Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells

Excitonic states in AlxGa1-xN/GaN quantum wells (QWs) are studied within the framework of effective-mass theory. Spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. We witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. For the exciton the binding energies, we found in narrow QWs that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined Stark effect. Exciton and free carrier radiative lifetimes are estimated by simple argumentation. The calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier QWs. (C) 2002 Elsevier Science Ltd. All rights reserved.

Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation

Low-temperature time-resolved photoluminescence (PL) experiments have been performed on a semiconductor planar microcavity, which contains two sets of three In0.13Ga0.87As/GaAs quantum wells embedded in a 3 lambda /2 GaAs cavity. The spontaneous emission dynamics of both lower- and upper-branch polaritons is investigated as a function of exciton-cavity detuning under nonresonant optical excitation. It is found that the PL decay times of both branches are independent of cavity detuning while the PL rising kinetics of the lower- and upper-branch polaritons exhibits a significant difference. The rise time of the upper polarition branch shows a strong dependence on cavity detuning, while the rise time of the lower polarition branch is less sensitive to cavity detuning. Our results can be well understood in the framework of the theoretical prediction of Tassone et al.

Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations

Semiconductor microlasers with an equilateral triangle resonator (ETR) are analyzed by rate equations with the mode lifetimes calculated by the finite-difference time-domain technique and the Pade approximation. A gain spectrum based on the relation of the gain spectrum and the spontaneous emission spectrum is proposed for considering the mode selection in a wide wavelength span. For an ETR microlaser with the side length of about 5 mum, we find that single fundamental mode operation at about 1.55 mum can be obtained as the side length increases from 4.75 to 5.05 mum. The corresponding wavelength tuning range is 93 nm, and the threshold current is about 0.1 to 0.4 mA.

Investigation on anisotropy of vertical-cavity surface-emitting lasers

We have studied the spontaneous emission of polarized excitons in the GaInP/AlGaInP vertical-cavity surface-emitting lasers from 50 K to room temperature. It is observed that the spontaneous emission peak enters and leaves the resonant regime. At the resonant regime, the emission intensities of the perpendicularly and horizontally polarized excitons are enhanced and their proportions are different from that in nonresonant regime. These experimental results are explained by the dressed exciton theory of the semiconductor microcavity device. Based on this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy. (C) 2000 American Institute of Physics. [S0021-8979(00)05315-9].

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers

The influence of lateral propagating modes on the threshold current and the spontaneous emission factor in selectively oxidized vertical cavity surface-emitting lasers (VCSELs) is investigated based on the mode behaviors of lateral propagating modes and the rate equation model. The numerical results show that the lateral propagating modes may be trapped in the aperture region for the selectively oxidized VCSEL with two oxide layers, one above and one below the active region. The output characteristics of VCSELs can be affected due to the reabsorption of the quasitrapped lateral propagating modes. A lower threshold current can be expected for a VCSEL with double oxide layers than that with a single oxide layer. The numerical results of rate equations also show that a larger spontaneous emission factor can be obtained by fitting the output-input curves for the VCSEL with double oxide layers. (C) 1999 American Institute of Physics. [S0021-8979(99)07919-0].

Radiation of dressed excitons in the semiconductor microcavity

In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multiparticle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.

Magnetoexciton polaritons in planar semiconductor microcavities

We study the magnetoexciton polaritons in planar semiconductors microcavities by a quantum approach developed in the strong and weak magnetic-field limits. Ht is shown that the vacuum Rabi splittings with different Landau level indices are close to each other and tend to be proportional to B at sufficiently large values of the magnetic field. Also, we show that the calculated results are in good agreement with the experimental observations. [S0163-1829(99)10215-7].

Metamorphosis of self-organized quantum dots into quantum wires

Spontaneous formation of InAs quantum wires in InAlAs on InP(001) via sequential chain-like coalescence of quantum dots along [1 (1) over bar 0] is realized. Theoretical calculations based on the energetics of interacting steps provide a qualitative explanation for the experimental results. Sequential coalescence of initially isolated dots reduces the total free energy strikingly. Thus the wire-like structure is energetically favorable. (C) 1998 Elsevier Science B.V.

Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

The influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of XPS. Considering the spontaneous polarization at the surfaces and interfaces and the different positions of Fermi levels at the surfaces, we compare the energy band structures of Al/Ga-polar AlN/GaN and N-polar GaN/AlN heterojunctions, and give corrections to the XPS-measured valence band offsets. Other AlN/GaN heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper.

Color center conversion by femtosecond pulse laser irradiation in LiF : F-2 crystals

We report the observation of intense spontaneous emission of green light from LiF:F-2:F-3(+) centers in active channel waveguides generated in lithium fluoride crystals by near-infrared femtosecond laser radiation. While irradiating the crystal at room temperature with 405 nm light from a laser diode, yellow and green emission was seen by the naked eye. Stripe waveguides were fabricated by translating the crystal along the irradiated laser pulse, and their guiding properties and fluorescence spectra at 540 nm demonstrated. This single-step process inducing a waveguide structure offers a good prospect for the development of a waveguide laser in bulk LiF crystals.

染料掺杂聚合物薄膜放大自发发射和受激发射的研究

随着有机／聚合物电致发光材料在有机发光二极管上的应用以及有机晶体管和有机太阳能电池的研制成功，有机／聚合物电致发光材料的优异的光电性能、低廉的生产成本、简单的加工工艺、宽广的选材范围和良好的机械性能等优点极大地吸引科学家们的研究兴趣，并开始了有机／聚合物发光薄膜的放大的自发发射和受激发射行为的研究。有机分子和聚合物的诸多如易得、廉价、结构多样、功能易调节、大的横截面积、高的荧光量子效率和低的自吸收等优点使其制成的激光器在未来光纤通讯领域中呈现了诱人的应用前景。新的有机激光材料不断涌现、器件结构不断推陈出新、新的激发原理不断提出并得到修正已经成为有机／聚合物固体激光研究领域的三大特点。本论文以研究有机材料的激光特性为目的，通过对有机染料DCJTB和三芳胺取代1，8-蔡酰亚胺齐聚物掺杂聚合物薄膜的放大的自发发射和受激发射特性的研究，探讨实现低闭值、高增益光泵浦有机聚合物激光的方法及影响器件性能的因素，阐明放大自发发射的工作机制，为进一步探讨电泵浦有机聚合物激光器提供材料体系和理论依据。1、研究了DCJTB掺杂聚合物薄膜的放大自发发射特性，分析了光泵浦条件下光谱窄化的放大自发发射机制，对ASE增益和损耗进行了讨论和数值拟合，并对增益方程进行了饱和修正。DCJTB：PS薄膜具有较低的闺值（0．16mJ·Pulse~(_1)·cm-2）、高的增益系数（40．72cm-1）、低的损耗值2．49cm一l和高的荧光量子效率（70．4％），其波导增益的波长分布呈明显的洛仑兹分布，增益饱和是均匀展宽的。与DCM比较发现，自由体积是决定材料性能的重要因素，大的自由体积有利于实现低闭值、高增益。我们的研究结果表明，DCJTB是非常好的激光介质材料。2、从ASE的发射波长、ASE闭值、增益和损耗四个技术指标出发，详细研究了激发光波长、聚合物基体、旋涂速度及基片等对DCJTB：PS薄膜放大自发发射（ASE）的影响，短的激发波长和合适的基体材料可以显著地降低闭值和提高增益，薄膜厚度和基片也对ASE性能有很大影响。利用琢lord镜面体系，研究了DCJTB染料掺杂相列向液晶体系的分布反馈激光特性，在电场作用下，可以有效地对TE、TM两种模式的输出强度进行调解。3、把电子传输／发光有机小分子材料Alq3掺杂到DCJTB和C545T掺杂聚合物薄膜，研究了它们的放大自发发射特性。通过在不同激发光波长激发下不同Alq3掺杂浓度对ASE性能影响的研究，发现掺杂Alq3显著地降低了闭值，增加了增益和减小了损耗。由于Alq3是一种良好的半导体有机发光材料，Alq3的引入对电泵浦有机聚合物激光器的研究具有重要的意义。4、研究了三种在4位氨基位置引入不同三芳胺功能基团的红光1，8-蔡酞亚胺齐聚物的放大自发发射特性，研究结果表明，三芳胺取代1，8蔡酞亚胺齐聚物具有低阂值、高增益和低损耗的特点，显示了较小的浓度淬灭效应，即使掺杂浓度高到60％仍可以观察到放大的自发发射现象，表明三芳胺取代1，8茶酞亚胺是一类非常有应用前景的有机半导体激光材料体系。

