Microwave Characterisation of BaCe2Ti5O15 and Ba5Nb4O15 Ceramic Dielectric Resonators Using Whispering Gallery Mode Method

A microwave dielectric ceramic resonator based on BaCe2Ti5O15 and Ba5Nb4O15 have been prepared by conventional solid state ceramic route. The dielectric resonators (DRs) have high dielectric constant 32 and 40 for BaCe2Ti5O15 and Ba5Nb4O15, respectively. The whispering gallery mode (WGM) technique was employed for the accurate determination of the dielectric properties in the microwave frequency range. The BaCe2Ti5O15 and Ba5Nb4O15 have quality factors (Q X F) of 30,600 and 53,000 respectively. The quality factor is found to depend on the azimuthal mode numbers. The temperature coefficient of resonant frequency (Tr) of BaCe2Ti5O15 and Ba5Nb4O15 have been measured accurately using different resonant modes and are + 41 and + 78 ppm/K, respectively

Ba(Tb1/2Nb1/2)03: A New Ceramic Microwave Dielectric Resonator

A new microwave dielectric resonator Ba(Tb1/2Nb1/2)03 has been prepared and characterized in the microwave frequency region. 1 wt% CeO2 is used as additive to reduce the sintering temperature. The sintered samples were characterized by XRD, SEM and Raman spectroscopic methods. Microwave DR properties such as er, Q factor and temperature-coefficient of resonant frequency (Ti) have been measured using a HP 8510 B Network Analyzer. Cylindrical DRs of Ba(Tb1/2Nbi/2)03 showed high Er (~ 37), high Q (~3,200) and low Tf (~10 ppm /°C) at 4 GHz and hence are useful for practical applications

Preparation, Characterization, and Microwave Properties of RETiNbO6 (RE = Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Y, and Yb) Dielectric Ceramics

Microwave ceramic dielectric resonators (DRs) based on RETiNbO6 (RE = Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Y, and Yb) have been prepared using the conventional solid -state ceramic route. The DR samples are characterized using XRD and SEM methods. The microwave dielectric properties are measured using resonant methods and a net work analyzer . The ceramics based on Ce, Pr, Nd, and Sin have dielectric constants in the range 32-54 and positive coefficient of thermal variation of resonant frequency (r,). The ceramics based on Gd, Tb, Dy, Y. and Yb have dielectric constants in the range 19-22 and negative Tf

Synthesis,Characterization and Properties of [REI_xREX]TiNb06 Dielectric Ceramics

Dielectric ceramics based on solid solution phases of [RE1_x= REr]TiNb06, where REI_s = Nd, Pr, Sm and RE' = Dy, Gd and Y, were prepared by the conventional solid-state ceramic route for values of x. The ceramic samples are characterized by X-ray diffraction and microwave methods. Ceramics based on RE (Pr, Nd and Sm) belonging to aeschynite group shows positive value of Tf and those based on RE (Gd, Dy and Y) belonging to euxenite group show negative value of r f. The solid solution phases between the aeschynite and the euxenite group shows intermediate dielectric constant and r f values. The results indicate the possibility of tailoring the dielectric properties by varying the composition of the solid solution phases. The range of solid solubility of euxenite in aeschenite and aeschenite in euxenite are different for different rare earth ions

Microwave dielectric properties of MO -La2O3-TiO2 (M = Ca, Sr, Ba) ceramics

Single-phase polycrystalline ceramics in the MO-La2O3-Ti02 (M = Ca, Sr, Ba) system, such as cation-deficient hexagonal perovskites CaLa4Ti4O15, SrLa4Ti4O15, BaLa4Ti4O15, and Ca2La4Ti5O18 and the orthorhombic phases CaLa4Ti5O17 and CaLa8Ti9O31, were prepared through the solid-state ceramic route. The phases and structure of the ceramics were analyzed through x-ray diffraction and scanning electron microscopy. The microwave dielectric properties of the ceramics were studied using a network analyzer. The investigated ceramics show high Er in the range 42 to 54, high quality factors with Q x f in the range 16,222 to 50,215 GHz, and low Tf in the range -25 to +6 ppm3/°C. These high dielectric constant materials with high Q x f up to 50,215 GHz are suitable for applications where narrow bandwidth and extremely low insertion loss is necessary, especially at frequencies around 1.9 GHz

Microwave Dielectric Properties of RETiTaO6 (RE = La, Ce,Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Yb, Al, and In) Ceramics

