Resonant Raman characterisation of ultra-thin nano-protective carbon layers for magnetic storage devices

Carbon thin films are very important as protective coatings for a wide range of applications such as magnetic storage devices. The key parameter of interest is the sp3 fraction, since it controls the mechanical properties of the film. Visible Raman spectroscopy is a very popular technique to determine the carbon bonding. However, the visible Raman spectra mainly depend on the configuration and clustering of the sp2 sites. This can result in the Raman spectra of different samples looking similar albeit having a different structure. Thus, visible Raman alone cannot be used to derive the sp3 content. Here we monitor the carbon bonding by using a combined study of Raman spectra taken at two wavelengths (514 and 244 nm). We show how the G peak dispersion is a very useful parameter to investigate the carbon samples and we endorse it as a production-line characterisation tool. The dispersion is proportional to the degree of disorder, thus making it possible to distinguish between graphitic and diamond-like carbon. © 2003 Elsevier B.V. All rights reserved.

Microgripper using a diamond like carbon/metal bilayer

A novel normally closed microcage has been fabricated and characterized. This device was made from a highly compressively stressed diamond like carbon (DLC) and electroplated Ni bimorph structure. The large stress in the DLC causes the bimorph layer to curve once it is released from the substrate. The radius of curvature is in the range of 18 - 50μm, and can be controlled by varying the DLC and the Ni thicknesses. The devices can be operated in a pulsed mode current with low operation temperature, and can be opened by ∼60μm laterally with a power consumption of only ∼16mW. © 2004 IEEE.

Normally closed microgrippers based on diamond-like carbon/Ni bimorph and diamond-like carbon/metal/polymer trimorph structures

Multi-finger, normally-closed microgrippers made from a bilayer of a metal and diamond-like carbon (DLC) or a trilayer of a polymer, metal and DLC have been analysed, simulated and fabricated. Temperatures of ∼700 K are necessary to open Ni/DLC bimorph structures. Microgrippers made from an SU8/DLC bilayer or SU8/Al/DLC trilayer have also been fabricated, and fully closed microcages with diameters of ∑40 μm have been obtained. Using SU8 reduces the opening temperature of these devices to only ∼400 K.

Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Investigation of critical state in melt processed YBa2Cu3O7-δ thick films

The magnetic moment of square planar melt processed YBa2Cu3O7-δ thick films is observed to scale with the cube of the sample width at 4.2 K, suggesting that current flow on the length scale of the film determines its magnetization at this temperature. A well-defined discontinuity in slope in the scaling data at a sample width corresponding to the average grain size (≈2 mm) implies the coexistence of distinct intra- and inter-grain critical current densities of 1.1 × 105Acm-2 and 0.4 × 105Acm-2 at 1 T and 4.2 K. The presence of a critical state in the films at 4.2T is confirmed by removing the central section from a specimen. The observed change in magnetic moment is in excellent agreement with theory for fields greater than ≈2 T. A critical state is not observed at 77 K which suggests that the grains are only weakly coupled at the higher temperature. © 1994.

Effect of thickness on the magnetic properties of melt-processed YBCO thick films

The magnetic properties of melt-processed YBa2Cu3O7-δ thick films have been measured and correlated with features in the microstructure at 4.2 and 77 K for film thicknesses between 50 and 140 μm. A qualitative model for the volume magnetization of the films at 4.2 K is proposed in terms of the individual contributions from intra H-S grain, inter H-S grain and granular Jc components.

Material properties and tribological performance of rf-PECVD deposited DLC coatings

Diamond-like carbon (DLC) coatings were deposited on to silicon, glass and metal substrates, using an rf-plasma enhanced chemical vapour deposition (rf-PECVD) process. The resultant film properties were evaluated in respect of material and interfacial property control, based on bias voltage variation and the introduction of inert (He and Ar) and reactive (N2) diluting gases in a CH4 plasma. The analysis techniques used to assess the material properties of the films included AFM, EELS, RBS/ERDA, spectroscopic, electrical, stress, microhardness, and adhesion. These were correlated to the tribological performance of the coatings using wear measurements. The most important observation is that He dilution (>90%) promotes enhanced adhesion with respect to all substrate material studies. Coatings typically exhibit a microhardness of the order of 10-20 GPa in films 0.1Diamond-like carbon (DLC) coatings were deposited on to silicon, glass and metal substrates, using an rf-plasma enhanced chemical vapour deposition (rf-PECVD) process. The resultant film properties were evaluated in respect of material and interfacial property control, based on bias voltage variation and the introduction of inert (He and Ar) and reactive (N2) diluting gases in a CH4 plasma. The analysis techniques used to assess the material properties of the films included AFM, EELS, RBS/ERDA, spectroscopic, electrical, stress, microhardness, and adhesion. These were correlated to the tribological performance of the coatings using wear measurements. The most important observation is that He dilution (>90%) promotes enhanced adhesion with respect to all substrate materials studied. Coatings typically exhibit a microhardness of the order of 10-20 GPa in films 0.1 < d < 2 μm thick, with associated electrical resistivity in the range 108 < ρ < 1012 Ω·cm, coefficient of friction <0.1 and surface RMS roughness as low as 2 A. The results are discussed with respect to surface pre-treatment, ion surface bombardment, interfacial reactivity and changes in plasma gas breakdown processes.

