国際協力ニュース：ミレニアム開発目標、5年後の仕切り直し

貧困削減への取り組みは、しばしば闘いに例えられる。その伝で言えば、2000年に始まったミレニアム開発目標達成への取り組みは世界の貧困削減に向けた15年戦争である。2005年は15年の3分の1の区切りの年なので、この5年間の取り組みの回顧と仕切直しが9月14-16日の国連総会特別首脳会合において行われた。

Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs

The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through the use of a thin (~ 5 nm) GaAsSb(N) capping layer. In the case of GaAsSb-capped QDs, cross-sectional scanning tunnelling microscopy measurements show that the QD height can be controllably tuned through the Sb content up to ~ 14 % Sb. The increased QD height (together with the reduced strain) gives rise to a strong red shift and a large enhancement of the photoluminescence (PL) characteristics. This is due to improved carrier confinement and reduced sensitivity of the excitonic bandgap to QD size fluctuations within the ensemble. Moreover, the PL degradation with temperature is strongly reduced in the presence of Sb. Despite this, emission in the 1.5 !lm region with these structures is only achieved for high Sb contents and a type-II band alignment that degrades the PL. Adding small amounts of N to the GaAsSb capping layer allows to progressively reduce the QD-barrier conduction band offset. This different strategy to red shift the PL allows reaching 1.5 !lm with moderate Sb contents, keeping therefore a type-I alignment. Nevertheless, the PL emission is progressively degraded when the N content in the capping layer is increased

Processing of the JEFF-3.1.2 Cross Section Library into various formats (ACE, PENDF, GENDF, MATXSR and BOXER) for testing purposes

1. Objectives and planning 1.1 Processing JEFF-3.1.2 in ACE format 1.2 Processing JEFF-3.1.2 to JANIS and BOXER format 1.3 Changes in NJOY99.364 1.4 Updates in JEFF-3.1.2 1.5 Processing TENDL-2011