MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications

The study of III-nitride materials (InN, GaN and AlN) gained huge research momentum after breakthroughs in the production light emitting diodes (LEDs) and laser diodes (LDs) over the past two decades. Last year, the Nobel Prize in Physics was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura for inventing a new energy efficient and environmental friendly light source: blue light-emitting diode (LED) from III-nitride semiconductors in the early 1990s. Nowadays, III-nitride materials not only play an increasingly important role in the lighting technology, but also become prospective candidates in other areas, for example, the high frequency (RF) high electron mobility transistor (HEMT) and photovoltaics. These devices require the growth of high quality III-nitride films, which can be prepared using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is to study and develop the growth of III-nitride films, including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, serving as sample wafers for fabrication of ultraviolet (UV) LEDs, in order to replace the conventional bulky, expensive and environmentally harmful mercury lamp as new UV light sources. For application to UV LEDs, reducing the threading dislocation density (TDD) in AlN epilayers on sapphire substrates is a key parameter for achieving high-efficiency AlGaNbased UV emitters. In Chapter 4, after careful and systematic optimisation， a working set of conditions, the screw and edge type dislocation density in the AlN were reduced to around 2.2×108 cm-2 and 1.3×109 cm-2 , respectively, using an optimized three-step process, as estimated by TEM. An atomically smooth surface with an RMS roughness of around 0.3 nm achieved over 5×5 µm 2 AFM scale. Furthermore, the motion of the steps in a one dimension model has been proposed to describe surface morphology evolution, especially the step bunching feature found under non-optimal conditions. In Chapter 5, control of alloy composition and the maintenance of compositional uniformity across a growing epilayer surface were demonstrated for the development of u-AlGaN epilayers. Optimized conditions (i.e. a high growth temperature of 1245 °C) produced uniform and smooth film with a low RMS roughness of around 2 nm achieved in 20×20 µm 2 AFM scan. The dopant that is most commonly used to obtain n-type conductivity in AlxGa1-xN is Si. However, the incorporation of Si has been found to increase the strain relaxation and promote unintentional incorporation of other impurities (O and C) during Si-doped AlGaN growth. In Chapter 6, reducing edge-type TDs is observed to be an effective appoach to improve the electric and optical properties of Si-doped AlGaN epilayers. In addition, the maximum electron concentration of 1.3×1019 cm-3 and 6.4×1018 cm-3 were achieved in Si-doped Al0.48Ga0.52N and Al0.6Ga0.4N epilayers as measured using Hall effect. Finally, in Chapter 7, studies on the growth of InAlN/AlGaN multiple quantum well (MQW) structures were performed, and exposing InAlN QW to a higher temperature during the ramp to the growth temperature of AlGaN barrier (around 1100 °C) will suffer a significant indium (In) desorption. To overcome this issue, quasi-two-tempeature (Q2T) technique was applied to protect InAlN QW. After optimization, an intense UV emission from MQWs has been observed in the UV spectral range from 320 to 350 nm measured by room temperature photoluminescence.

Differential susceptibility of mitochondrial complex II to inhibition by oxaloacetate in brain and heart

Mitochondrial Complex II is a key mitochondrial enzyme connecting the tricarboxylic acid (TCA) cycle and the electron transport chain. Studies of complex II are clinically important since new roles for this enzyme have recently emerged in cell signalling, cancer biology, immune response and neurodegeneration. Oxaloacetate (OAA) is an intermediate of the TCA cycle and at the same time is an inhibitor of complex II with high affinity (Kd ~ 10− 8 M). Whether or not OAA inhibition of complex II is a physiologically relevant process is a significant, but still controversial topic. We found that complex II from mouse heart and brain tissue has similar affinity to OAA and that only a fraction of the enzyme in isolated mitochondrial membranes (30.2 ± 6.0% and 56.4 ± 5.6% in the heart and brain, respectively) is in the free, active form. Since OAA could bind to complex II during isolation, we established a novel approach to deplete OAA in the homogenates at the early stages of isolation. In heart, this treatment significantly increased the fraction of free enzyme, indicating that OAA binds to complex II during isolation. In brain the OAA-depleting system did not significantly change the amount of free enzyme, indicating that a large fraction of complex II is already in the OAA-bound inactive form. Furthermore, short-term ischemia resulted in a dramatic decline of OAA in tissues, but it did not change the amount of free complex II. Our data show that in brain OAA is an endogenous effector of complex II, potentially capable of modulating the activity of the enzyme.

