Contadores eletrônicos no laboratório didático: parte I. Montagem e aplicações

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Espectroscopia de impedância no laboratório de ensino

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrochemical behaviour of heat-treated Al-Zn-Mg alloys in chloride solutions containing sulphate

The electrochemical corrosion and passivation of Al-5Zn-1.7Mg-0.23Cu-0.053Nb alloys, submitted to different heat treatments (cold-rolled, annealed, quenched and aged, and quenched in two steps and aged), in sulphate-containing chloride solutions, has been studied by means of cyclic polarization, electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), and X-ray photoelectron spectroscopy (XPS). The cyclic polarization curves showed that sulphate addition to the chloride solution produced a poor reproducible shift of the breakdown potential to more positive potentials. The repassivation potentials, much more reproducible, and practically separating the passive from the pitting potential region, were slightly displaced in the negative direction with that addition. When the alloys were potentiodynamically polarized in the passive potential region, sulphate was incorporated in the oxide film, thus precluding chloride ingress. In addition, Zn depletion was favoured, whereas Mg losses were avoided. Different equivalent circuits corresponding to different alloys and potentials in the passive and pitting regions were employed to account for the electrochemical processes taking place in each condition. This work shows that sulphate makes these alloys more sensitive to corrosion, increasing the fracture properties of the surface layer and favouring the pitting attack over greater areas than chloride alone. (C) 2002 Elsevier B.V. Ltd. All rights reserved.

Highly corrosion resistant siloxane-polymethyl methacrylate hybrid coatings

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A demarcação platônica de novas fronteiras epistêmicas para o discurso filosófico: um estudo sobre o sofista

No Sofista, mediante os circuitos do procedimento ontológico-binário das divisões dialéticas, Platão busca não somente chegar à verdade das coisas em si, mas, também, a sua correta expressão. A superação das aporias relativas à natureza da linguagem por um tratamento metódico rigoroso, que minimiza suas limitações e inadvertências e a instala numa dimensão transcendente, entre os gêneros do Ser, assegura-lhe o estatuto de discurso filosófico, capaz de dizer aquilo que é como ele é.

Poder local e o funcionamento do comércio vicinal na cidade de São Paulo (1765-1822)

Este texto apresenta algumas hipóteses e idéias sobre o comércio de abastecimento da cidade de São Paulo, entre os anos 1765-1822, através de dados quantitativos e qualitativos levantados em dois conjuntos documentais produzidos pelo Senado da Câmara: Atas e Papéis Avulsos. Este comércio é entendido como um dos circuitos do organismo colonial, conforme proposto por José Roberto do Amaral Lapa. Neste sentido, vem sendo constatado seu funcionamento autônomo, de acordo com os fluxos do mercado interno, as ações dos negociantes-arrematadores de contratos e as reações do Senado da Câmara de São Paulo para enfrentar seus contextos de crise e a radicalização de relações de poder em torno deste circuito mercantil, como fator desencadeador de disputas e hostilidades entre interesses políticos locais, negociantes-arrematadores e autoridades régias.

Comparação de propostas para alocação dos custos de perdas na transmissão

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A tunable triode-MOSFET transconductor and its application to g(m)-C filters

A linear, tunable CMOS transconductance stage is introduced. Drain voltage of the input transistor operating in triode region is settled by a regulation loop and a first-order linear relationship between g(m) and a de bias voltage is achieved. In addition to easy tuning, this technique offers circuit simplicity, wide dynamic range, high input and output impedances and low consumption. The transconductor is presented on both single-ended and fully-differential versions. A 3rd-order elliptical low-pass g(m)-C filter with a nominal roll-off frequency of 2MHz is used as one example for the many applications of the proposed transconductor. SPICE data describe circuits performances and filter tunabilily Passband is tuned at a rate of 2.36KHz/mV and good linearity is indicated by a 0.89% THD for an 800mV(p-p) balanced-driven input.

Settling analysis of MOS regulated current mirrors applied to micropower D/A converters

This paper provides an insight to the trade-off between settling time and power consumption in regulated current mirrors as building parts in micropower current-switching D/A converters. The regulation-loop frequency characteristic is obtained and difficulties to impose a dominant-pole condition to the resulting 2nd-order system are evaluated. Raising pole frequencies in micropower circuits, while meeting consumption requirements, is basically limited by parasitic capacitances. For such cases, an alternative is to impose a twin-pole condition in which design constraints are somewhat relieved and settling slightly improved. Relationships between pole frequencies, transistor geometry and bias are established and design guidelines for regulated current mirrors founded. By placing loop-transistors in either weak or strong inversion, small (W/L) ratios are allowed and stray capacitances reduced. Simulated waveforms suggest a good agreement with theory. The proposed approach applied to the design of a micropower current-mode D/A converter improves both simulated and experimental settling performance.

