Search for the standard model Higgs boson produced in association with a W or a Z boson and decaying to bottom quarks

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Event activity dependence of (nS) production in=5.02 TeV pPb and=2.76 TeV pp collisions

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Identificação de padrões da dengue em municípios paulistas entre os anos de 2003 a 2011

Pós-graduação em Biociências - FCLAS

Sexualidade na internet: análise de blogs sobre sexualidade e educação sexual

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Observation of a peaking structure in the J/psi phi mass spectrum from B-+/- -> J/psi phi K-+/- decays

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Search for WW gamma and WZ gamma production and constraints on anomalous quartic gauge couplings in pp collisions at root s=8 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Photoelectron multipliers based on avalanche pn - i - pn structures

We present a new physical principle to design an optoelectronic device, which consists of a multilayered semiconductor structure, where the necessary conditions for generation of photoelectrons are met, such that it will enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around the p - n junctions of a reverse biased pn - i - pn structure. The mathematical model and computer simulations of this Semiconductor Photo-electron Multiplier (SPEM) for different semiconductor materials are presented. Its performance is evaluated and compared with that of conventional devices. The Geiger operational mode is briefly discussed which may be used in Silicon Photomultiplier (SiPM) as an elementary photo detector to enhance its performance.