Amorphous Selenium films using CBD: A Novel Selenisation technique for preparing lndium Selenide and Copper lndium Selenide Thin Films

In the present work, we describe our efforts to develop device quality CuInSe2, films through low cost, simple and eco-friendly hybrid techniques. The most important point to be highlighted here is that the method fully avoids the use of poisonous gases such as H2Se/Se vapour. Instead, selenisation is achieved through solid state reaction between amorphous selenium and polycrystalline metal layers resulting in both binary and ternary selenides. Thin films of amorphous selenium (a-Se) used for this is deposited using Chemical Bath Deposition (CBD). CulnSe2 films are prepared through the selenisation process. Another PV material, indium selenide (In2Se3) thin films are also prepared using this process.

Simple and Encapsulated Transition Metal Complexes of Schiff Bases Derived from Quinoxaline-2-Carboxaldehyde and Diamines: Biological and Catalytic Activity Studies

This thesis is mainly concerned with the synthesis and characterisation of new simple and zeolite encapsulated transition metal (manganese(II),nickel(II),and copper(II)complexes of quinoxaline based double Schiff base ligands.Theses ligands are N,N'-bis(quinoxaline-2-carboxalidene)hydrazine,N,N'-bis(quinoxaline-2-carboxalidene)-1,2-diaminoethane,N,N'-bis(quinoxaline-2-carboxalidene)-1,3-diamonopropane,N,N'-bis(quinoxaline-2-carboxalidene)-1,4-diaminobutane,N,N'-bis(quinoxaline-2-carboxalidene)-1,2-diaminocyclohexane and N,N'-bis(quinoxaline-2-carboxalidene)-1,2-diaminobenzene.The Schiff base ligands have been characterised by spectral and single crystal XRD studies.Theses ligands provide great structural diversity during complexation.Mn(II) and Ni(II) form octahedral with these Schiff bases,whereas Cu(II) forms both octahedral and tetrahedral complexes.Studies on the biological and Catalytic activity of the copper(ll) complexes are also presented in this thesis.

Spray Pyrolysed Tin Chalcogenide Thin Films: Optimization of optoelectronic properties of SnS for possible photovoltaic application as an absorber layer

In the early 19th century, industrial revolution was fuelled mainly by the development of machine based manufacturing and the increased use of coal. Later on, the focal point shifted to oil, thanks to the mass-production technology, ease of transport/storage and also the (less) environmental issues in comparison with the coal!! By the dawn of 21st century, due to the depletion of oil reserves and pollution resulting from heavy usage of oil the demand for clean energy was on the rising edge. This ever growing demand has propelled research on photovoltaics which has emerged successful and is currently being looked up to as the only solace for meeting our present day energy requirements. The proven PV technology on commercial scale is based on silicon but the recent boom in the demand for photovoltaic modules has in turn created a shortage in supply of silicon. Also the technology is still not accessible to common man. This has onset the research and development work on moderately efficient, eco-friendly and low cost photovoltaic devices (solar cells). Thin film photovoltaic modules have made a breakthrough entry in the PV market on these grounds. Thin films have the potential to revolutionize the present cost structure of solar cells by eliminating the use of the expensive silicon wafers that alone accounts for above 50% of total module manufacturing cost.Well developed thin film photovoltaic technologies are based on amorphous silicon, CdTe and CuInSe2. However the cell fabrication process using amorphous silicon requires handling of very toxic gases (like phosphene, silane and borane) and costly technologies for cell fabrication. In the case of other materials too, there are difficulties like maintaining stoichiometry (especially in large area films), alleged environmental hazards and high cost of indium. Hence there is an urgent need for the development of materials that are easy to prepare, eco-friendly and available in abundance. The work presented in this thesis is an attempt towards the development of a cost-effective, eco-friendly material for thin film solar cells using simple economically viable technique. Sn-based window and absorber layers deposited using Chemical Spray Pyrolysis (CSP) technique have been chosen for the purpose

Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases

One of the main challenges in the development of metal-oxide gas sensors is enhancement of selectivity to a particular gas. Currently, two general approaches exist for enhancing the selective properties of sensors. The first one is aimed at preparing a material that is specifically sensitive to one compound and has low or zero cross-sensitivity to other compounds that may be present in the working atmosphere. To do this, the optimal temperature, doping elements, and their concentrations are investigated. Nonetheless, it is usually very difficult to achieve an absolutely selective metal oxide gas sensor in practice. Another approach is based on the preparation of materials for discrimination between several analyte in a mixture. It is impossible to do this by using one sensor signal. Therefore, it is usually done either by modulation of sensor temperature or by using sensor arrays. The present work focus on the characterization of n-type semiconducting metal oxides like Tungsten oxide (WO3), Zinc Oxide (ZnO) and Indium oxide (In2O3) for the gas sensing purpose. For the purpose of gas sensing thick as well as thin films were fabricated. Two different gases, NO2 and H2S gases were selected in order to study the gas sensing behaviour of these metal oxides. To study the problem associated with selectivity the metal oxides were doped with metals and the gas sensing characteristics were investigated. The present thesis is entitled “Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases” and consists of six chapters.

Collective dynamic properties in simple crystals: Influence of the structural disorder

Collective dynamic properties in Lennard-Jones crystals are investigated by molecular dynamics simulation. The study is focused on properties such as the dynamic structure factors, the longitudinal and transverse currents and the density of states. The influence on these properties of the structural disorder is analyzed by comparing the results for one-component crystals with those for liquids and supercooled liquids at analogous conditions. The effects of species-disorder on the collective properties of binary crystals are also discussed.

Chemically Modified Glassy Carbon Electrode as Sensors for Various Pharmaceuticals

Voltammetric methods are applicable for the determination of a wide variety of both organic and inorganic species. Its features are compact equipment, simple sample preparation, short analysis time, high accuracy and sensitivity. Voltammetry is especially suitable for laboratories in which only a few parameters have to be monitored with a moderate sample throughput. Of various electrode materials, glassy carbon electrode is particularly useful because of its high electrical conductivity, impermeability to gases, high chemical resistance, reasonable mechanical and dimensional stability and widest potential range of all carbonaceous electrodes. Electrode modification is a vigorous research area by which the electrochemical determination of various analyte species is facilitated. The scope of pharmaceutical analysis includes the analytical investigation of pure drug, drug formulations, impurities and degradation products of drugs, biological samples containing the drugs and their metabolites with the aim of obtaining data that can contribute to the maximal efficacy and maximal safety of drug therapy. This thesis presents the modification of glassy carbon electrode using metalloporphyrin and dyes and subsequently using these modified electrodes for the determination of various pharmaceuticals. The thesis consists of 9 chapters.

A simple device for the separation of weak larvae of Macrobrachium rosenbergii (De Man)

Larvae of Macrobrachium rosenbergii (De Man) are photopositive (Ling 1969a.b) and negatively rheotactic. While investigating larval diseases of M, rosenbergii it was observed that weak larvae failed to show both these responses. It was felt that this lack of response could be used to develop a device for separating the weak larvae from the apparently healthy ones. Such a device would be a valuable tool for assessing the health of a batch in terms of the percentage of 'healthy' and 'weak' larvae. What follows is a description and mode of operation of the 'photo-flow' device developed by the authors

A simple regulated power supply for characteristics studies of klystron oscillators

A simple and inexpensive power supply suitable for characteristics studies of a klystron is described. The circuit is a modified form of the high voltage adjustable power supply based on LM 317. This provides the necessary cavity and repeller voltages over a wide range, with good regulation. The system is protected aa- ainst short circuits and is ideallv suitable for laboratorv, ex.Deri ments with reflex klystrons.

