Finite Element Analysis Model of a Contactless Transformer for Battery Chargers in Electric Vehicles

A contactless transformer model is proposed in this paper using Finite Element Analysis (FEA). This model can be used to simulate Inductive Coupling Power Transfer (ICPT) systems with good accuracy of the transformer and reduce the fabrication time of these systems. The model not only takes into account the geometry of the windings but also the frequency effects in them. As the transformer does not have a magnetic core, it is complicated to model because the flux is expanded in the area around the windings. In order to obtain a very accurate model, it is necessary to use a 2D/3D field solver.

Magnetic and electric current morphoiogy in the plasma ejected by a laser-irradiated foil

A quasisteady model for the plasma ablated from a thick foil by a laser pulse, at low $lln $ and R /A i within a low, narrow range, is given (4, is absorbed intensity, /zL wavelength, R focalspot radius). An approximate analytical solution is given for the two-dimensional plasma dynamics. At large magnetic Reynolds number Rm, the morphology of the magnetic field shows features in agreement with recent results for high intensities. Current lines are open: electric current flows toward the spot near its axis, then turns and flows away. The efficiency of converting light energy into electric energy peaks at Rm- 1, both the validity of the model. and accuracy of the solution are discussed, The neighborhood of the spot boundary is analyzed in detail by extending classical Prandtl-Meyer results.

Electrostatic plasma instabilities excited by a high-frequency electric field. AT(30-1)-1238-MATT-669

An analysis of the electrostatic plasma instabilities excited by the application of a strong, uniform, alternating electric field is made on the basis of the Vlasov equation. A very general dispersion relation is obtained and discussed. Under the assumption W 2 O » C 2 pi. (where wO is the applied frequency and wpi the ion plasma frequency) a detailed analysis is given for wavelengths of the order of or large compared with the Debye length. It is found that there are two types of instabilities: resonant (or parametric) and nonresonant. The second is caused by the relative streaming of ions and electrons, generated by the field; it seems to exist only if wO is less than the electron plasma frequency wpe. The instability only appears if the field exceeds a certain threshold, which is found.

Optical behaviour of cholesteric blue phases in electric fields

The optical behaviour of cholesteric mixtures of negative dielectric anisotrony under electric fields is reported. A mixture of S 311~ (31.35 %) + N 5 was employed. AC voltages (f = 1000 Hz) betweeen 0 and 150 volts were applied. Cells 23 micron thick, with internal SnO2 electrodes, were used.

Strategic rigidity and foresight for technology adoption among electric utilities

The variation in the adoption of a technology as a major source of competitive advantage has been attributed to the wide-ranging strategic foresight and the integrative capability of a firm. These possible areas of competitive advantage can exist in the periphery of the firm's strategic vision and can get easily blurred as a result of rigidness and can permeate in the decision-making process of the firm. This article explores how electric utility firms with a renewable energy portfolio can become strategically rigid in terms of adoption of newer technologies. The reluctance or delay in the adoption of new technology can be characterized as strategic rigidness, brought upon as a result of a firm's core competence or core capability in the other, more conventional technology arrangement. This paper explores the implications of such rigidness on the performance of a firm and consequently on the energy eco-system. The paper substantiates the results by emphasizing the case of Iberdrola S.A., an incumbent firm as a wind energy developer and its adoption decision behavior. We illustrate that the very routines that create competitive advantage for firms in the electric utility industry are vulnerable as they might also develop as sources of competitive disadvantage, when firms confront environmental change and uncertainty.

Evaluation of the Magnetic Field Generated by the Inverter of an Electric Vehicle

In hybrid and electric vehicles, passengers sit very close to an electric system of significant power, which means that they may be subjected to high electromagnetic fields. The hazards of long-term exposure to these fields must be taken into account when designing electric vehicles and their components. Among all the electric devices present in the power train, the electronic converter is the most difficult to analyze, given that it works with different frequencies. In this paper, a methodology to evaluate the magnetic field created by a power electronics converter is proposed. After a brief overview of the recommendations of electromagnetic fields exposure, the magnetic field produced by an inverter is analyzed using finite element techniques. The results obtained are compared to laboratory measurements, taken from a real inverter, in order to validate the model. Finally, results are used to draw some conclusions regarding vehicle design criteria and magnetic shielding efficiency.

