966 resultados para GATE DIELECTRICS


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Heavy or high-specific gravity minerals make up a small but diagnostic component of sediment that is well suited for determining the provenance and distribution of sediment transported through estuarine and coastal systems worldwide. By this means, we see that surficial sand-sized sediment in the San Francisco Bay Coastal System comes primarily from the Sierra Nevada and associated terranes by way of the Sacramento and San Joaquin Rivers and is transported with little dilution through the San Francisco Bay and out the Golden Gate. Heavy minerals document a slight change from the strictly Sierran-Sacramento mineralogy at the confluence of the two rivers to a composition that includes minor amounts of chert and other Franciscan Complex components west of Carquinez Strait. Between Carquinez Strait and the San Francisco Bar, Sierran sediment is intermingled with Franciscan-modified Sierran sediment. The latter continues out the Gate and turns southward towards beaches of the San Francisco Peninsula. The Sierran sediment also fans out from the San Francisco Bar to merge with a Sierran province on the shelf in the Gulf of the Farallones. Beach-sand sized sediment from the Russian River is transported southward to Point Reyes where it spreads out to define a Franciscan sediment province on the shelf, but does not continue southward to contribute to the sediment in the Golden Gate area.

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This paper presents an automatic modulation classifier for electronic warfare applications. It is a pattern recognition modulation classifier based on statistical features of the phase and instantaneous frequency. This classifier runs in a real time operation mode with sampling rates in excess of 1 Gsample/s. The hardware platform for this application is a Field Programmable Gate Array (FPGA). This AMC is subsidiary of a digital channelised receiver also implemented in the same platform.

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—In this paper, application of a new technological solution for power switches based on Gallium Nitride and a filter design methodology for high efficiency Envelope Amplifier in RF transmitters are proposed. Comparing to Si MOSFETs, GaN HEMTs can provide higher efficiency of the Envelope Amplifier, due to better Figure Of Merit (lower product of on- resistance and gate charge). Benefits of their application were verified through the experimental results. The goal of the filter design is to generate the envelope reference with the minimum possible distortion and to improve the efficiency of the Amplifier, obtaining the optimum trade-off between conduction and switching losses.