Long-term eddy-covariance measurements from FINO2 platform above the Baltic Sea

The estimation of the carbon dioxide (CO2) fluxes above the open ocean plays an important role for the determination of the global carbon cycle. A frequently used method therefore is the eddy-covariance technique, which is based on the theory of the Prandl-layer with height-constant fluxes in the atmospheric boundary layer. To test the assumption of the constant flux layer, in 2008 measurements of turbulent heat and CO2 fluxes were started within the project Surface Ocean Processes in the Anthropocene (SOPRAN) at the research platform FINO2. The FINO2 platform is situated in the South-west of the Baltic Sea, in the tri-border region between Germany, Denmark, and Sweden. In the frame of the Research project SOPRAN, the platform was equipped with additional sensors in June 2008. A combination of 3-component sonic anemometers (USA-1) and open-path infrared gas analyzers for absolute humidity (H2O) and CO2 (LICOR 7500) were installed at a 9m long boom directed southward of the platform in two heights, at 6.8 and 13.8m above sea surface. Additionally slow temperature and humidity sensors were installed at each height. The gas analyzer systems were calibrated before the installation and worked permanently without any calibration during the first measurement period of one and a half years. The comparison with the measurements of the slow sensors showed for both instruments no significant long-term drift in H2O and CO2. Drifts on smaller time scales (in the order of days) due to the contamination with sea salt, were cleaned naturally by rain. The drift of both quantities had no influence on the fluctuation, which, in contrast to the mean values, are important for the flux estimation. All data were filtered due to spikes, rain, and the influence of the mast. The data set includes the measurements of all sensors as average over 30 minutes each for one and a half years, June 2008 to December 2009, and 10 month from November 2011 to August 2012. Additionally derived quantities for 30 minutes intervals each, like the variances for the fast-sensor variables, as well as the momentum, sensible and latent heat, and CO2 flux are presented.

Space-time Reconstruction of Oceanic Sea States via Variational Stereo Methods

We present a remote sensing observational method for the measurement of the spatio-temporal dynamics of ocean waves. Variational techniques are used to recover a coherent space-time reconstruction of oceanic sea states given stereo video imagery. The stereoscopic reconstruction problem is expressed in a variational optimization framework. There, we design an energy functional whose minimizer is the desired temporal sequence of wave heights. The functional combines photometric observations as well as spatial and temporal regularizers. A nested iterative scheme is devised to numerically solve, via 3-D multigrid methods, the system of partial differential equations resulting from the optimality condition of the energy functional. The output of our method is the coherent, simultaneous estimation of the wave surface height and radiance at multiple snapshots. We demonstrate our algorithm on real data collected off-shore. Statistical and spectral analysis are performed. Comparison with respect to an existing sequential method is analyzed.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

Study of the damage evolution of the concrete under freeze-thaw cycles using traditional and non-traditional techniques

Some experiments have been performed to investigate the cyclic freeze-thaw deterioration of concrete, using traditional and non-traditional techniques. Two concrete mixes, with different pore structure, were tested in order to compare the behavior of a freeze-thaw resistant concrete from one that is not. One of the concretes was air entrained, high content of cement and low w/c ratio, and the other one was a lower cement content and higher w/c ratio, without air-entraining agent. Concrete specimens were studied under cyclic freeze-thaw conditions according to UNE-CENT/TS 12390-9 test, using 3% NaCl solution as freezing medium (CDF test: Capillary Suction, De-icing agent and Freeze-thaw Test). The temperature and relative humidity were measured during the cycles inside the specimens using embedded sensors placed at different heights from the surface in contact with the de-icing agent solution. Strain gauges were used to measure the strain variations at the surface of the specimens. Also, measurements of ultrasonic pulse velocity through the concrete specimens were taken before, during, and after the freeze-thaw cycles. According to the CDF test, the failure of the non-air-entraining agent concrete was observed before 28 freeze-thaw cycles; contrariwise, the scaling of the air-entraining agent concrete was only 0.10 kg/m 2 after 28 cycles, versus 3.23 kg/m 2 in the deteriorated concrete, after 28 cycles. Similar behavior was observed on the strain measurements. The residual strain in the deteriorated concrete after 28 cycles was 1150 m versus 65 m, in the air-entraining agent concrete. By means of monitoring the changes of ultrasonic pulse velocity during the freeze-thaw cycles, the deterioration of the tested specimens were assessed

