Optical and electronic properties of amorphous diamond

The optical and electronic properties of highly tetrahedral amorphous diamond-like carbon (amorphous diamond, a-D) films were investigated. The structure of the films grown on silicon and glass substrates, under similar deposition conditions using a compact filtered cathodic vacuum arc system, are compared using electron energy loss spectroscopy (EELS). Results from hydrogenation of the films are also reported. The hydrogenated films show two prominent IR absorption peaks centered at 2920 and 2840 cm-1, which are assigned to the stretch mode of the C-H bond in the sp3 configuration on the C-H3 and C-H sites respectively. The high loss EELS spectra show no reduction in the high sp3 content in the hydrogenated films. UV and visible transmission spectra of a-D thin films are also presented. The optical band gap of 2.0-2.2 eV for the a-D films is found to be consistent with the electronic bandgap. The relationship between the intrinsic compressive stress in the films and the refractive index is also presented. The space charge limited current flow is analyzed and coupled with the optical absorption data to give an estimate of 1018 cm-3 eV-1 for the valence band edge density of states.

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

A new idea of power device, which contains highly nitrogen-doped CVD diamond and Schottky contact, is proposed to actualise a power device with diamond. Two-dimensional simulation is conducted using ISE TCAD device simulator. While comparably high current is obtained in a transient simulation as expected, this current does not contribute to the drain-source current because of the symmetry of the device. Using an asymmetric structure or bias conditions, the device has high potential as an electric device for extremely high power, high frequency and high temperature. © 2003 Elsevier Science B.V. All rights reserved.

Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.

Single crystal diamond schottky diodes - Practical design considerations for enhanced device performance

Novel alternatives to the conventional single crystal diamond Schottky metal-intrinsic-p+ (m-i-p+) diode is presented in this work. The conduction mechanism of the device is analysed and structural modifications to enhance its performance are proposed. The periodic inclusion of highly p+ doped thin δ-layers and p+ spots in the intrinsic voltage blocking layer of the diode drastically improves the forward performance of these devices enhancing the forward current of the device by a factor of 10 - 17 with a maximum forward current density of ̃ 40 A/cm 2 for a 2 kV device.

Compact double-side liquid-impingement-cooled integrated power electronic module

This paper presents a compact integrated power electronic module (IPEM) which seeks to overcome the volumetric power density limitations of conventional packaging technologies. A key innovation has been the development of a substrate sandwich structure which permits double side cooling of the embedded dies whilst controlling the mechanical stresses both within the module and at the heat exchanger interface. A 3-phase inverter module has been developed, integrating the sandwich structures with high efficiency impingement coolers, delink capacitance and gate drive units. Full details of the IPEM construction and electrical evaluation are given in the paper. © 2007 IEEE.

Experimental analysis of SCM-based transmission over 500 m of FDDI-grade multimode fiber with enhancement from electronic equalization

Experimental analysis is applied for the first time to identify optimal launch conditions and carrier frequencies for SCM transmission over worst-case MMF. Potential for performance enhancement using electronic equalization is demonstrated for the first time. © 2006 Optical Society of America.

Low-cost PCB-integrated polymer waveguide sensor for gas detection

An optical waveguide sensor formed directly on low-cost PCB substrates is presented for the first time. The device integrates polymer waveguides functionalized with chemical dyes, photonic and electronic components and allows multiple-gas detection. © 2011 OSA.

Optical phase modulation using a hybrid carbon nanotube-liquid-crystal nanophotonic device.

The carbon nanotube-liquid-crystal (CNT-LC) nanophotonic device is a class of device based on the hybrid combination of a sparse array of multiwall carbon nanotube electrodes grown on a silicon surface in a liquid-crystal cell. The multiwall carbon nanotubes act as individual electrode sites that spawn an electric-field profile, dictating the refractive index profile within the liquid crystal and hence creating a series of graded index profiles, which form various optical elements such as a simple microlens array. We present the refractive index and therefore phase modulation capabilities of a CNT-LC nanophotonic device with experimental results as well as computer modeling and potential applications.