Bare wire anodes for electrodynamic tethers

The collection of electrons from the ionosphere is the major problem facing high-power electrodynamic tethers. This article discusses a simple electron-collection concept which is free of most of the physical uncertainties associated with plasma contactors in the rarefied, magnetized environment of an orbiting tether. The idea is to leave exposed a fraction of the tether length near its anodic end, such that, when a positive bias develops locally with respect to the ambient plasma, and for a tether radius small compared with both thermal gyroradius and Debye length, electrons are collected in an orbital-motion-limited regime. It is shown that large currents can be drawn in this way with only moderate voltage drops. The concept is illustrated through a discussion of performance characteristics for generators and thrusters.

Analysis of gain-switching in two-section tapered lasers

We analyze the gain-switching dynamics of two-section tapered lasers by means of a simplified three-rate-equation model. The goal is to improve the understanding of the underlying physics and to optimize the device geometry to achieve high power short duration optical pulses.

Interleaved multi-cell isolated three-phase PWM rectifier system for aircraft applications

Recently there has been an important increase in electric equipment, as well as, electric power demand in aircrafts applications. This prompts to the necessity of efficient, reliable, and low-weight converters, especially rectifiers from 115VAC to 270VDC because these voltages are used in power distribution. In order to obtain a high efficiency, in aircraft application where the derating in semiconductors is high, normally several semiconductors are used in parallel to decrease the conduction losses. However, this is in conflict with high reliability. To match both goals of high efficiency and reliability, this work proposes an interleaved multi-cell rectifier system, employing several converter cells in parallel instead of parallel-connected semiconductors. In this work a 10kW multi-cell isolated rectifier system has been designed where each cell is composed of a buck type rectifier and a full bridge DC-DC converter. The implemented system exhibits 91% of efficiency, high power density (10kW/10kg), low THD (2.5%), and n−1 fault tolerance which complies, with military aircraft standards.

Dual Active Bridge based Battery Charger for Plug-in Hybrid Electric Vehicle with Charging Current Containing Low Frequency Ripple

High power density is strongly preferable for the on-board battery charger of Plug-in Hybrid Electric Vehicle (PHEV). Wide band gap devices, such as Gallium Nitride HEMTs are being explored to push to higher switching frequency and reduce passive component size. In this case, the bulk DC link capacitor of AC-DC Power Factor Correction (PFC) stage, which is usually necessary to store ripple power of two times the line frequency in a DC current charging system, becomes a major barrier on power density. If low frequency ripple is allowed in the battery, the DC link capacitance can be significantly reduced. This paper focuses on the operation of a battery charging system, which is comprised of one Full Bridge (FB) AC-DC stage and one Dual Active Bridge (DAB) DC-DC stage, with charging current containing low frequency ripple at two times line frequency, designated as sinusoidal charging. DAB operation under sinusoidal charging is investigated. Two types of control schemes are proposed and implemented in an experimental prototype. It is proved that closed loop current control is the better. Full system test including both FB AC-DC stage and DAB DC-DC stage verified the concept of sinusoidal charging, which may lead to potentially very high power density battery charger for PHEV.

Bidirectional multiple port dc/dc transformer based on a series resonant converter

In this paper a novel bidirectional multiple port dc/dc transformer topology is presented. The novel concept for dc/dc transformer is based on the Series Resonant Converter (SRC)topology operated at its resonant frequency point. This allows for higher switching frequency to be adopted and enables high efficiency/high power density operation. The feasibility of the proposed concept is verified on a 300W, 700 kHz three port prototype with 390V input voltage and 48V and 12V output voltages. A peak overall efficiency of 93% is measured at full load. A very good load and cross regulation characteristic of the converter is observed in the whole load range, from full load to open circuit. The sensitivity analysis of the resonant capacitance is also performed showing very slight deterioration in the converter performances when a resonant capacitor is changed ±30% of its nominal value.

Analysis and validation of a multiple output series resonant converter

In this paper a novel bidirectional multiple port dc/dc transformer topology is presented. The novel concept for dc/dc transformer is based on the Series Resonant Converter (SRC) topology operated at its resonant frequency point. This allows for higher switching frequency to be adopted and enables high efficiency/high power density operation. The feasibility of the proposed concept is verified on a 300W, 700 kHz three port prototype with 390V input voltage and 48V and 12V output voltages. A peak overall efficiency of 93% is measured at full load. A very good load and cross regulation characteristic of the converter is observed in the whole load range, from full load to open circuit. The sensitivity analysis of the resonant capacitance is also performed showing very slight deterioration in the converter performances when a resonant capacitor is changed ±30% of its nominal value.