Dynamic Response of Wind Turbines to Theoretical 3D Seismic Motions Taking into Account the Rotational Component

We study the dynamic response of a wind turbine structure subjected to theoretical seismic motions, taking into account the rotational component of ground shaking. Models are generated for a shallow moderate crustal earthquake in the Madrid Region (Spain). Synthetic translational and rotational time histories are computed using the Discrete Wavenumber Method, assuming a point source and a horizontal layered earth structure. These are used to analyze the dynamic response of a wind turbine, represented by a simple finite element model. Von Mises stress values at different heights of the tower are used to study the dynamical structural response to a set of synthetic ground motion time histories

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells

III-nitride nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitride nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow with high order on pre-defined sites on a pre-patterned substrate

E-beam nanopatterning for the selective area growth of III-V nitride nanorods

GaN/InGaN nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitrides nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow on pre-defined sites on a pre-patterned substrate [5].

Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras

Esta memoria está basada en el crecimiento y caracterización de heteroestructuras Al(Ga)N/GaN y nanocolumnas ordenadas de GaN, y su aplicación en sensores químicos. El método de crecimiento ha sido la epitaxia de haces moleculares asistida por plasma (PAMBE). En el caso de las heteroestructuras Al(Ga)N/GaN, se han crecido barreras de distinto espesor y composición, desde AlN de 5 nm, hasta AlGaN de 35 nm. Además de una caracterización morfológica, estructural y eléctrica básica de las capas, también se han fabricado a partir de ellas dispositivos tipo HEMTs. La caracterización eléctrica de dichos dispositivos (carga y movilidad de en el canal bidimensional) indica que las mejores heteroestructuras son aquellas con un espesor de barrera intermedio (alrededor de 20 nm). Sin embargo, un objetivo importante de esta Tesis ha sido verificar las ventajas que podían tener los sensores basados en heteroestructuras AlN/GaN (frente a los típicos basados en AlGaN/GaN), con espesores de barrera muy finos (alrededor de 5 nm), ya que el canal de conducción que se modula por efecto de cambios químicos está más cerca de la superficie en donde ocurren dichos cambios químicos. De esta manera, se han utilizado los dispositivos tipo HEMTs como sensores químicos de pH (ISFETs), y se ha comprobado la mayor sensibilidad (variación de corriente frente a cambios de pH, Ids/pH) en los sensores basados en AlN/GaN frente a los basados en AlGaN/GaN. La mayor sensibilidad es incluso más patente en aplicaciones en las que no se utiliza un electrodo de referencia. Se han fabricado y caracterizado dispositivos ISFET similares utilizando capas compactas de InN. Estos sensores presentan peor estabilidad que los basados en Al(Ga)N/GaN, aunque la sensibilidad superficial al pH era la misma (Vgs/pH), y su sensibilidad en terminos de corriente de canal (Ids/pH) arroja valores intermedios entre los ISFET basados en AlN/GaN y los valores de los basados en AlGaN/GaN. Para continuar con la comparación entre dispositivos basados en Al(Ga)N/GaN, se fabricaron ISFETs con el área sensible más pequeña (35 x 35 m2), de tamaño similar a los dispositivos destinados a las medidas de actividad celular. Sometiendo los dispositivos a pulsos de voltaje en su área sensible, la respuesta de los dispositivos de AlN presentaron menor ruido que los basados en AlGaN. El ruido en la corriente para dispositivos de AlN, donde el encapsulado no ha sido optimizado, fue tan bajo como 8.9 nA (valor rms), y el ruido equivalente en el potencial superficial 38.7 V. Estos valores son más bajos que los encontrados en los dispositivos típicos para la detección de actividad celular (basados en Si), y del orden de los mejores resultados encontrados en la literatura sobre AlGaN/GaN. Desde el punto de vista de la caracterización electro-química de las superficies de GaN e InN, se ha determinado su punto isoeléctrico. Dicho valor no había sido reportado en la literatura hasta el momento. El valor, determinado por medidas de “streaming potential”, es de 4.4 y 4 respectivamente. Este valor es una importante característica a tener en cuenta en sensores, en inmovilización electrostática o en la litografía coloidal. Esta última técnica se discute en esta memoria, y se aplica en el último bloque de investigación de esta Tesis (i.e. crecimiento ordenado). El último apartado de resultados experimentales de esta Tesis analiza el crecimiento selectivo de nanocolumnas ordenadas de GaN por MBE, utilizando mascaras de Ti con nanoagujeros. Se ha estudiado como los distintos parámetros de crecimiento (i.e. flujos de los elementos Ga y N, temperatura de crecimiento y diseño de la máscara) afectan a la selectividad y a la morfología de las nanocolumnas. Se ha conseguido con éxito el crecimiento selectivo sobre pseudosustratos de GaN con distinta orientación cristalina o polaridad; templates de GaN(0001)/zafiro, GaN(0001)/AlN/Si, GaN(000-1)/Si y GaN(11-20)/zafiro. Se ha verificado experimentalmente la alta calidad cristalina de las nanocolumnas ordenadas, y su mayor estabilidad térmica comparada con las capas compactas del mismo material. Las nanocolumnas ordenadas de nitruros del grupo III tienen una clara aplicación en el campo de la optoelectrónica, principalmente para nanoemisores de luz blanca. Sin