Trends in development in the prawn fishing technique in India: a review

The paper provides some background information about the developments in the prawn fishing technique. The important indigenous gear for prawns are the filtering type nets like the stake nets, boat seines and beach seines with bag. The only indigenous net, which can be compared in design with the modern bottom trawling gear, is the "Thuri Valai" of the Madras Coast. Prawns have also been reported from the catches of gill nets and cast nets. Dredges and beam trawls are simplest among the dragged gear. Even though several earlier attempts were made with the beam trawl, in 1959 season a detailed experiment was made to study the fishing features of this gear. The subsequent experiments conducted were for comparison with otter trawl, towing of 2 beam trawls one behind the other and the use of tickler chain. The initial experiments with otter trawls were mainly directed towards operational aspects. The experiments were to evaluate the effectiveness of fully mechanised and partially mechanised operation, the effect of extra buoyancy of floats and the use of tickler chain. Subsequent developments had been on the structure and design of prawn trawling gear. Effect of long wings and sweeps were tested. Catches of nylon and cotton nets were compared. The sizes of meshes of the cod-end have also been increased.

A new technique to control insect infestation in Mas min

A process of heat treating Mas min at 125°C for 15 minutes and hermetically packing them up has been investigated. This method has been found to be successful in controlling insect infestation in Mas min. The Japanese method of packing Mas min in BHC coated containers has also been simultaneously examined and found successful under certain conditions. However, this process is found to impart slight undesirable flavors to the product. In addition, this chemical treatment is also likely to be more costly.

Topographical analysis in the SEM using an automatic focusing technique

A novel technique for automated topographical analysis in the SEM has been investigated. It utilizes a 16-bit minicomputer arranged to act as an automatic focusing unit. The computer is coupled to the objective lens of the microscope, by means of a digital to analogue converter, and may regulate the excitation of the lens under program control. Further digital-to-analogue converters allow the computer to act as a programmable scan generator by applying ramp waveforms to the scan amplifiers, permitting the beam to be swept over a small sub-region of the field of interest. The video signal is sampled and applied to an analogue-to-digital converter; the resultant binary numbers are stored in computer memory as an array of values representing relative image intensities within a subregion. A differencing algorithm applied to the collected data allows the level of objective lens excitation to be found at which the sharpness of the image is optimized, and the excitation may be related to the working distance for that subregion through a previous calibration experiment. The sensitivity of the method for detecting small height changes is theoretically of the order of 1 μm.

Application of electron beams in thermal processing of semiconductor materials and devices

Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

HYDROGENATED AMORPHOUS SILICON THIN-FILM DEPOSITION BY DIRECT PHOTO-ENHANCED DECOMPOSITION OF SILANE USING AN INTERNAL HYDROGEN DISCHARGE LAMP.

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Angstrom/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

Fabrication of test structures for 4×4 InP/InGaAsP integrated optical matrix

A novel optical switching matrix measuring 1×2 mm2 in size is fabricated. The switching matrix is composed of waveguides, four 1×4 multimode interference (MMI) splitters, 32 total internal refraction mirrors and four 4×1 MMI combiners with the extremely compact size of 1×2 mm2. This integrated device are assessed and loss contribution measured from test structure is presented.

Technique for wavelength converting a 2.488 Gb/s signal whilst simultaneously monitoring and replacing a wavelength identifying pilot tone

A wavelength conversion device was demonstrated at the bit rate of 2.488 Gb/s with 2R (reamplification and reshaping) regenerative properties. A low frequency pilot tone was removed during the conversion process and a new one added. The wavelength converter is shown to operate well at 10 Gb/s, and tone identification/replacement should also be possible at this data rate.

Spatial emission control of vertical cavity surface emitting lasers to provide bandwidth gain in multimode fibre links using a simple alignment technique

Etched VCSEL sources are reported which avoid bandwidth collapse in multimode fibre using a simple coupling technique to control the launch. These devices have allowed better than over-filled launch bandwidth for alignment tolerances of ±7 microns.