Quark-antiquark correlation in the pion

The electromagnetic tensor for inclusive electron scattering off the pion Wμν for momentum transfers such that q+ = 0, (q+ = q0 + q3) is shown to obey a sum-rule for the component W++. From this sum-rule, one can define the quark-antiquark correlation function in the pion, which characterizes the transverse distance distribution between the quark and antiquark in the light-front pion wave-function. Within the realistic models of the relativistic pion wave function (including instanton vacuum inspired wave function) it is shown that the value of the two-quark correlation radius (rqq̄) is near twice the pion electromagnetic radius (rπ), where rπ ≈ 2/3 fm. We also define the correlation length lcorr where the two-particle correlation have an extremum. The estimation of lcorr ≈ 0.3-0,5 fm is very close to estimations from instanton models of QCD vacuum. It is also shown that the above correlation is very sensitive to the pion light-front wave-function models. © 1997 Elsevier Science B.V.

Interaction of Hawking radiation with static sources outside a Schwarzschild black hole

We show that the response rate of (i) a static source interacting with Hawking radiation of a massless scalar field in Schwarzschild spacetime (with the Unruh vacuum) and that of (ii) a uniformly accelerated source with the same proper acceleration in Minkowski spacetime (with the Minkowski vacuum) are equal. We show that this equality will not hold if the Unruh vacuum is replaced by the Hartle-Hawking vacuum. It is verified that the source responds to the Hawking radiation near the horizon as if it were at rest in a thermal bath in Minkowski spacetime with the same temperature. It is also verified that the response rate in the Hartle-Hawking vacuum approaches that in Minkowski spacetime with the same temperature far away from the black hole. Finally, we compare our results with others in the literature.

Photodesorption and electron trapping in n-type SnO2 thin films grown by dip-coating technique

Thin films of undoped and Sb-doped (2 atg%) SnO2 have been prepared by sol-gel dip-coating technique on borosilicate glasses. Variation of photoconductivity excitation with wavelength and optical absorption indicate indirect bandgap transition with energy of ≅ 3.5 eV. Conductance as function of temperature indicates two levels of capture with 39 and 81 meV as activation energies, which may be related to an Sb donor and oxygen vacancy respectively. Electron trapping by these levels are practically destroyed by UV photoexcitation (305 nm) and heating in vacuum to 200°C. Gas analysis using a mass spectrometer indicates an oxygen related level, which may not be desorbed in the simpler O2 form.