Dynamical characterization of monolithic MOPAs emitting at 1.5 μ�m

Eye-safety requirements in important applications like LIDAR or Free Space Optical Communications make specifically interesting the generation of high power, short optical pulses at 1.5 um. Moreover, high repetition rates allow reducing the error and/or the measurement time in applications involving pulsed time-of-flight measurements, as range finders, 3D scanners or traffic velocity controls. The Master Oscillator Power Amplifier (MOPA) architecture is an interesting source for these applications since large changes in output power can be obtained at GHz rates with a relatively small modulation of the current in the Master Oscillator (MO). We have recently demonstrated short optical pulses (100 ps) with high peak power (2.7 W) by gain switching the MO of a monolithically integrated 1.5 um MOPA. Although in an integrated MOPA the laser and the amplifier are ideally independent devices, compound cavity effects due to the residual reflectance at the different interfaces are often observed, leading to modal instabilities such as self-pulsations.

Thermal, stress, and traps effects in AlGaN/GaN HEMTs

GaN y AlN son materiales semiconductores piezoeléctricos del grupo III-V. La heterounión AlGaN/GaN presenta una elevada carga de polarización tanto piezoeléctrica como espontánea en la intercara, lo que genera en su cercanía un 2DEG de grandes concentración y movilidad. Este 2DEG produce una muy alta potencia de salida, que a su vez genera una elevada temperatura de red. Las tensiones de puerta y drenador provocan un stress piezoeléctrico inverso, que puede afectar a la carga de polarización piezoeléctrica y así influir la densidad 2DEG y las características de salida. Por tanto, la física del dispositivo es relevante para todos sus aspectos eléctricos, térmicos y mecánicos. En esta tesis se utiliza el software comercial COMSOL, basado en el método de elementos finitos (FEM), para simular el comportamiento integral electro-térmico, electro-mecánico y electro-térmico-mecánico de los HEMTs de GaN. Las partes de acoplamiento incluyen el modelo de deriva y difusión para el transporte electrónico, la conducción térmica y el efecto piezoeléctrico. Mediante simulaciones y algunas caracterizaciones experimentales de los dispositivos, hemos analizado los efectos térmicos, de deformación y de trampas. Se ha estudiado el impacto de la geometría del dispositivo en su auto-calentamiento mediante simulaciones electro-térmicas y algunas caracterizaciones eléctricas. Entre los resultados más sobresalientes, encontramos que para la misma potencia de salida la distancia entre los contactos de puerta y drenador influye en generación de calor en el canal, y así en su temperatura. El diamante posee une elevada conductividad térmica. Integrando el diamante en el dispositivo se puede dispersar el calor producido y así reducir el auto-calentamiento, al respecto de lo cual se han realizado diversas simulaciones electro-térmicas. Si la integración del diamante es en la parte superior del transistor, los factores determinantes para la capacidad disipadora son el espesor de la capa de diamante, su conductividad térmica y su distancia a la fuente de calor. Este procedimiento de disipación superior también puede reducir el impacto de la barrera térmica de intercara entre la capa adaptadora (buffer) y el substrato. La muy reducida conductividad eléctrica del diamante permite que pueda contactar directamente el metal de puerta (muy cercano a la fuente de calor), lo que resulta muy conveniente para reducir el auto-calentamiento del dispositivo con polarización pulsada. Por otra parte se simuló el dispositivo con diamante depositado en surcos atacados sobre el sustrato como caminos de disipación de calor (disipador posterior). Aquí aparece una competencia de factores que influyen en la capacidad de disipación, a saber, el surco atacado contribuye a aumentar la temperatura del dispositivo debido al pequeño tamaño del disipador, mientras que el diamante disminuiría esa temperatura gracias a su elevada conductividad térmica. Por tanto, se precisan capas de diamante relativamente gruesas para reducer ele efecto de auto-calentamiento. Se comparó la simulación de la deformación local en el borde de la puerta del lado cercano al drenador con estructuras de puerta estándar y con field plate, que podrían ser muy relevantes respecto a fallos mecánicos del dispositivo. Otras simulaciones se enfocaron al efecto de la deformación intrínseca de la capa de diamante en el comportamiento eléctrico del dispositivo. Se han comparado los resultados de las simulaciones de la deformación y las características eléctricas de salida con datos experimentales obtenidos por espectroscopía micro-Raman y medidas eléctricas, respectivamente. Los resultados muestran el stress intrínseco en la capa producido por la distribución no uniforme del 2DEG en el canal y la región de acceso. Además de aumentar la potencia de salida del dispositivo, la deformación intrínseca en la capa de diamante podría mejorar la fiabilidad del dispositivo modulando la deformación local en el borde de la puerta del lado del drenador. Finalmente, también se han simulado en este trabajo los efectos de trampas localizados en la superficie, el buffer y la barrera. Las medidas pulsadas muestran que tanto las puertas largas como las grandes separaciones entre los contactos de puerta y drenador aumentan el cociente entre la corriente pulsada frente a la corriente continua (lag ratio), es decir, disminuir el colapse