Mixed culture of fishes in seasonal ponds through fertilization and feeding

A study on mixed culture of mirror carp (Cyprinus carpio Lin.), tilapia (Oreochromis niloticus Lin.), silver carp (Hypophthalmicthys molitrix Val.) and Thai sharpunti (Puntius gonionotus Bleeker) in the ratio of 1:2:2:5 was conducted in 12 seasonal mini ponds (30 m² each) for 105 days. There were six treatments each with two replicates and each pond was stocked with a total of 100 fishes. Rice bran and mustard oil cake were used as supplemental feed either in combination or alone in presence or absence of fertilizer. Fertilizers were used in the form of organic, inorganic or both. The best growth performance of mirror carp, tilapia and Thai sharpunti was obtained in treatment III which received both fertilizer (organic+inorganic) and rice bran while the highest growth of silver carp was obtained in treatment VI receiving only inorganic fertilizer. However, the overall best production (2450 Kg/ha) and economic return for the culture period was obtained in treatment VI followed by treatment III. The results are discussed in the light of water quality parameters.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.

A CMOS analogue predistortion circuit for wideband optical fibre links

The laser is a major source of nonlinearity for optical fibre communication systems. In this paper, we propose a CMOS analogue predistortion circuit to reduce laser nonlinearity for wideband optical fibre links. The circuit uses a nonlinearity having the inverse transfer characteristic of the directly modulated vertical cavity surface emitting laser (VCSEL). It is shown by post-layout simulation that the predistortion circuit shows 12dBm improvement in the optical fibre system. The optical fibre transmitter front-end with predistortion lineariser is being fabricated using the austriamicrosystems (AMS) 0.3 5μm CMOS technology.