Simple approach to determine resonant frequencies of microstrip antennas

A simple approach for accurate determination of the resonant frequencies of microstrip antennas of regular geometries is developed and presented. In this approach, a generalised empirical formula for the computation of effective dielectric permittivity is given which takes into account the ratio of the fringing area to the area of the patch. A correction to the equivalent side length of an equilateral triangular patch, previously published, is modified and a new formula is given. A correction to the effective dimensions of an elliptical microstrip antenna is also carried out. Numerical results obtained for the resonant frequencies of elliptical, circular, rectangular and equilateral-triangular microstrip antennas are in good agreement with the available theoretical and experimental results reported by others. The present approach is more efficient, simpler and more accurate

Comments on Simple and Accurate Formula for the Resonant Frequency of the Equilateral Triangular Microstrip Patch Antenna

Antennas and Propagation, IEEE Transactions on,VOL 48,issue 4,pp 636

Bayesian Analysis of Simple Step-stress Model under Weibull Lifetimes

Department of Statistics, Cochin University of Science & Technology, Part of this work has been supported by grants from DST and CSIR, Government of India. 2Department of Mathematics and Statistics, IIT Kanpur

Lithography-free micro- and nanostructuring based on conventional plasma etching

In now-a-days semiconductor and MEMS technologies the photolithography is the working horse for fabrication of functional devices. The conventional way (so called Top-Down approach) of microstructuring starts with photolithography, followed by patterning the structures using etching, especially dry etching. The requirements for smaller and hence faster devices lead to decrease of the feature size to the range of several nanometers. However, the production of devices in this scale range needs photolithography equipment, which must overcome the diffraction limit. Therefore, new photolithography techniques have been recently developed, but they are rather expensive and restricted to plane surfaces. Recently a new route has been presented - so-called Bottom-Up approach - where from a single atom or a molecule it is possible to obtain functional devices. This creates new field - Nanotechnology - where one speaks about structures with dimensions 1 - 100 nm, and which has the possibility to replace the conventional photolithography concerning its integral part - the self-assembly. However, this technique requires additional and special equipment and therefore is not yet widely applicable. This work presents a general scheme for the fabrication of silicon and silicon dioxide structures with lateral dimensions of less than 100 nm that avoids high-resolution photolithography processes. For the self-aligned formation of extremely small openings in silicon dioxide layers at in depth sharpened surface structures, the angle dependent etching rate distribution of silicon dioxide against plasma etching with a fluorocarbon gas (CHF3) was exploited. Subsequent anisotropic plasma etching of the silicon substrate material through the perforated silicon dioxide masking layer results in high aspect ratio trenches of approximately the same lateral dimensions. The latter can be reduced and precisely adjusted between 0 and 200 nm by thermal oxidation of the silicon structures owing to the volume expansion of silicon during the oxidation. On the basis of this a technology for the fabrication of SNOM calibration standards is presented. Additionally so-formed trenches were used as a template for CVD deposition of diamond resulting in high aspect ratio diamond knife. A lithography-free method for production of periodic and nonperiodic surface structures using the angular dependence of the etching rate is also presented. It combines the self-assembly of masking particles with the conventional plasma etching techniques known from microelectromechanical system technology. The method is generally applicable to bulk as well as layered materials. In this work, layers of glass spheres of different diameters were assembled on the sample surface forming a mask against plasma etching. Silicon surface structures with periodicity of 500 nm and feature dimensions of 20 nm were produced in this way. Thermal oxidation of the so structured silicon substrate offers the capability to vary the fill factor of the periodic structure owing to the volume expansion during oxidation but also to define silicon dioxide surface structures by selective plasma etching. Similar structures can be simply obtained by structuring silicon dioxide layers on silicon. The method offers a simple route for bridging the Nano- and Microtechnology and moreover, an uncomplicated way for photonic crystal fabrication.

On the Gap-Complexity of Simple RL-Automata

Analysis by reduction is a method used in linguistics for checking the correctness of sentences of natural languages. This method is modelled by restarting automata. All types of restarting automata considered in the literature up to now accept at least the deterministic context-free languages. Here we introduce and study a new type of restarting automaton, the so-called t-RL-automaton, which is an RL-automaton that is rather restricted in that it has a window of size one only, and that it works under a minimal acceptance condition. On the other hand, it is allowed to perform up to t rewrite (that is, delete) steps per cycle. Here we study the gap-complexity of these automata. The membership problem for a language that is accepted by a t-RL-automaton with a bounded number of gaps can be solved in polynomial time. On the other hand, t-RL-automata with an unbounded number of gaps accept NP-complete languages.