embargo, en esta Tesis se proponen como alternativa a la utilización de capas compactas o nanocolumnas auto-ensambladas en sensores. Las nanocolumnas auto-ensambladas de GaN, debido a su alta razón superficie/volumen, son muy prometedoras en el campo de los sensores, pero su amplia dispersión en dimensiones (altura y diámetro) supone un problema para el procesado y funcionamiento de dispositivos reales. En ese aspecto, las nanocolumnas ordenadas son más robustas y homogéneas, manteniendo una alta relación superficie/volumen. Como primer experimento en el ámbito de los sensores, se ha estudiado como se ve afectada la emisión de fotoluminiscencia de las NCs ordenadas al estar expuestas al aire o al vacio. Se observa una fuerte caída en la intensidad de la fotoluminiscencia cuando las nanocolumnas están expuestas al aire (probablemente por la foto-adsorción de oxigeno en la superficie), como ya había sido documentado anteriormente en nanocolumnas auto-ensambladas. Este experimento abre el camino para futuros sensores basados en nanocolumnas ordenadas. Abstract This manuscript deals with the growth and characterization of Al(Ga)N/GaN heterostructures and GaN ordered nanocolumns, and their application in chemical sensors. The growth technique has been the plasma-assisted molecular beam epitaxy (PAMBE). In the case of Al(Ga)N/GaN heterostructures, barriers of different thickness and composition, from AlN (5 nm) to AlGaN (35 nm) have been grown. Besides the basic morphological, structural and electrical characterization of the layers, HEMT devices have been fabricated based on these layers. The best electrical characteristics (larger carriers concentration and mobility in the two dimensional electron gas) are those in AlGaN/GaN heterostructures with a medium thickness (around 20 nm). However, one of the goals of this Thesis has been to verify the advantages that sensors based on AlN/GaN (thickness around 7 nm) have compared to standard AlGaN/GaN, because the conduction channel to be modulated by chemical changes is closer to the sensitive area. In this way, HEMT devices have been used as chemical pH sensors (ISFETs), and the higher sensitivity (conductance change related to pH changes, Ids/pH) of AlN/GaN based sensors has been proved. The higher sensibility is even more obvious in application without reference electrode. Similar ISFETs devices have been fabricated based on InN compact layers. These devices show a poor stability, but its surface sensitivity to pH (Vgs/pH) and its sensibility (Ids/pH) yield values between the corresponding ones of AlN/GaN and AlGaN/GaN heterostructures. In order to a further comparison between Al(Ga)N/GaN based devices, ISFETs with smaller sensitive area (35 x 35 m2), similar to the ones used in cellular activity record, were fabricated and characterized. When the devices are subjected to a voltage pulse through the sensitive area, the response of AlN based devices shows lower noise than the ones based on AlGaN. The noise in the current of such a AlN based device, where the encapsulation has not been optimized, is as low as 8.9 nA (rms value), and the equivalent noise to the surface potential is 38.7 V. These values are lower than the found in typical devices used for cellular activity recording (based on Si), and in the range of the best published results on AlGaN/GaN. From the point of view of the electrochemical characterization of GaN and InN surfaces, their isoelectric point has been experimentally determined. Such a value is the first time reported for GaN and InN surfaces. These values are determined by “streaming potential”, being pH 4.4 and 4, respectively. Isoelectric point value is an important characteristic in sensors, electrostatic immobilization or in colloidal lithography. In particular, colloidal lithography has been optimized in this Thesis for GaN surfaces, and applied in the last part of experimental results (i.e. ordered growth). The last block of this Thesis is focused on the selective area growth of GaN nanocolumns by MBE, using Ti masks decorated with nanoholes. The effect of the different growth parameters (Ga and N fluxes, growth temperature and mask design) is studied, in particular their impact in the selectivity and in the morphology of the nanocolumns. Selective area growth has been successful performed on GaN templates with different orientation or polarity; GaN(0001)/sapphire, GaN(0001)/AlN/Si, GaN(000- 1)/Si and GaN(11-20)/sapphire. Ordered nanocolumns exhibit a high crystal quality, and a higher thermal stability (lower thermal decomposition) than the compact layers of the same material. Ordered nanocolumns based on III nitrides have a clear application in optoelectronics, mainly for white light nanoemitters. However, this Thesis proposes them as an alternative to compact layers and self-assembled nanocolumns in sensor applications. Self-assembled GaN nanocolumns are very appealing for sensor applications, due to their large surface/volume ratio. However, their large dispersion in heights and diameters are a problem in terms of processing and operation of real devices. In this aspect, ordered nanocolumns are more robust and homogeneous, keeping the large surface/volume ratio. As first experimental evidence of their sensor capabilities, ordered nanocolumns have been studied regarding their photoluminiscence on air and vacuum ambient. A big drop in the intensity is observed when the nanocolumns are exposed to air (probably because of the oxygen photo-adsortion), as was already reported in the case of self-assembled nanocolumns. This opens the way to future sensors based on ordered III nitrides nanocolumns.

