158-μJ pulses from a single-transverse-mode, large-mode-area erbium-doped fiber amplifier

We report the amplification of 10-100-pJ semiconductor diode pulses to an energy of 158 μJ and peak powers >100 kW in a multistage fiber amplifier chain based on a single-mode, large-mode-area erbium-doped amplifier design. To our knowledge these results represent the highest single-mode pulse energy extracted from any doped-fiber system. © 1997 Optical Society of America.

A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure

A novel CMOS-compatible, heavily doped drift auxiliary cathode lateral insulated gate transistor (HDD-ACLIGT) structure is analyzed using two-dimensional device simulation techniques. Simulation results indicate that low on-resistance and a fast turn-off time of less than 50 ns can be achieved by incorporating an additional n+ region which is self-aligned to the gate between the p+ auxiliary cathode and the p well, together with an extended p buried layer in an anode-shorted modified lateral insulated gate transistor (MLIGT) structure. The on-state and its transient performance are analyzed in detail. The on-state performances of the HDD-ACLIGT and the MLIGT are compared and discussed. The results indicate that the HDD-ACLIGT structure is well suited for HVICs. The device is also well suited for integration with self-aligned digital CMOS.