de corriente (current collapse). Este efecto ha sido explicado mediante las simulaciones de los efectos de trampa de superficie. Por su parte, las referidas a trampas en el buffer se enfocaron en los efectos de atrapamiento dinámico, y su impacto en el auto-calentamiento del dispositivo. Se presenta también un modelo que describe el atrapamiento y liberación de trampas en la barrera: mientras que el atrapamiento se debe a un túnel directo del electrón desde el metal de puerta, el desatrapamiento consiste en la emisión del electrón en la banda de conducción mediante túnel asistido por fonones. El modelo también simula la corriente de puerta, debida a la emisión electrónica dependiente de la temperatura y el campo eléctrico. Además, también se ilustra la corriente de drenador dependiente de la temperatura y el campo eléctrico. ABSTRACT GaN and AlN are group III-V piezoelectric semiconductor materials. The AlGaN/GaN heterojunction presents large piezoelectric and spontaneous polarization charge at the interface, leading to high 2DEG density close to the interface. A high power output would be obtained due to the high 2DEG density and mobility, which leads to elevated lattice temperature. The gate and drain biases induce converse piezoelectric stress that can influence the piezoelectric polarization charge and further influence the 2DEG density and output characteristics. Therefore, the device physics is relevant to all the electrical, thermal, and mechanical aspects. In this dissertation, by using the commercial finite-element-method (FEM) software COMSOL, we achieved the GaN HEMTs simulation with electro-thermal, electro-mechanical, and electro-thermo-mechanical full coupling. The coupling parts include the drift-diffusion model for the electron transport, the thermal conduction, and the piezoelectric effect. By simulations and some experimental characterizations, we have studied the device thermal, stress, and traps effects described in the following. The device geometry impact on the self-heating was studied by electro-thermal simulations and electrical characterizations. Among the obtained interesting results, we found that, for same power output, the distance between the gate and drain contact can influence distribution of the heat generation in the channel and thus influence the channel temperature. Diamond possesses high thermal conductivity. Integrated diamond with the device can spread the generated heat and thus potentially reduce the device self-heating effect. Electro-thermal simulations on this topic were performed. For the diamond integration on top of the device (top-side heat spreading), the determinant factors for the heat spreading ability are the diamond thickness, its thermal conductivity, and its distance to the heat source. The top-side heat spreading can also reduce the impact of thermal boundary resistance between the buffer and the substrate on the device thermal behavior. The very low electrical conductivity of diamond allows that it can directly contact the gate metal (which is very close to the heat source), being quite convenient to reduce the self-heating for the device under pulsed bias. Also, the diamond coated in vias etched in the substrate as heat spreading path (back-side heat spreading) was simulated. A competing mechanism influences the heat spreading ability, i.e., the etched vias would increase the device temperature due to the reduced heat sink while the coated diamond would decrease the device temperature due to its higher thermal conductivity. Therefore, relative thick coated diamond is needed in order to reduce the self-heating effect. The simulated local stress at the gate edge of the drain side for the device with standard and field plate gate structure were compared, which would be relevant to the device mechanical failure. Other stress simulations focused on the intrinsic stress in the diamond capping layer impact on the device electrical behaviors. The simulated stress and electrical output characteristics were compared to experimental data obtained by micro-Raman spectroscopy and electrical characterization, respectively. Results showed that the intrinsic stress in the capping layer caused the non-uniform distribution of 2DEG in the channel and the access region. Besides the enhancement of the device power output, intrinsic stress in the capping layer can potentially improve the device reliability by modulating the local stress at the gate edge of the drain side. Finally, the surface, buffer, and barrier traps effects were simulated in this work. Pulsed measurements showed that long gates and distances between gate and drain contact can increase the gate lag ratio (decrease the current collapse). This was explained by simulations on the surface traps effect. The simulations on buffer traps effects focused on illustrating the dynamic trapping/detrapping in the buffer and the self-heating impact on the device transient drain current. A model was presented to describe the trapping and detrapping in the barrier. The trapping was the electron direct tunneling from the gate metal while the detrapping was the electron emission into the conduction band described by phonon-assisted tunneling. The reverse gate current was simulated based on this model, whose mechanism can be attributed to the temperature and electric field dependent electron emission in the barrier. Furthermore, the mechanism of the device bias via the self-heating and electric field impact on the electron emission and the transient drain current were also illustrated.