Bruise Development and Fruit Response of Pear (cv.'Blanquilla') under Impact Conditions

Pear fruits cv. 'Blanquilla', at various ripening stages, were studied under impact conditions. A 50-6-g spherical steel indentator, with a radius of curvature of 0-94 cm, was dropped on to the fruit from three heights: 4, 6 and 10 cm (0-0199, 0-0299 and 0-0499 J). The variables measured were analyzed. All variables were observed to be related to the impact energy except impact duration, which was related to the fruit firmness. Bruising correlated with impact energy when considering different heights, but not with any specific variable when studying the impact phenomenon at individual heights; however, there was a clear correlation between impact bruising and firmness. Three bruise shapes were observed, corresponding to preclimacteric, climacteric and postclimacteric fruits; a theory for this response is offered. According to the results, the impact response in postclimacteric pear fruits (with firmness values of less than 25 N, and a maturity index above 55) may be explained by the role played by the skin rather than by the pulp.

Characterization of a Right Angle Transfer Point in a Fruit Packing Line

Characteristics of the impacts su!ered by the fruit on a transfer point of an experimental fruit packing line were analysed. The transfer is made up by two transporting belts at di!erent heights forming an angle of 903. These transfer points are very common in fruit packing lines, in which fruits receive two impacts: the "rst onto the belt base and the second into the lateral plate. Diferent tests were carried out to study the e!ect of transfer height, velocity, belt structure and padding on the acceleration values recorded by an instrumental sphere (IS 100). Results showed that transfer height and belt structure a!ect mainly impact values on the belt base, and padding a!ects mainly impact values registered for lateral contact. The elect of belt velocity in both impacts is less important when compared to the rest of the variables. Additionally, two powered transfer decelerators were tested at the same point with the aim of decreasing impacts su!ered by the fruit. Comparing impacts registered using these decelerators to those analysed in the first part of the study without decelerators, a high reduction of the impact values was observed.

