Research on improved methods of reduction of bend loss of silicon-on-insulator waveguides

Improved methods of reduction of bend loss of silicon-on-insulator waveguides were simulated and analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM). The simulation results indicate that two different methods, one of which are introducing an offset at the junction of two waveguides and the other is etching groove at the outside of bend waveguide, can decrease bend loss. And the later one is more effective. Meanwhile, experiments validate them. By etching groove, the insertion loss of bend waveguide of R = 16mm, transverse displacement 70mum was decreased 5dB. And its bend loss was almost eliminated.

Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition

The GaN film was grown on the (111) silicon-on-insulator (SOI) substrate by metal-organic chemical vapor deposition and then annealed in the deposition chamber. A multiple beam optical stress sensor was used for the in-situ stress measurement, and X-ray diffraction (XRD) and Raman spectroscopy were used for the characterization of GaN film. Comparing the characterization results of the GaN films on the bulk silicon and SOI substrates, we can see that the Raman spectra show the 3.0 cm(-1) frequency shift of E-2(TO), and the full width at half maximum of XRD rocking curves for GaN (0002) decrease from 954 arc see to 472 are sec. The results show that the SOI substrates can reduce the tensile stress in the GaN film and improve the crystalline quality. The annealing process is helpful for the stress reduction of the GaN film. The SOI substrate with the thin top silicon film is more effective than the thick top silicon film SOI substrate for the stress reduction. (C) 2007 Elsevier B.V. All rights reserved.

High dimensional imagery geometry and it's applications

Because of information digitalization and the correspondence of digits and the coordinates, Information Science and high-dimensional space have consanguineous relations. With the transforming from the information issues to the point analysis in high-dimensional space, we proposed a novel computational theory, named High dimensional imagery geometry (HDIG). Some computational algorithms of HDIG have been realized using software, and how to combine with groups of simple operators in some 2D planes to implement the geometrical computations in high-dimensional space is demonstrated in this paper. As the applications, two kinds of experiments of HDIG, which are blurred image restoration and pattern recognition ones, are given, and the results are satisfying.

Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.

Study on the oxygen concentration reduction in heavily Sb-doped silicon

It was determined that oxygen concentration in heavily Sb-doped silicon was about 40% lower than that in the lightly doped Czochralski grown silicon and decreased with increasing content of Sb by means of coincident elastic recoil detection analysis. Through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of SiO, and Sb2O3 evaporation can be neglected. The basic reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when element Sb with larger radius doped degenerately into silicon crystal. (C) 1999 Elsevier Science B.V. All rights reserved.

Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth

When liquid phase epitaxy regrowth at 780 degrees C for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained InGaAs/GaAs quantum well lasers by a factor of 3 to 4 is obtained. We suggest that this improvement is attributed to the reduction of nonradiative centers associated with deep levels at the three regions of the active region, the graded layer and the cladding layer. Indeed, a significant reduction of deep center densities has been observed by using minority and majority carrier injection deep level transient spectroscopy measurements. (C) 1998 Elsevier Science B.V. All rights reserved.

Computational information geometry and its applications

Digitization is the main feature of modern Information Science. Conjoining the digits and the coordinates, the relation between Information Science and high-dimensional space is consanguineous, and the information issues are transformed to the geometry problems in some high-dimensional spaces. From this basic idea, we propose Computational Information Geometry (CIG) to make information analysis and processing. Two kinds of applications of CIG are given, which are blurred image restoration and pattern recognition. Experimental results are satisfying. And in this paper, how to combine with groups of simple operators in some 2D planes to implement the geometrical computations in high-dimensional space is also introduced. Lots of the algorithms have been realized using software.

Modelica建模软件形成的高指标微分代数方程系统指标约简算法研究

随着产品设计的复杂化，应用领域中的数学建模和仿真越来越重要，传统建模方法基于赋值语句，主要考虑单一系统，工程人员需要对程序设计语言和算法求解有相当程度的熟悉，这导致了传统建模方法很难满足复杂产品设计的需要。欧洲仿真界的学者在总结现有建模方法的基础上于1997年推出了一种面向对象的、陈述式的基于方程的语言——Modelica，Modelica语言支持多领域建模，Modelica语言得到了仿真领域众多厂商的支持，成为统一建模领域的事实标准，实现Modelica仿真环境具有重大意义。 编译器是Modelica仿真环境中的核心组件，Modelica编译器会产生高指标DAE系统，除了部分特殊结构的高指标DAE，现有求解器一般不能对通用高指标DAE直接求解，现在一般做法是先对高指标DAE进行指标约简，将其转换成等价的低指标DAE，然后进行求解。这就要求Modelica编译器具有指标约简的功能，以便利用现有求解器进行求解。 本文介绍了几种现有的指标约简算法，给出了各个算法指标约简原理和约简步骤，并对这些算法进行了分析和比较，得出各自的优缺点。最后，本文设计并实现了一个指标约简系统，采用三个Modelica模型产生的方程对系统进行了测试，并验证了实验结果的正确性。

basic research in computer science and software engineering at sklcs

The State Key Laboratory of Computer Science (SKLCS) is committed to basic research in computer science and software engineering. The research topics of the laboratory include: concurrency theory, theory and algorithms for real-time systems, formal specifications based on context-free grammars, semantics of programming languages, model checking, automated reasoning, logic programming, software testing, software process improvement, middleware technology, parallel algorithms and parallel software, computer graphics and human-computer interaction. This paper describes these topics in some detail and summarizes some results obtained in recent years.