Microwave dielectric ceramics based on RETiTaO6 (RE = La, Cc, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Yb, Al, and In) were prepared using a conventional solid-state ceramic route. The structure and microstructure of the samples were analyzed using x-ray diffraction and scanning electron microscopy techniques. The sintered samples were characterized in the microwave frequency region. The ceramics based on Ce, Pr, Nd, Sm, Eu, Gd, Tb, and Dy, which crystallize in orthorhombic aeschynite structure, had a relatively high dielectric constant and positive T f while those based on Ho, Er, and Yb, with orthorhombic euxenite structure, had a low dielectric constant and negative Tf. The RETiTaO6 ceramics had a high-quality factor. The dielectric constant and unit cell volume of the ceramics increased with an increase in ionic radius of the rare-earth ions, but density decreased with it. The value of Tf increased with an increase in RE ionic radii, and a change in the sign of Tf occurred when the ionic radius was between 0.90 and 0.92 A. The results indicated that the boundary of the aeschynite to euxenite morphotropic phase change lay between DyTiTaO6 and HoTiTaO6. Low-loss ceramics like ErTiTaO6 (Er = 20.6, Qxf = 85,500), EuTiTaO6 (Er = 41.3, Qxf = 59,500), and YTiTaO6 (Er = 22.1, Q„xf = 51,400) are potential candidates for dielectric resonator applications

Synthesis, Characterization and Properties of Ca5A2TiO12 (A=Nb, Ta) Ceramic Dielectric Materials for Applications in Microwave Telecommunication Systems

Microwave ceramic dielectric materials Ca5Nb2TiO12 and Ca5Ta2TiO12 have been prepared by a conventional solid-state ceramic process. The structure was studied by X-ray diffraction and the dielectric properties were characterized at microwave frequencies. The ceramics posses a relatively high dielectric constant, very low dielectric loss (Q5 x f > 30000GHz) and small temperature variation of resonant frequency. These materials are potential candidates for dielectric resonator applications in microwave integrated circuits. [DOI: 10. 1 143/JJAP.41.3834]

Microwave dielectric properties of (1-x)CaTi03-xSm(Mg1 /2Ti1/2)03 [0. 1 _

The microwave dielectric properties of (I -x)CaTiO3-xSm(Mg1/2Tit,2)O3(0.1 <-x< 1.0) have been investigated. The system forms a solid solution throughout the entire compositional range. The dielectric constant decreases from 86 to 25 as x varies from 0.1 to 1.0. The Qxf varies non-linearly and increases for composition with x> 0.6. The nonmonotonic variation with composition x is more pronounced in Tt than in er. The microwave dielectric properties indicate the possibility of a phase transformation for x between 0.4 and 0.5

Tailoring the Microwave Dielectric Properties of GdTiNb 1 _-xTa,O6 and Sm 1 _X Y,TiTa06 Ceramics

Microwave dielectric ceramics based on GdTiNb,-,.Ta,O6 and Sml _.,Y,TiTa06 have been prepared by conventional solid state method . The GdTiTaO6 and SmTiTaO6 have aeschenite structure with positive rr and GdTiNbO6 and YTiTaO6 have euxenite structure with negative rr. The rr of the ceramics has been tuned by preparing solid solution phases between the aeschynites and euxenites for a possible zero rr material . It is observed that GdTiNbt_YTa.,O6 undergoes a phase transition from aeschynite to euxenite when x=0.75 and in Sml-,YxTiTa06 for x= 0.73. The microwave dielectric properties change abruptly near the transition region . The rr value approaches zero near the phase transition region while the samples have poor sinterability and poor quality factor . The unloaded quality factor, dielectric constant and the sign of rr of the solid solution phases are found to depend on the average ionic radius of the rare earth ion in RE ,-5RE',TiTaO6. The boundary of the euxenite-aeschynite phase transition occurs at an average ( RE) ionic radius of 0.915 A in Sm,_, Y,.TiTaO6 solid solution phases