Mixing effect on volume growth of Fagus sylvatica and Pinus sylvestris is modulated by stand density

Despite the increasing relevance of mixed stands due to their potential benefits; little information is available with regard to the effect of mixtures on yield in forest systems. Hence, it is necessary to study inter-specific relationships, and the resulting yield in mixed stands, which may vary with stand development, site or stand density, etc. In Spain, the province of Navarra is considered one of the biodiversity reservoirs; however, mixed forests occupy only a small area, probably as a consequence of management plans, in which there is an excessive focus on the productivity aspect, favoring the presence of pure stands of the most marketable species. The aim of this paper is to study how growth efficiencies of beech (Fagus sylvatica) and pine (Pinus sylvestris) are modified by the admixture of the other species and to determine whether stand density modifies interspecific relationships and to what extent. Two models were fitted from Spanish National Forest Inventory data, for P. sylvestris and F. sylvatica respectively, which relate the growth efficiency of the species, i.e. the volume increment of the species divided by the species proportion by area, with dominant height, quadratic mean diameter, stocking degree, and the species proportions by area of each species. Growth efficiency of pine increased with the admixture of beech, decreasing this positive effect when stocking degree increased. However, the positive effect of pine admixture on beech growth was greater at higher stocking degrees. Growth efficiency of beech was also dependent on stand dominant height, resulting in a net negative mixing effect when stand dominant heights and stocking degrees were simultaneously low. There is a relatively large range of species proportions and stocking degrees which results in transgressive overyielding: higher volume increments in mixed stands than that of the most productive pure pine stands. We concluded that stocking degree is a key factor in between-species interactions, being the effects of mixing not always greater at higher stand densities, but it depends on species composition.

Space-time Measurements of Oceanic Sea States

Stereo video techniques are effective for estimating the space–time wave dynamics over an area of the ocean. Indeed, a stereo camera view allows retrieval of both spatial and temporal data whose statistical content is richer than that of time series data retrieved from point wave probes. We present an application of the Wave Acquisition Stereo System (WASS) for the analysis of offshore video measurements of gravity waves in the Northern Adriatic Sea and near the southern seashore of the Crimean peninsula, in the Black Sea. We use classical epipolar techniques to reconstruct the sea surface from the stereo pairs sequentially in time, viz. a sequence of spatial snapshots. We also present a variational approach that exploits the entire data image set providing a global space–time imaging of the sea surface, viz. simultaneous reconstruction of several spatial snapshots of the surface in order to guarantee continuity of the sea surface both in space and time. Analysis of the WASS measurements show that the sea surface can be accurately estimated in space and time together, yielding associated directional spectra and wave statistics at a point in time that agrees well with probabilistic models. In particular, WASS stereo imaging is able to capture typical features of the wave surface, especially the crest-to-trough asymmetry due to second order nonlinearities, and the observed shape of large waves are fairly described by theoretical models based on the theory of quasi-determinism (Boccotti, 2000). Further, we investigate space–time extremes of the observed stationary sea states, viz. the largest surface wave heights expected over a given area during the sea state duration. The WASS analysis provides the first experimental proof that a space–time extreme is generally larger than that observed in time via point measurements, in agreement with the predictions based on stochastic theories for global maxima of Gaussian fields.

Relationship between solar radiation on watercore on apple fruit assessed with MRI

This work is a preliminary studio of the possibility of assess a relationship between solar radiation and watercore development on apple fruit, during maturation, using a non destructive method such as Magnetic Resonance Imaging (MRI). For such purpose, several low cost solar radiation sensors were designed for the trial and placed at 2 different heights (1.5 and 2.5 m) on 6 adult ?Esperiega? apple trees, in a commercial orchard in Ademuz (Valencia). Sensors were connected along 27 days, during the end of the growth period and start of the fruit maturation process, and radiation measurements of the a-Si sensors were recorded every 1 minute. At the end of this period, fruits from the upper and the lower part of the canopy of each tree were harvested. In all, 152 apples were collected and images with MRI. A Principal Component Analysis, perfomed over the histograms of the images, as well as segmentation methods were performed on the MR images in order to find a pattern involving solar radiation and watercore incidence.