Dual Active Bridge based Battery Charger for Plug-in Hybrid Electric Vehicle with Charging Current Containing Low Frequency Ripple

High power density is strongly preferable for the on-board battery charger of Plug-in Hybrid Electric Vehicle (PHEV). Wide band gap devices, such as Gallium Nitride HEMTs are being explored to push to higher switching frequency and reduce passive component size. In this case, the bulk DC link capacitor of AC-DC Power Factor Correction (PFC) stage, which is usually necessary to store ripple power of two times the line frequency in a DC current charging system, becomes a major barrier on power density. If low frequency ripple is allowed in the battery, the DC link capacitance can be significantly reduced. This paper focuses on the operation of a battery charging system, which is comprised of one Full Bridge (FB) AC-DC stage and one Dual Active Bridge (DAB) DC-DC stage, with charging current containing low frequency ripple at two times line frequency, designated as sinusoidal charging. DAB operation under sinusoidal charging is investigated. Two types of control schemes are proposed and implemented in an experimental prototype. It is proved that closed loop current control is the better. Full system test including both FB AC-DC stage and DAB DC-DC stage verified the concept of sinusoidal charging, which may lead to potentially very high power density battery charger for PHEV.

Nationwide impact and vehicle to grid application of electric vehicles mobility using an activity based model

This paper describes the impact of electric mobility on the transmission grid in Flanders region (Belgium), using a micro-simulation activity based models. These models are used to provide temporal and spatial estimation of energy and power demanded by electric vehicles (EVs) in different mobility zones. The increment in the load demand due to electric mobility is added to the background load demand in these mobility areas and the effects over the transmission substations are analyzed. From this information, the total storage capacity per zone is evaluated and some strategies for EV aggregator are proposed, allowing the aggregator to fulfill bids on the electricity markets.

Flexible low-cost system to test batteries and ultracapacitors for electric and hybrid vehicles in real working conditions

Batteries and ultracapacitors for hybrid and electric vehicles must satisfy very demanding working conditions that are not usual in other applications. In this sense, specific tests must be performed in order to draw accurate conclusions about their behaviour. To do so, new advanced test benches are needed. These platforms must allow the study of a wide variety of energy storage systems under conditions similar to the real ones. In this paper, a flexible, low-cost and highly customizable system is presented. This system allows batteries and ultracapacitors to be tested in many and varied ways, effectively emulating the working conditions that they face in an electric vehicle. The platform was specifically designed to study energy storage systems for electric and hybrid vehicles, meaning that it is suitable to test different systems in many different working conditions, including real driving cycles. This flexibility is achieved keeping the cost of the platform low, which makes the proposed test bench a feasible alternative for the industry. As an example of the functionality of the platform, a test consisting of a 17-minute ARTEMIS urban cycle with a NiMH battery pack is presented.

Energy Storage Systems for Electric Vehicles: Performance Comparison based on a Simple Equivalent Circuit and Experimental Tests

The decision to select the most suitable type of energy storage system for an electric vehicle is always difficult, since many conditionings must be taken into account. Sometimes, this study can be made by means of complex mathematical models which represent the behavior of a battery, ultracapacitor or some other devices. However, these models are usually too dependent on parameters that are not easily available, which usually results in nonrealistic results. Besides, the more accurate the model, the more specific it needs to be, which becomes an issue when comparing systems of different nature. This paper proposes a practical methodology to compare different energy storage technologies. This is done by means of a linear approach of an equivalent circuit based on laboratory tests. Via these tests, the internal resistance and the self-discharge rate are evaluated, making it possible to compare different energy storage systems regardless their technology. Rather simple testing equipment is sufficient to give a comparative idea of the differences between each system, concerning issues such as efficiency, heating and self-discharge, when operating under a certain scenario. The proposed methodology is applied to four energy storage systems of different nature for the sake of illustration.

