Fabrication of test structures for 4×4 InP/InGaAsP integrated optical matrix

A novel optical switching matrix measuring 1×2 mm2 in size is fabricated. The switching matrix is composed of waveguides, four 1×4 multimode interference (MMI) splitters, 32 total internal refraction mirrors and four 4×1 MMI combiners with the extremely compact size of 1×2 mm2. This integrated device are assessed and loss contribution measured from test structure is presented.

Sirahu Valai: a passive fishing gear in Ceylon

There are many types of passive fishing gear in use in the estuarine waters and lagoons in Ceylon such as the stake seine net or Kattudel, the tat trap or Jalcottu and the wing net or Sirahu valai. Of these Siraku valai is very popular in the shallow and near shore areas of the sea in north Ceylon. Sirahu valai is popular since it is relatively more economical, less time consuming and more efficient than other forms of fishing gear in shallow waters. More over the fishermen do not have to remain in the fishing grounds while his gear is fishing. Pearson (1923) described this gear as a stake net having a complicated arrangement. Sirahu valai is also referred to as Siraku valai or Kurukku valai.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

Low Molar Mass Organosiloxane Liquid Crystalline Dyes for Dye Guest Host Ferroelectric Display Devices

In low molar mass organosiloxane liquid-crystal materials the siloxane moieties micro-separate and aggregate in planes that could be regarded as an effective or virtual two-dimensional polymer backbone. We show that if a siloxane moiety is attached to a dichroic dye molecule, the micro-segregation of the siloxane moieties makes it possible to include a high concentration of the guest dye (more than 50%) in a host organosiloxane solution. This effect, combined with the temperature independent tilt angles achievable with ferroelectric organosiloxane liquid crystals, provide an ideal material for high-contrast surface-stabilised ferroelectric display devices. We present dyed ferroelectric materials with a temperature independent tilt angle greater than 42 degrees, a wide (room temperature to over 100°C) mesomorphic temperature range and a response time shorter than 500μs in the dye guest host mode.

All-optical routing using a 12×12 passive InP wavelength selective router and tuneable wavelength conversion

All-optical routing of 2.5Gbit/s WDM signals across two cascaded Optical Cross Connects(OXCs) with a penalty of only 0.6dB has been demonstrated using tuneable wavelength converters and a passive WDM router.

LES and hybrid LES/RANS simulations for conjugate heat transfer over a matrix of cubes

Large Eddy Simulation (LES) and a novel k -l based hybrid LES/RANS approach have been applied to simulate a conjugate heat transfer problem involving flow over a matrix of surface mounted cubes. In order to assess the capability and reliability of the newly developed k -l based hybrid LES/RANS, numerical results are compared with new LES and existing RANS results. Comparisons include mean velocity profiles, Reynolds stresses and conjugate heat transfer. As well as for hybrid LES/RANS validation purposes, the LES results are used to gain insights into the complex flow physics and heat transfer mechanisms. Numerical simulations show that the hybrid LES/RANS approach is effective. Mean and instantaneous fluid temperatures adjacent to the cube surface are found to strongly correlate with flow structure. Although the LES captures more mean velocity field complexities, broadly time averaged wake temperature fields are found similar for the LES and hybrid LES/RANS. Copyright © 2005 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.

Growth and characterization of carbon nanotubes for field-emission-display applications

This paper will report on the production, dimensional control, and characterization of arrays of cold-cathode field emitters based on multiwall carbon nanotubes, suitable for use in large-area field-emission-based displays.

Amorphous silicon display backplanes on plastic substrates

Amorphous silicon thin-film transistors and pixel driver circuits for organic light-emitting diode displays have been fabricated on plastic substrates. Pixel circuits demonstrate sufficient current delivery and long-term stable operation. © 2005 IEEE.

Effect of paradoxical sleep deprivation and stress on passive avoidance behavior

Previous studies have shown that several types of stress can induce memory impairment. However, the memory effects of paradoxical sleep deprivation (PSD), a stressor in itself, are unclear. We therefore compared passive avoidance behavior of rats undergoing PSD and PSD stress yoked-control (PSC) using the "reversed flowerpot method." When rats were kept isolated on a PSC platform for 24 It immediately after criterion training, retention trials showed impaired aversive memory storage. When delayed for 24 h after criterion training, PSC stress did not disrupt retention performance. In rats subjected to PSD, either immediately or 24 It after criterion training, there was no disruption of aversive memory consolidation. These results suggest that, during stress, paradoxical sleep plays a role in erasing aversive memory traces, in line with the theory that we "dream in order to forget." (C) 2003 Elsevier Inc. All rights reserved.

Ketamine affects memory consolidation: Differential effects in T-maze and passive avoidance paradigms in mice

The effects of ketamine, an N-methyl-D-aspartate (NMDA) antagonist, on memory in animals have been limited to the sub-anesthetic dose given prior to training in previous studies. We evaluated the effects of post-training anesthetic doses of ketamine to se

Effects of Prenatal Exposure to a 50-Hz Magnetic Field on One-Trial Passive Avoidance Learning in 1-Day-Old Chicks

We investigated memory impairment in newly hatched chicks following in ovo exposure to a 50-Hz magnetic field (MF) of 2 mT (60 min/day) on embryonic days 12-18. Isolated and paired chicks were used to test the effect of stress during training, and memory retention was tested at 10, 30, and 120 min, following exposure to a bitter-tasting bead (100% methylanthranilate). Results showed that memory was intact at 10 min in both isolated and paired chicks with or without MF exposure. However, while isolated chicks had good memory retention levels at 30 and 120 min, those exposed to MF did not. The results suggest a potential disruption of memory formation following in ovo exposure to MF, with this effect only evident in the more stressed, isolated chicks. Bioelectromagnetics 31:150-155, 2010. (C) 2009 Wiley-Liss. Inc.