Microwave Dielectric Properties of Ba(Mg1/3Ta(2-2x)/3Wx/3Tix/3) 03 Ceramics

microwave dielectric properties of ceramics based on Ba(Mgv3Ta(2-2x)t3W,t3Tixt3)O3 is investigated as a function of x. The 15 densification as well as dielectric properties deteriorate with increase in the substitution levels of (Ti 1,3W113)333 + at (Ta213)3.33+ site 16 in Ba(Mg113Ta213)03. The rt is approaching zero between x = 0.1 and 0.15 in Ba(Mg it3Ta(2-2,,.)t3W,it3Ti,Tt3)O3 where quality factor is 17 reasonably good (Qu x f = 80,000-90,000 GHz). The Ba(Mg1,3Ta(2_,013W,13Ti,,13)03 with x = 1.0 has e, = 15.4, rf= -25.1 ppm/ 18 "C, Q„ x f = 35,400 GHz

The effect of dopants on the microwave dielectric properties of Ba( Mgo.33Ta0.67)03 ceramics

The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1t3Tazt3)O3 (BMT) is investigated. It is found that dopants such as Sb,05, MnO, ZrO,, WO1, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed

Microwave Dielectric Properties of BaO -2CeO2-nTiO2 Ceramics

The BaO-2CeO2-nTiO2 ceramics with n = 3, 4 and 5 have been prepared with CeO2 as starting material . The ceramics have been characterized using scanning electron microscopy , X-ray diffraction , Raman and X-ray photoelectron spectroscopy techniques. The microwave dielectric properties have been measured using standard dielectric resonator techniques . BaO-2CeO2-3TiO2 (123), BaO-2CeO2-4TiO2 ( 124) and BaO-2CeO2-5TiO2 ( 125) ceramics showed dielectric constants of 38, 27 and 32, respectively . All the ceramics showed fairly good unloaded Q - factors . 124 and 125 compounds exhibited low tf values, while 123 showed a high rf value

Preparation, Characterization and Microwave Dielectric Properties of Ba (B1/2Nb1/2)03 [B' = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb and In] Ceramics

Microwave dielectric resonators (DRs) based on Ba(B1,2Nbi/2)03 [B' = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb, and In] complex perovskites have been prepared by conventional solid state ceramic route. The dielectric properties (relative permittivity, Er; quality factor, Q; and resonant frequency, rr) of the ceramics have been measured in the frequency range 4-6 GHz using resonance methods. The resonators have relatively high dielectric constant in the range 36-45, high quality factor and small temperature variation of resonant frequency. The dielectric properties are found to depend on the tolerance factor (t), ionic radius (r), and lattice parameter (ap)

The Effect of Glass Additives on the Microwave Dielectric Properties of Ba(Mg 1 /3Ta2/3)03 Ceramics

The effect of glass additives on the densification , phase evolution, microstructure and microwave dielectric properties of Ba(Mg1;3 Ta2i3)03 (BMT) was investigated . Different weight percentages of quenched glass such as B203 , Si02, B203-SiO2, ZnO-B203, 5ZnO-2B2O3, Al203-SiO2, Na20-2B203.10H20, BaO-B203-SiO2, MgO-B203-SiO2, PbO-B203-SiO2 , ZnO-B203-SiO2 and 2MgO-Al203-5SiO2 were added to calcined BMT precursor . The sintering temperature of the glass -added BMT samples were lowered down to 1300 °C compared to solid-state sintering where the temperature was 1650 °C. The formation of high temperature satellite phases such as Ba5Ta4O15 and Ba7Ta6O22 were found to be suppressed by the glass addition . Addition of glass systems such as B203, ZnO-B203, 5ZnO-2B203 and ZnO-B203-SiO2 improved the densification and microwave dielectric properties. Other glasses were found to react with BMT to form low-Q phases which prevented densification . The microwave dielectric properties of undoped BMT with a densification of 93 . 1 % of the theoretical density were Cr = 24 . 8, Tr = 8 ppm/°C and Q„ x f= 80,000 GHz. The BMT doped with 1.0 wt% of B203 has Q„ x f = 124,700GHz, Cr = 24.2, and T f = -1.3 ppm /°C. The unloaded Q factor of 0.2 wt% ZnO-B203-doped BMT was 136,500 GHz while that of 1.0 wt% of 5ZnO-2B203 added ceramic was Q„ x f= 141,800 GHz . The best microwave quality factor was observed for ZnO -B203-SiO2 (ZBS) glass-added ceramics which can act as a perfect liquid-phase medium for the sintering of BMT. The microwave dielectric properties of 0.2wt% ZBS-added BMT dielectric was Q„ x f= 152,800 GHz, F,= 25.5, and Tr = - 1.5 ppm/°C