Effect of strain and magnetic field on the critical current and electric resistance of the joints between HTS coated conductors

Engineering of devices and systems such as magnets, fault current limiters or cables, based on High Temperature Superconducting wires requires a deep characterization of the possible degradation of their properties by handling at room temperature as well as during the service life thus establishing the limits for building up functional devices and systems. In the present work we report our study regarding the mechanical behavior of spliced joints between commercial HTS coated conductors based on YBCO at room temperature and service temperature, 77 K. Tensile tests under axial stress and the evolution of the critical current and the electric resistance of the joints have been measured. The complete strain contour for the tape and the joint has been obtained by using Digital Image Correlation. Also, tensile tests under external magnetic field have been performed and the effect of the applied field on the critical current and the electric resistance of the joints has been studied. Finally, a preliminary numerical study by means of Finite Element Method (FEM) of the mechanical behavior of the joints between commercial HTS is presented.

Effect of strain and magnetic field on the critical current and electric resistance of the joints between HTS coated conductors

Engineering of devices and systems such as magnets, fault current limiters or cables, based on High Temperature Superconducting wires requires a deep characterization of the possible degradation of their properties by handling at room temperature as well as during the service life thus establishing the limits for building up functional devices and systems. In the present work we report our study regarding the mechanical behavior of spliced joints between commercial HTS coated conductors based on YBCO at room temperature and service temperature, 77 K. Tensile tests under axial stress and the evolution of the critical current and the electric resistance of the joints have been measured. The complete strain contour for the tape and the joints has been obtained by using Digital Image Correlation. Also, tensile tests under external magnetic field have been performed and the effect of the applied field on the critical current and the electric resistance of the joints has been studied. Additionally, fatigue tests under constant cyclic stress and loading-unloading ramps have been carried out in order to evaluate the electromechanical behavior of the joints and the effect of maximum applied stress on the critical current. Finally, a preliminary numerical study by means of the Finite Element Method (FEM) of the electromechanical behavior of the joints between commercial HTS is presented.

Evaluation of the utilization of electric vehicles for building energy management in hotels

Governments are working in new policies to slow down total energy consumption and greenhouse gases (GHG) emissions, promoting the deployment of electric vehicles (EVs) in all countries. In order to facilitate this deployment and help to reduce the final costs of their batteries, additional utilization of EVs when those are parked has been proposed. EVs can be used to minimize the total electricity cost of buildings (named vehicle to building applications, V2B). In this paper an economic evaluation of EVs in the Building Energy Management System is shown. The optimal storage capacity and its equivalent number of EVs are determined. This value is then used for determining the optimal charging schedule to be applied to the batteries. From this schedule, the total expected profit is derived for the case of a real hotel in Spain.