海南长臂猿(Nomascus hainanus)生境变化与潜在适宜生境研究

海南长臂猿(Nomascus hainanus)是世界上最濒危的灵长类之一，曾经广泛分 布于海南岛的低海拔地区，但现已濒临灭绝；生境变化被认为是它的主要致危因 素之一。为了探讨过去十多年中它们的生境变化原因和变化趋势，并在整个海南 岛内寻找它们的潜在生境，为制订保护计划提供帮助，我们利用遥感和地理信息 系统技术对海南长臂猿的生境状况进行了分析。海南长臂猿的高质量生境是成熟 的山地雨林和沟谷雨林，根据卫星遥感影像的识别能力，我们把成熟林定义为海 南长臂猿的适宜生境，通过对1991 年和2001 年拍摄的Landsat 卫星影像的解译， 我们分析比较了海南岛林地在这十年内的变化情况；通过这两个时期成熟林不同 大小斑块数量与面积的比较，以及成熟林平均斑块面积、斑块密度、斑块之间的 最近距离平均值、最大斑块所占面积等四个破碎化参数的计算，分析了海南长臂 猿高质量生境十年来的生境破碎化趋势；还对不同海拔带的人工林、天然林以及 成熟林的变化情况进行了比较；进而通过海南岛林地变化与社会和经济因素相关 性分析对海南长臂猿生境变化的原因进行了探讨。 结果显示，海南岛的成熟林面积由1991 年的157,927 hm2 减少到2001 年的 107,597 hm2，降低了32％；大小分别为10 hm2、25 hm2、50 hm2、100 hm2、200 hm2 的成熟林斑块的面积和数量都有所下降，并且自然保护区外的下降程度比自 然保护区内严重，省级自然保护区的下降程度比国家级自然保护区的严重。海南 岛现存最大的成熟林斑块位于鹦哥岭省级自然保护区。在这十年中，成熟林破碎 化程度加重，具体表现为平均斑块面积减少、斑块密度增加、斑块之间最近距离 平均值减小、最大斑块所占面积减少。在0-800 m 海拔带上，成熟林的下降比率 达到了36％，在这个海拔带上的人工林面积已远远大于天然林，在800-1400 m 海拔带上，成熟林的下降比率为23％，天然林的面积大于人工林。统计分析显 示当地的农业人口和农业总产值与成熟林的面积呈显著负相关(R =-0.534 P＜ 0.01；R =-0.512 P＜0.01)，同时农业人口与人工林和耕地面积呈显著正相关(R =0.611 P＜0.05；R =0.759, P＜0.05)，这说明成熟林下降与人口增长带来的耕地 扩张以及为了追求经济增长而大量种植人工林密切相关。而海南长臂猿曾经广泛分布在低海拔地区，这一带上大面积的生境丧失使它们的种群在短期内濒临灭 绝。 为了对未来海南长臂猿的生境保护和种群恢复提供帮助，我们利用地理信息 系统Arcgis 软件分析了海南长臂猿2001 年的生境空间分布格局，以成熟林的面 积和距离为指标预测了海南长臂猿的潜在适宜生境。结果显示，至2001 年，海 南岛除了白马岭、南高岭、抱龙、俄贤岭四个地方外，长臂猿的适宜生境多半分 布于自然保护区内；海南长臂猿目前唯一的分布地位于昌江县和白沙县交界的坝 王岭自然保护区，并且只活动于核心区内的一小块地区，此处有两段公路在使用 中，对海南长臂猿的保护不利。 根据上述研究结果，我们建议政府采取措施严格控制海南长臂猿潜在适宜生 境分布地的人口增长，切实执行天然林保护法，并设法恢复低海拔地带的天然植 被。建议在白马岭、南高岭、抱龙、俄贤岭建立四个新的自然保护区，把鹦哥岭 自然保护区从省级提升到国家级。在坝王岭自然保护区的低海拔地带种植本土速 生树种，将海南长臂猿活动区周围的小斑块与大斑块连接到一起，并设法消除该 保护区内两段公路对海南长臂猿的较大负面影响，提高海南长臂猿的生境质量并 扩大其活动范围。同时在自然保护区周边社区大力开展环境保护教育，努力使当 地人可以从生态系统保护中受益。