Multi-Device Selection Scheduling in Non-Identically Distributed Fading Channels

Multiuser selection scheduling concept has been recently proposed in the literature in order to increase the multiuser diversity gain and overcome the significant feedback requirements for the opportunistic scheduling schemes. The main idea is that reducing the feedback overhead saves per-user power that could potentially be added for the data transmission. In this work, the authors propose to integrate the principle of multiuser selection and the proportional fair scheduling scheme. This is aimed especially at power-limited, multi-device systems in non-identically distributed fading channels. For the performance analysis, they derive closed-form expressions for the outage probabilities and the average system rate of the delay-sensitive and the delay-tolerant systems, respectively, and compare them with the full feedback multiuser diversity schemes. The discrete rate region is analytically presented, where the maximum average system rate can be obtained by properly choosing the number of partial devices. They optimise jointly the number of partial devices and the per-device power saving in order to maximise the average system rate under the power requirement. Through the authors’ results, they finally demonstrate that the proposed scheme leveraging the saved feedback power to add for the data transmission can outperform the full feedback multiuser diversity, in non-identical Rayleigh fading of devices’ channels.

Molecular Mechanism of the Response to Hydrogen Sulfide in C. elegans

Thesis (Ph.D.)--University of Washington, 2016-08

Efeito da disponibilidade de oxigénio na produção de bioetanol por Scheffersomyces stipitis

O bioetanol constitui uma alternativa renovável aos combustíveis fósseis. Contudo, o bioetanol de primeira geração, produzido a partir de matérias-primas alimentares, desencadeou sérios problemas económicos e sociais, pelo que é fundamental encontrar estratégias que permitam a viabilidade comercial do bioetanol de segunda geração, produzido a partir de matérias-primas lenho-celulósicas. O licor de cozimento ao sulfito ácido de árvores folhosas (HSSL) é um subproduto da indústria papeleira que, devido ao seu elevado conteúdo em açúcares, pode ser utilizado como substrato para a produção de bioetanol de segunda geração. No entanto, a maior fração dos açúcares do HSSL é composta por pentoses. Por isso, a fermentação do HSSL é realizada pela levedura Scheffersomyces stipitis, pois esta é capaz de fermentar tanto as hexoses como as pentoses. Todavia, a S. stipitis só produz etanol sob condições microaerófilas, pelo que o maior desafio da produção de bioetanol por S. stipitis reside no estabelecimento das condições ótimas de arejamento. Este trabalho teve assim por objetivo estabelecer uma estratégia de arejamento que permita a eficiente produção de bioetanol a partir de HSSL por S. stipitis C4, a qual é uma estirpe adaptada a este substrato. Deste modo, foram realizados ensaios em Erlenmeyer, de modo a caracterizar o crescimento da S. stipitis C4, e ensaios em biorreator, com vista a estudar a produção de etanol por S. stipitis C4 em duas estratégias de arejamento diferentes. Na primeira estratégia foi usado apenas um único estágio de arejamento, com controlo da tensão de oxigénio dissolvido, DOT (%), e na segunda estratégia foram usados dois estágios de arejamento, com controlo da DOT no primeiro estágio e com restrição de oxigénio no segundo estágio. Nos ensaios em Erlenmeyer com HSSL o crescimento da S. stipitis C4 foi completamente inibido. Por sua vez, nos ensaios em biorreator com um único estágio de arejamento o controlo da DOT não permitiu a produção de etanol. No entanto, nos ensaios com dois estágios de arejamento em meio sintético foi possível produzir etanol de forma eficiente. Nesta estratégia, a utilização de um maior valor de DOT no primeiro estágio de arejamento permitiu aumentar a taxa específica de crescimento máxima e o rendimento em biomassa do primeiro estágio. Para além disso, a utilização de um maior valor de DOT no primeiro estágio também permitiu aumentar a produtividade em etanol durante o segundo estágio de arejamento. Por sua vez, no segundo estágio de arejamento verificou-se que a restrição de oxigénio evitou a reassimilação de etanol pela S. stipitis C4. Deste modo, os melhores resultados para a produção de etanol foram obtidos com controlo da DOT a 50% durante o primeiro estágio e com 0 mLAr.min-1 e 250 rpm durante o segundo estágio de arejamento. A aplicação desta estratégia de arejamento a 60% HSSL/40% meio sintético permitiu obter, no primeiro estágio de arejamento, uma taxa específica de crescimento máxima de 0,17 h-1, o que demonstra que a elevada disponibilidade de oxigénio durante o primeiro estágio aumenta a tolerância da S. stipitis C4 aos inibidores. Para além disso, a taxa volumétrica de produção de etanol e o rendimento em etanol de toda a fermentação foi de respetivamente de 0,03 g.L-1.h-1 e 0,38 g.g-1. Assim, a elevada eficiência de conversão dos açúcares em etanol (74,4%) demostra que a fermentação com dois estágios de arejamento constitui uma estratégia promissora para a produção de bioetanol de segunda geração a partir de HSSL.