Diseño y simulación térmica de HB-LEDs con Autodesk y PCB para ensayos

Este PFC es un trabajo muy práctico, los objetivos fueron impuestos por el tutor, como parte del desarrollo de herramientas (software y hardware) que serán utilizados posteriormente a nivel de docencia e investigación. El PFC tiene dos áreas de trabajo, la principal y primera que se expone es la utilización de una herramienta de simulación térmica para caracterizar dispositivos semiconductores con disipador, la segunda es la expansión de una tarjeta de adquisición de datos con unas PCBs diseñadas, que no estaban disponibles comercialmente. Se ha probado y configurado “Autodesk 2013 Inventor Fusion” y “Autodesk 2013 Simulation and Multiphysics” para simulación térmica de dispositivos de alta potencia. Estas aplicaciones son respectivamente de diseño mecánico y simulación térmica, y la UPM dispone actualmente de licencia. En esta parte del proyecto se realizará un manual de utilización, para que se continúe con esta línea de trabajo en otros PFC. Además se han diseñado mecánicamente y simulado térmicamente diodos LED de alta potencia luminosa (High Brightness Lights Emitting Diodes, HB-LEDs), tanto blancos como del ultravioleta cercano (UVA). Las simulaciones térmicas son de varios tipos de LEDs que actualmente se están empleando y caracterizando térmicamente en Proyectos Fin de Carrera y una Tesis doctoral. En la segunda parte del PFC se diseñan y realizan unas placas de circuito impreso (PCB) cuya función es formar parte de sistemas de instrumentación de adquisición automática de datos basados en LabVIEW. Con esta instrumentación se pueden realizar ensayos de fiabilidad y de otro tipo a dispositivos y sistemas electrónicos. ABSTRACT. The PFC is a very practical work, the objectives were set by the tutor, as part of the development of tools (software and hardware) that will be used later at level of teaching and research. The PFC has two parts, the first one explains the use of a software tool about thermal simulation to characterize devices semiconductors with heatsink, and second one is the expansion of card data acquisition with a PCBs designed, which were not available commercially. It has been tested and configured "Autodesk 2013 Inventor Fusion" and "Autodesk 2013 Simulation Multiphysics” for thermal simulation of high power devices. These applications are respectively of mechanical design and thermal simulation, and the UPM has at present license. In this part of the project a manual of use will be realized, so that it is continued by this line of work in other PFC. Also they have been designed mechanically and simulated thermally LEDs light (High Brightness Lights Emitting Diodes , HB- LEDs) both white and ultraviolet. Thermal simulations are several types of LEDs are now being used in thermally characterizing in Thesis and PhD. In the second part of the PFC there are designed and realized circuit board (PCB) whose function is to be a part of instrumentation systems of automatic acquisition based on LabVIEW data. With this instrumentation can perform reliability testing and other electronic devices and systems.

Fabricación y caracterización de wolframio nanoestructurado como material de primera pared en reactores de fusión nuclear

El trabajo que se llevará a cabo se basa en el desarrollo de nuevos materiales que sean capaces de resistir las condiciones extremas a las que estarían expuestos en el interior de un reactor de fusión nuclear, como son los altos choques térmicos y los altos flujos iónicos. Actualmente se está investigando en el potencial del wolframio nanoestructurado como material de primera pared (en inglés PFM: Plasma Facing Material). La principal ventaja de éste frente al wolframio masivo radica en su gran densidad de fronteras de grano que hacen que el material sea más resistente a la irradiación. El objetivo de este trabajo será la búsqueda de las condiciones óptimas para la fabricación de recubrimientos de wolframio nanoestructurado mediante la técnica de pulverización catódica ("sputtering") en diferentes configuraciones, continuo ("Direct Current Magnetron Sputtering" o DCMS) y/o pulsado ("High Power Impulse Magnetron Sputtering" o HiPIMS) y caracterizar sus propiedades como PFM mediante perfilometría, microscopía óptica, microscopía electrónica de barrido ("Scanning Electron Microscope" o SEM) y difracción de rayos X ("X-Ray Diffraction" o XRD). A su vez, se realizará un ensayo de implantación con un plasma pulsado de He para analizar los efectos de la irradiación en uno de los recubrimientos. Abstract: The work that will be carried out is based on the development of new materials capable of withstanding the extreme conditions that they will have to face inside a nuclear fusion reactor, such as high thermal loads and high ion fluxes. Currently, nanostructured tungsten potential is being investigated as a plasma facing material (PFM). The main advantage over coarse grain tungsten is its high density of grain boundaries which make the material more resistant to irradiation. The project´s main objective will be the search of the optimal conditions that will allow us to fabricate nanostructured tungsten thin films by using the sputtering technique in different configurations, such as DCMS (Direct Current Magnetron Sputtering) and/or HiPIMS (High Power Impulse Magetron Sputtering) and characterize their properties as a PFM by perfilometry, optical microscopy, SEM (Scanning Electron Microcopy) and XRD (X-Ray Diffracion) analysis. Moreover, an implantation test with a He pulsed plasma will be carried out to analyze the effects of irradiation on one of the coatings.