Properties of a-C:H films deposited from a methane electron cyclotron wave resonant plasma

An electron cyclotron wave resonant methane plasma discharge was used for the high rate deposition of hydrogenated amorphous carbon (a-C:H). Deposition rates of up to ∼400 Å/min were obtained over substrates up to 2.5 in. in diameter with a film thickness uniformity of ∼±10%. The deposited films were characterised in terms of their mass density, sp3 and hydrogen contents, C-H bonding, intrinsic stress, scratch resistance and friction properties. The deposited films possessed an average sp3 content, mass density and refractive index of ∼58%, 1.76 g/cm3 and 2.035 respectively.Mechanical characterisation indicated that the films possessed very low steady-state coefficients of friction (ca. 0.06) and a moderate shear strength of ∼141 MPa. Nano-indentation measurements also indicated a hardness and elastic modulus of ∼16.1 and 160 GPa respectively. The critical loads required to induce coating failure were also observed to increase with ion energy as a consequence of the increase in degree of ion mixing at the interface. Furthermore, coating failure under scratch test conditions was observed to take place via fracture within the silicon substrate itself, rather than either in the coating or at the film/substrate interface. © 2003 Elsevier B.V. All rights reserved.

Nitrogen incorporation into tetrahedral hydrogenated amorphous carbon

Structural changes induced by the incorporation of nitrogen into ta-C : H films have been studied by Electron Energy Loss Spectroscopy, X-Ray Photoelectron Spectroscopy, Fourier Transformed Infrared Spectroscopy and Ultraviolet-Visible Spectroscopy. ta-C:H films have been synthesised using a low pressure Electron Cyclotron Wave Resonance (ECWR) source which provides a plasma beam with a high degree of ionisation and dissociation. Nitrogen was incorporated by adding N2 to the C2H2 plasma used for the deposition of ta-C : H films. The N/C atomic ratio in the films rises rapidly until the N2/C2H2 gas ratio reaches three, and then increases more gradually, while the deposition rate decreases steeply. Chemical sputtering of the forming films and the formation of molecular nitrogen within the films limit the maximum nitrogen content to about N/C = 0.6. For low nitrogen content the films retain their diamond-like properties, however as N/C atomic ratio increases, a polymeric-like material is formed, with >C=N- structures and terminating C=N and NH groups that decrease the connectivity of the network.

Correlation of transport and magnetic critical currents in melt-processed YBa2Cu3O7-δ thick films

Transport critical current measurements have been carried out on melt-processed thick films of YBa2Cu3O7-δ on yttria-stabilized zirconia in fields of up to 8 T both within grains and across grain boundaries. These measurements yield Jc values of ∼3000 A cm-2 at 4.2 K and zero magnetic field and 400 A cm -2 at 77 K and zero magnetic field, taking the entire sample width as the definitive dimension. Optical and scanning electron microscopy reveals that the thick-film grains consist typically of a central "hub" region ∼50 μm in diameter, which is well connected to radial subgrains or "spokes" which extend ∼1 mm to define the complete grain structure. Attempts have been made to correlate the transport measurements of inter- and intra-hub-and-spoke (H-S) critical current with values of this parameter derived previously from magnetization measurements. Analysis of the transport measurements indicates that current flow through H-S grains is constrained to paths along the spokes via the grain hub. Taking the size of the hub as the definitive dimension yields an intra-H-S grain Jc of ∼60 000 A cm-2 at 4.2 K and 0 T, which is in reasonable agreement with the magnetization data. Experiments in which the hub is removed from individual grains confirm that this feature determines critically the J c of the film.

ZnO films for surface acoustic wave microfluidic devices

SAW devices were fabricated on c-axis oriented ZnO films grown on Si substrates. Effects of film thickness on the film microstructure and acoustic frequencies were studied. Both Rayleigh and Sezawa mode waves were detected on the devices, and their resonant frequencies were found to decrease with increase in film thickness.

ZnO films for surface acoustic wave microfluidic devices

SAW devices were fabricated on c-axis oriented ZnO films grown on Si substrates. Effects of film thickness on the film microstructure and acoustic frequencies were studied. Both Rayleigh and Sezawa mode waves were detected on the devices, and their resonant frequencies were found to decrease with increase in film thickness.