Investigations on growth ecology and reproduction of Sargassum sp. and Gracilaria on intertidal region in Bandar Lenge

Investigations on growth and quantity of phycocolloids of Sargassum sp. and Gracilaria corticata was done on field and laboratorial works over one year from January 2003 to May 2004. Sargassum thalli began growth from January. The highest biomass value recorded 1611.04 gm^-2 was obtained in November. The receptacles appeared on November and released eggs. The senescence of Sargassum thalli was in December and the new thallus began to grow from January, The highest relative growth rate (6.74 percent) was in February. The relative growth rate showed significant correlation (p<0,05) with temperature. The highest value of alginate was in November (10.02 percent). Alginat content showed significant correlations (p<0.05) with Sargassum biomass. There was no significant effect of environmental factors on alginate content. The highest biomass of Graciiaria was in Match (49.88 gm^-2). Maximum relative growth rate of Gracilara (2 percent) was in December. Relative growth rate of Gracilaria (2.8 percent) was in December. Relative growth rate of Gracilaria showed significant correlations (p<0.05) with temperature. There was significant effect of ammonium (p<0.05) on growth factors of Gracilaria, maximum agar content was in August {10.005 percent). The yield of agar showed significant correlation (p<0.05) with Gracilaria biomass and ammonium in field and laboratory.

Growth and application of planar III-V semiconductor nanowires grown with MOCVD

The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures with interesting optical, electrical, and mechanical properties. III-V nanowires in particular are useful because of their direct bandgap, high carrier mobility, and ability to form heterojunctions and have been used to make devices such as light-emitting diodes, lasers, and field-effect transistors. However, crystal defects are widely reported for III-V nanowires when grown in the common out-of-plane <111>B direction. Furthermore, commercialization of nanowires has been limited by the difficulty of assembling nanowires with predetermined position and alignment on a wafer-scale. In this thesis, planar III-V nanowires are introduced as a low-defect and integratable nanotechnology building block grown with metalorganic chemical vapor deposition. Planar GaAs nanowires grown with gold seed particles self-align along the <110> direction on the (001) GaAs substrate. Transmission electron microscopy reveals that planar GaAs nanowires are nearly free of crystal defects and grow laterally and epitaxially on the substrate surface. The nanowire morphology is shown to be primarily controlled through growth temperature and an ideal growth window of 470 +\- 10 °C is identified for planar GaAs nanowires. Extension of the planar growth mode to other materials is demonstrated through growth of planar InAs nanowires. Using a sacrificial layer, the transfer of planar GaAs nanowires onto silicon substrates with control over the alignment and position is presented. A metal-semiconductor field-effect transistor fabricated with a planar GaAs nanowire shows bulk-like low-field electron transport characteristics with high mobility. The aligned planar geometry and excellent material quality of planar III-V nanowires may lead to highly integrated III-V nanophotonics and nanoelectronics.

Macrophage adaptation leads to parallel evolution of genetically diverseEscherichia colismall-colony variants with increased fitness in vivo and antibiotic collateral sensitivity

Small-colony variants (SCVs) are commonly observed in evolution experiments and clinical isolates, being associated with antibiotic resistance and persistent infections. We recently observed the repeated emergence of Escherichia coli SCVs during adaptation to the interaction with macrophages. To identify the genetic targets underlying the emergence of this clinically relevant morphotype, we performed whole-genome sequencing of independently evolved SCV clones. We uncovered novel mutational targets, not previously associated with SCVs (e.g. cydA, pepP) and observed widespread functional parallelism. All SCV clones had mutations in genes related to the electron-transport chain. As SCVs emerged during adaptation to macrophages, and often show increased antibiotic resistance, we measured SCV fitness inside macrophages and measured their antibiotic resistance profiles. SCVs had a fitness advantage inside macrophages and showed increased aminoglycoside resistance in vitro, but had collateral sensitivity to other antibiotics (e.g. tetracycline). Importantly, we observed similar results in vivo. SCVs had a fitness advantage upon colonization of the mouse gut, which could be tuned by antibiotic treatment: kanamycin (aminoglycoside) increased SCV fitness, but tetracycline strongly reduced it. Our results highlight the power of using experimental evolution as the basis for identifying the causes and consequences of adaptation during host-microbe interactions.

