PLANKTON AND SESTON STRUCTURE IN A SHALLOW, EUTROPHIC SUBTROPICAL CHINESE LAKE

The seasonal dynamics in the nutrient concentrations, chlorophyll-a amount (Chl-a), total algal volume (CV), Chl-a/CV ratio, seston structure were studied at two sampling stations in a shallow, highly eutrophicated subtropic lake (the Guozheng Hu area of the East Lake) on the plain of the middle basin of the Chang Jiang (the Yangtze River) of China. The lake ecosystem of the Guozheng Hu area is dominated by two planktivorous fishes (silver carp and bighead carp), phytoplankton and zooplankton. Macrophytes are extremely scarce in this area. Concentrations of the total dissolved nitrogen and phosphorus in the Guozheng Hu area in 1990 were very high. Fish yield, of which, more than 90 % was composed of silver carp and bighead carp in the Guozheng Hu area was very high (ca. 1140 kg/ha or 45.6 g/m3 in 1990). Grazing pressure by the fishes on the plankton community is considered to be rather strong. The annual average biomass of zooplankton was ca. 1/3 - 1/2 that of phytoplankton. On the average, dry matter in the living plankton only constituted ca. 3-7 % of the total dry seston, and plankton carbon only constituted ca. 5 - 10 % of the seston carbon. The present results indicate that, in the Guozheng Hu area of the East Lake, of the organic part of the seston, detritus is quantitatively an important constituent, while living plankton is only a very small component.

A new year message from Chinese Science Bulletin

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Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.