Adapting mode switches into the hierarchical scheduling

Mode switches are used to partition the system’s behavior into different modes to reduce the complexity of large embedded systems. Such systems operate in multiple modes in which each one corresponds to a specific application scenario; these are called Multi-Mode Systems (MMS). A different piece of software is normally executed for each mode. At any given time, the system can be in one of the predefined modes and then be switched to another as a result of a certain condition. A mode switch mechanism (or mode change protocol) is used to shift the system from one mode to another at run-time. In this thesis we have used a hierarchical scheduling framework to implement a multi-mode system called Multi-Mode Hierarchical Scheduling Framework (MMHSF). A two-level Hierarchical Scheduling Framework (HSF) has already been implemented in an open source real-time operating system, FreeRTOS, to support temporal isolation among real-time components. The main contribution of this thesis is the extension of the HSF featuring a multimode feature with an emphasis on making minimal changes in the underlying operating system (FreeRTOS) and its HSF implementation. Our implementation uses fixed-priority preemptive scheduling at both local and global scheduling levels and idling periodic servers. It also now supports different modes of the system which can be switched at run-time. Each subsystem and task exhibit different timing attributes according to mode, and upon a Mode Change Request (MCR) the task-set and timing interfaces of the entire system (including subsystems and tasks) undergo a change. A Mode Change Protocol specifies precisely how the system-mode will be changed. However, an application may not only need to change a mode but also a different mode change protocol semantic. For example, the mode change from normal to shutdown can allow all the tasks to be completed before the mode itself is changed, while changing a mode from normal to emergency may require aborting all tasks instantly. In our work, both the system mode and the mode change protocol can be changed at run-time. We have implemented three different mode change protocols to switch from one mode to another: the Suspend/resume protocol, the Abort protocol, and the Complete protocol. These protocols increase the flexibility of the system, allowing users to select the way they want to switch to a new mode. The implementation of MMHSF is tested and evaluated on an AVR-based 32 bit board EVK1100 with an AVR32UC3A0512 micro-controller. We have tested the behavior of each system mode and for each mode change protocol. We also provide the results for the performance measures of all mode change protocols in the thesis. RESUMEN Los conmutadores de modo son usados para particionar el comportamiento del sistema en diferentes modos, reduciendo así la complejidad de grandes sistemas empotrados. Estos sistemas tienen multiples modos de operación, cada uno de ellos correspondiente a distintos escenarios y para distintas aplicaciones; son llamados Sistemas Multimodales (o en inglés “Multi-Mode Systems” o MMS). Normalmente cada modo ejecuta una parte de código distinto. En un momento dado el sistema, que está en un modo concreto, puede ser cambiado a otro modo distinto como resultado de alguna condicion impuesta previamente. Los mecanismos de cambio de modo (o protocolos de cambio de modo) son usados para mover el sistema de un modo a otro durante el tiempo de ejecución. En este trabajo se ha usado un modelo de sistema operativo para implementar un sistema multimodo llamado MMHSF, siglas en inglés correspondientes a (Multi-Mode Hierarchical Scheduling Framework). Este sistema está basado en el HSF (Hierarchical Scheduling Framework), un modelo de sistema operativo con jerarquía de dos niveles, implementado en un sistema operativo en tiempo real de libre distribución llamado FreeRTOS, capaz de permitir el aislamiento temporal entre componentes. La principal contribución de este trabajo es la ampliación del HSF convirtiendolo en un sistema multimodo realizando los cambios mínimos necesarios sobre el sistema operativo FreeRTOS y la implementación ya existente del HSF. Esta implementación usa un sistema de planificación de prioridad fija para ambos niveles de jerarquía, ocupando el tiempo entre tareas con un “modo reposo”. Además el sistema es capaz de cambiar de un modo a otro en tiempo de ejecución. Cada subsistema y tarea son capaces de tener distintos atributos de tiempo (prioridad, periodo y tiempo de ejecución) en función del modo. Bajo una demanda de cambio de modo (Mode Change Request MCR) se puede variar el set de tareas en ejecución, así como los atributos de los servidores y las tareas. Un protocolo de cambio de modo espeficica precisamente cómo será cambiado el sistema de un modo a otro. Sin embargo una aplicación puede requerir no solo un cambio de modo, sino que lo haga de una forma especifica. Por ejemplo, el cambio de modo de “normal” a “apagado” puede permitir a las tareas en ejecución ser finalizadas antes de que se complete la transición, pero sin embargo el cambio de “normal” a “emergencia” puede requerir abortar todas las tareas instantaneamente. En este trabajo ambas características, tanto el modo como el protocolo de cambio, pueden ser cambiadas en tiempo de ejecución, pero deben ser previamente definidas por el desarrollador. Han sido definidos tres protocolos de cambios: el protocolo “suspender/continuar”, protocolo “abortar” y el protocolo “completar”. Estos protocolos incrementan la flexibilidad del sistema, permitiendo al usuario seleccionar de que forma quieren cambiar hacia el nuevo modo. La implementación del MMHSF ha sido testada y evaluada en una placa AVR EVK1100, con un micro-controlador AVR32UC3A0. Se ha comprobado el comportamiento de los distintos modos para los distintos protocolos, definidos previamente. Como resultado se proporcionan las medidades de rendimiento de los distintos protocolos de cambio de modo.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.