Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

蝙蝠科三种蝙蝠的G-带和C-带

对肺、心等进行组织培养,用空气干燥法制作染色体标本,对贵州3种蝙蝠即中华鼠耳蝠(Myotischinensis)、西南鼠耳蝠(M.altarium)和亚洲长翼蝠(Miniopterus fuliginosus)进行了G-带、C-带带型分析.结果表明,2种鼠耳蝠的G-带基本相同,亚洲长翼蝠的G-带与两种鼠耳蝠有一定同源性;C-带核型中,中华鼠耳蝠和亚洲长翼蝠只有着丝粒带,而西南鼠耳蝠有的染色体有插入C-带和端位C-带.根据带型异同分析讨论了鼠耳蝠和长翼蝠间的进化关系.

云南龙陵黄山羊的核型及C－带和Ag－NOR_s研究

采用外周血淋巴细胞培养及染色体分带技术，分析了龙陵黄山羊的核型，Ｃ—带和银染核仁组织区（Ａｇ—ＮＯＲ＿ｓ），结果表明：龙陵黄山羊染色体数为２ｎ＝６０，常染色体及Ｘ染色体为端部着丝粒染色体，Ｙ染色体最小，为中部着丝粒染色体。常染色体着丝粒区均显示Ｃ—带，性染色体未显Ｃ—带．雌性银染核仁组织区（Ａｇ—ＮＯＲ＿ｓ）分布于Ｎｏ．１，２，３，４，５，２５号染色体，雄性分布于Ｎｏ．１，２，２５号染色体，显示了性别及分布多态性。研究还发现三种不同的联合（ＡＳＳＯＣＩＡＴＩＯＮ）。

云南高黎贡山白颌大角蟾的核型、C-带及Ag-NORs的研究

比较了云南高黎贡山地区的贡山独龙江和腾冲大蒿坪白颌大角蟾（Megophryslateralis）两个地理种群的核型、C-带和Ag-NORs结果表明，两个地理种群在核型和带型上都有差异两个地理种群的核型均为2n＝26，NF＝52染色体形态差异不明显，而次缢痕的位置完全不同，贡山独龙江标本的次缢痕位于No．2的长臂上近着丝点处，腾冲标本的次缢痕位于No．5的短臂上近着丝点的部位在腾冲标本中发现一雄性个体中有一条额外的染色体，可能是B染色体两地标本的C-带差异不太显著，贡山独龙江标本的C-带相对较为显著．贡山独龙江标本的Ag-NORs位于No．2长臂近着丝点处，与次缢痕的部位对应，两条同源染色体上大小有显著差异．腾冲标本的Ag-NORs位于No．5短臂上近着丝点处，与次缢痕的部位对应依据核型和带型的比较，对白颌大角蟾的分类和进化问题进行了讨论。

尼罗罗非鱼染色体的C带、Ag带和减数分裂联会复合体的研究

以Sumner法和界面铺张-硝酸银技术观察, 表明尼罗罗非鱼的2n=44, 核型可分为3组,各具4对亚中着丝粒染色体、17对亚端着丝粒染色体和1对端着丝粒的特大染色体。结构异染色质主要分布于着丝粒附近, 其中Nos.6、8、15亚中着丝粒染色体短臂全部深染。带有银染核仁组织者(Ag-NORs)染色体的数目为2—6条, NORs均位于6、8、15亚中着丝粒染色体短臂。银染色可清楚显示联会复合体(SC)结构和减数分裂行为。SC组型与有丝分裂染色体的组型有较好的一致性 。图版2图2表2参13

中国八种家鼠C-带核型的比较研究

对我国大陆八种家鼠的C-带核型进行了比较研究, 并将C-带差异数量化 进 行模糊聚类分析 结果表明: 八种家鼠的C-带核型相互间存在一定的差异, 通过 分析, 得到了八种家鼠的聚 类分析分支图, 分为二大组: 斯氏家鼠和环齿鼠为 一组 其余种类为另一组。图版1图1表4参23