annealed, individual and network multi-walled carbon nanotubes. Substantially reduced defect densities (by at least an order of magnitude), measured by micro-Raman spectroscopy, and were achieved by partial reconstruction of the bamboo-type defects during thermal pulsing compared with more traditional single-pulse thermal annealing. Rapid pulsed annealed processed networks and individual multi-walled nanotubes showed a consistent increase in conductivity (of over a factor of five at room temperature), attributed to the reduced number density of resistive axial interfaces and, in the case of network samples, the possible formation of structural bonds between crossed nanotubes. Compared to the highly defective as-grown nanotubes, the pulsed annealed samples exhibited reduced temperature sensitivity in their transport characteristics signifying the dominance of scattering events from structural defects. Transport measurements in the annealed multi-walled nanotubes deviated from linear Ohmic, typically metallic, behavior to an increasingly semiconducting-like behavior attributed to thermally induced axial strains. Rapid pulsed annealed networks had an estimated band gap of 11.26 meV (as-grown; 6.17 meV), and this observed band gap enhancement was inherently more pronounced for individual nanotubes compared with the networks most likely attributed to mechanical pinning effect of the probing electrodes which possibly amplifies the strain induced band gap. In all instances the estimated room temperature band gaps increased by a factor of two. The gating performance of back-gated thin-film transistor structures verified that the observed weak semiconductivity (p-type) inferred from the transport characteristic at room temperature. © 2014 Copyright Taylor & Francis Group, LLC.

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

This paper demonstrates on chip sub bandgap detection of light at 1550 nm wavelength using the configuration of interleaved PN junctions along a silicon waveguide. The device operates under reverse bias in a nearly fully depleted mode, thus minimizing the free carrier plasma losses and significantly increases the detection volume at the same time. Furthermore, substantial enhancement in responsivity is observed by the transition from reverse bias to avalanche breakdown regime. The observed high responsivity of up to 7.2 mA/W at 3 V is attributed to defect assisted photogeneration, where the defects are related to the surface and the bulk of the waveguide. © 2014 AIP Publishing LLC.