Exploring complex chemical systems: insights from mass spectrometry, electrochemistry and continuous cell culture

The work presented herein covers a broad range of research topics and so, in the interest of clarity, has been presented in a portfolio format. Accordingly, each chapter consists of its own introductory material prior to presentation of the key results garnered, this is then proceeded by a short discussion on their significance. In the first chapter, a methodology to facilitate the resolution and qualitative assessment of very large inorganic polyoxometalates was designed and implemented employing ion-mobility mass spectrometry. Furthermore, the potential of this technique for ‘mapping’ the conformational space occupied by this class of materials was demonstrated. These claims are then substantiated by the development of a tuneable, polyoxometalate-based calibration protocol that provided the necessary platform for quantitative assessments of similarly large, but unknown, polyoxometalate species. In addition, whilst addressing a major limitation of travelling wave ion mobility, this result also highlighted the potential of this technique for solution-phase cluster discovery. The second chapter reports on the application of a biophotovoltaic electrochemical cell for characterising the electrogenic activity inherent to a number of mutant Synechocystis strains. The intention was to determine the key components in the photosynthetic electron transport chain responsible for extracellular electron transfer. This would help to address the significant lack of mechanistic understanding in this field. Finally, in the third chapter, the design and fabrication of a low-cost, highly modular, continuous cell culture system is presented. To demonstrate the advantages and suitability of this platform for experimental evolution investigations, an exploration into the photophysiological response to gradual iron limitation, in both the ancestral wild type and a randomly generated mutant library population, was undertaken. Furthermore, coupling random mutagenesis to continuous culture in this way is shown to constitute a novel source of genetic variation that is open to further investigation.

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In_x≥0.53Ga_1-xAs/In_0.52Al_0.48As and In_x≥0.1Ga_1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm²/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In_0.85Ga_0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L_side) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH₄)₂S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al₂O₃/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×10¹²cm^-2eV^-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I_d,sat=1.14mA/mm), double peaked transconductance (g_m=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R_on=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of I_d,sat (11×), g_m (5.5×) and R_on (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L_side) from 1μm down to 70nm improved I_d,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In_0.3Ga_0.7Sb-channel (I_d,sat=49.4mA/mm, g_m=12.3mS/mm, R_on=31.7kΩ.μm) and In_0.4Ga_0.6Sb-channel (I_d,sat=38mA/mm, g_m=11.9mS/mm, R_on=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.

Life without complex I: proteome analyses of an Arabidopsis mutant lacking the mitochondrial NADH dehydrogenase complex

The mitochondrial NADH dehydrogenase complex (complex I) is of particular importance for the respiratory chain in mitochondria. It is the major electron entry site for the mitochondrial electron transport chain (mETC) and therefore of great significance for mitochondrial ATP generation. We recently described an Arabidopsis thaliana double-mutant lacking the genes encoding the carbonic anhydrases CA1 and CA2, which both form part of a plant-specific 'carbonic anhydrase domain' of mitochondrial complex I. The mutant lacks complex I completely. Here we report extended analyses for systematically characterizing the proteome of the ca1ca2 mutant. Using various proteomic tools, we show that lack of complex I causes reorganization of the cellular respiration system. Reduced electron entry into the respiratory chain at the first segment of the mETC leads to induction of complexes II and IV as well as alternative oxidase. Increased electron entry at later segments of the mETC requires an increase in oxidation of organic substrates. This is reflected by higher abundance of proteins involved in glycolysis, the tricarboxylic acid cycle and branched-chain amino acid catabolism. Proteins involved in the light reaction of photosynthesis, the Calvin cycle, tetrapyrrole biosynthesis, and photorespiration are clearly reduced, contributing to the significant delay in growth and development of the double-mutant. Finally, enzymes involved in defense against reactive oxygen species and stress symptoms are much induced. These together with previously reported insights into the function of plant complex I, which were obtained by analysing other complex I mutants, are integrated in order to comprehensively describe 'life without complex I'.