A low-voltage low-power analog memory cell with built-in 4-quadrant multiplication

An accurate switched-current (SI) memory cell and suitable for low-voltage low-power (LVLP) applications is proposed. Information is memorized as the gate-voltage of the input transistor, in a tunable gain-boosting triode-transconductor. Additionally, four-quadrant multiplication between the input voltage to the transconductor regulation-amplifier (X-operand) and the stored voltage (Y-operand) is provided. A simplified 2 x 2-memory array was prototyped according to a standard 0.8 mum n-well CMOS process and 1.8-V supply. Measured current-reproduction error is less than 0.26% for 0.25 muA less than or equal to I-SAMPLE less than or equal to 0.75 muA. Standby consumption is 6.75 muW per cell @I-SAMPLE = 0.75 muA. At room temperature, leakage-rate is 1.56 nA/ms. Four-quadrant multiplier (4QM) full-scale operands are 2x(max) = 320 mV(pp) and 2y(max). = 448 mV(pp), yielding a maximum output swing of 0.9 muA(pp). 4QM worst-case nonlinearity is 7.9%.

A low-voltage wide-swing programmable-gain current amplifier

A CMOS low-voltage, wide-swing continuous-time current amplifier is presented. Exhibiting an open-loop architecture, the circuit is composed of transresistance and transconductance stages built upon triode-operating transistors. In addition to an extended dynamic range, the current gain can be programmed within good accuracy by a rapport involving only transistor geometries and tuning biases. Low temperature-drift on gain setting is then expected.In accordance with a 0.35 mum n-well CMOS fabrication process and a single 1.1 V-supply, a balanced current-amplifier is designed for a programmable gain-range of 6 - 34 dB and optimized with respect to dynamic range. Simulated results from PSPICE and Bsim3v3 models indicate, for a 100 muA(pp)-output current, a THD of 0.96 and 1.87% at 1 KHz and 100 KHz, respectively. Input noise is 120 pArootHz @ 10 Hz, with S/N = 63.2 dB @ 1%-THD. At maximum gain, total quiescent consumption is 334 muW. Measurements from a prototyped amplifier reveal a gain-interval of 4.8-33.1 dB and a maximum current swing of 120 muA(pp). The current-amplifier bandwidth is above 1 MHz.

Methodology for load compensation in four-wire electrical power systems based on instantaneous sampling

This work describes a methodology for power factor control and correction of the unbalanced currents in four-wire electric circuits. The methodology is based on the insertion of two compensation networks, one wye-grounded neutral and other in delta, in parallel to the load. The mathematical development has been proposed in previous work [3]. In this paper, however, the determination of the compensation susceptances is based on the instantaneous values of load currents. The results are obtained using the MatLab-Simulink enviroment

Effect of the addition of ZnO seeds on the electrical proprieties of ZnO-based varistors

ZnO has the characteristic of presenting an intermediate value for the effective 3 eV barrier at room temperature. ZnO ceramics are applied in high-voltage systems or circuits. Attempts were made to reduce the number of effective barriers in the system by adding large particles of ZnO to the varistor composition. This procedure reduced the breakdown field of the varistors by values up to 90% lower than those initially obtained, and produced nonlinear coefficients as low as 20. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Electrochemical studies with a Cu-5wt.%Ni alloy in 0.5 M H2SO4

The electrochemical behavior of the annealed Cu-5wt.%Ni alloy in 0.5 M H2SO4 was studied by means of open-circuit potential (E-OCP) measurements, cyclic voltammetry, electrochemical impedance spectroscopy (EIS), and quasi-stationary linear potential sweep. The hydrodynamics of the system was also studied. This material is constituted by a single a, phase. The anodic behavior of a Cu-Ni alloy in H2SO4 consists fundamentally on the electrodissolution of Cu, its main component, and the formation of a sulfur-containing passive layer. The presence of Ni decreases the rate of Cu oxidation, mostly at high positive potentials. The impedance spectra, obtained for the unrotating electrode, can be interpreted in terms of a simple charge-transfer reaction across a surface layer. When the electrode is rotated, the occurrence of an inductive loop evidenced the existence of an adsorbed layer. All the resistance estimated from the proposed equivalent circuits diminished with the electrode rotation rate, emphasizing the influence of ion transport in the overall electrode process. The system presented two anodic Tafel slopes: 40 mV dec(-1) for E < 255 mV and 67 mV dec(-1) for E > 275 mV. A Tafel slope of 40 mV dec(-1) evidences that copper dissolution can be interpreted in terms of the mechanism proposed by Mattsson and Bockris. The second Tafel suggests that at potentials more positive than 275 mV, copper dissolves according to a mechanism that considers the disproportionation of adsorbed Cu(1) species. (C) 2003 Elsevier Ltd. All rights reserved.

Applying a new methodology to verify transmission line model performance - the equivalent impedance test

The objective of this paper is to present a methodology to analyze a transmission line model used in electromagnetic transitory simulators, called equivalent impedance test. Initially the definition of equivalent impedance reference test is shown. Soon after this methodology is applied to a transmission line model, the Quasi-Modes model. The studies were accomplished in a hypothetical non-transposed three-phase transmission fine of 440 kV. The line length is 500 km, and it was modeled through cascades of pi-circuits (with 50 pi's circuits, each with 10 km length).