Reduced graphene oxide wrapped Cu2O supported on C3N4: An efficient visible light responsive semiconductor photocatalyst

Herein, Cu 2O spheres were prepared and encapsulated with reduced graphene oxide (rGO). The Cu 2O–rGO–C3N4 composite covered the whole solar spectrum with significant absorption intensity. rGO wrapped Cu 2O loading caused a red shift in the absorption with respect to considering the absorption of bare C3N4. The photoluminescence study confirms that rGO exploited as an electron transport layer at the interface of Cu 2O and C3N4 heterojunction. Utmost, ∼2 fold synergistic effect was achieved with Cu 2O–rGO–C3N4 for the photocatalytic reduction of 4-nitrophenol to 4-aminophenol in comparison with Cu 2O–rGO and C3N4. The Cu 2O–rGO–C3N4 photocatalyst was reused for four times without loss in its activity.

High On/Off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity

Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. Memristors based on alternative mechanisms have been explored, but achieving both the high On/Off ratio and the low switching energy desirable for use in electronics remains a challenge. Here we report memristive switching in a La_(0.7)Ca_(0.3)MnO_(3)/PrBa_(2)Cu_(3)O_(7) bilayer with an On/Off ratio greater than 103 and demonstrate that the phenomenon originates from a new type of interfacial magnetoelectricity. Using results from firstprinciples calculations, we show that an external electric-field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead” layer, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost about of a tenth of atto Joule for write/erase a “bit”. Our results indicate new opportunities for manganite/cuprate systems and other transition-metal-oxide junctions in memristive applications.

The transition from health to sickness via the chloroplast

Microbe associated molecular pattern (MAMP) receptors in plants recognize MAMPs and activate basal defences; however a complete understanding of the molecular and physiological mechanisms conferring immunity remains elusive. Pathogens suppress active defence in plants through the combined action of effector proteins. This talk presents results showing the chloroplast as a key component of early immune responses. MAMP perception triggers the rapid, large-scale suppression of nuclear encoded chloroplast-targeted genes (NECGs). Virulent Pseudomonas syringae effectors reprogramme NECG expression in Arabidopsis, target the chloroplast and inhibit photosynthetic CO2 assimilation through disruption of photosystem II. This activity prevents a chloroplastic reactive oxygen burst. These physiological changes precede bacterial multiplication and coincide with pathogen-induced abscisic acid (ABA) accumulation. MAMP pretreatment protects chloroplasts from effector manipulation, whereas application of ABA or the inhibitor of photosynthetic electron transport, DCMU, abolishes the MAMP-induced chloroplastic reactive oxygen burst, and enhances growth of a P. syringae hrpA mutant that fails to secrete effectors.

Novel Automotive Waste Heat Recovery Techniques

The United States transportation industry is predicted to consume approximately 13 million barrels of liquid fuel per day by 2025. If one percent of the fuel energy were salvaged through waste heat recovery, there would be a reduction of 130 thousand barrels of liquid fuel per day. This dissertation focuses on automotive waste heat recovery techniques with an emphasis on two novel techniques. The first technique investigated was a combination coolant and exhaust-based Rankine cycle system, which utilized a patented piston-in-piston engine technology. The research scope included a simulation of the maximum mass flow rate of steam (700 K and 5.5 MPa) from two heat exchangers, the potential power generation from the secondary piston steam chambers, and the resulting steam quality within the steam chamber. The secondary piston chamber provided supplemental steam power strokes during the engine's compression and exhaust strokes to reduce the pumping work of the engine. A Class-8 diesel engine, operating at 1,500 RPM at full load, had a maximum increase in the brake fuel conversion efficiency of 3.1%. The second technique investigated the implementation of thermoelectric generators on the outer cylinder walls of a liquid-cooled internal combustion engine. The research scope focused on the energy generation, fuel energy distribution, and cylinder wall temperatures. The analysis was conducted over a range of engine speeds and loads in a two cylinder, 19.4 kW, liquid-cooled, spark-ignition engine. The cylinder wall temperatures increased by 17% to 44% which correlated well to the 4.3% to 9.5% decrease in coolant heat transfer. Only 23.3% to 28.2% of the heat transfer to the coolant was transferred through the TEG and TEG surrogate material. The gross indicated work decreased by 0.4% to 1.0%. The exhaust gas energy decreased by 0.8% to 5.9%. Due to coolant contamination, the TEG output was not able to be obtained. TEG output was predicted from cylinder wall temperatures and manufacturer documentation, which was less than 0.1% of the cumulative heat release. Higher TEG conversion efficiencies, combined with greater control of heat transfer paths, would be needed to improve energy output and make this a viable waste heat recovery technique.