A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures

The interband and intraband photocurrent properties of InAs/InAlAs/InP nanostructures have been studied. The doping effect on the photoluminescence properties of the quantum dots and the anisotropy of the quantum wire interband photocurrent properties are presented and discussed. With the help of interband excitation, an intraband photocurrent signal of the InAs nanostructures is observed. With the increase of the interband excitation power, the intraband photocurrent signal first increases and then decreases, which can be explained by the variance of the ground state occupation of the InAs nanostructures and the change of the mobility and lifetime of the electrons. The temperature dependence of the intraband photocurrent signal of the InAs nanostructures is also investigated.

Spectral properties of a double-quantum-dot structure: A causal Green's function approach

Spectral properties of a double quantum dot (QD) structure are studied by a causal Green's function (GF) approach. The double QD system is modeled by an Anderson-type Hamiltonian in which both the intra- and interdot Coulomb interactions are taken into account. The GF's are derived by an equation-of-motion method and the real-space renormalization-group technique. The numerical results show that the average occupation number of electrons in the QD exhibits staircase features and the local density of states depends appreciably on the electron occupation of the dot.

Structure and magnetic properties of new compounds CdYFeWO7

The solid solutions of CdYFeWO7, which are cubic pyrochlores of the type A(2)B(2)O(7), have been prepared and their structures were determined using Ab initio method. Rietveld refinement of the powder XRD data showed that CdYFeWO7 adopted cubic (Fd-3m) structure, while oxides crystallized in a defect-pyrochlore structure where both O (48f) and O'(8b) sites were partially occupied, and the frustrated cations sublattice precluded long range ordering of Fe/W in the pyrochlore structure. Charge distribution analysis also suggested incomplete occupation of different oxygen sites, thus the compound was non-stoichiometric, with the formula CdYFeW0.982O6.94, Magnetic measurements were carried out to find that Fe ions were in the high spin trivalent state. Curie Weiss paramagnetism down to similar to 5 K and the characteristic superposition between FC and ZFC suggested spin liquid rather than spin glass state.

Trends in elasticity and electronic structure of 5d transition metal diborides: first-principles calculations

We investigate the cohesive energy, heat of formation, elastic constant and electronic band structure of transition metal diborides TMB2 (TM = Hf, Ta, W, Re, Os and Ir, Pt) in the Pmmn space group using the ab initio pseudopotential total energy method. Our calculations indicate that there is a relationship between elastic constant and valence electron concentration (VEC): the bulk modulus and shear modulus achieve their maximum when the VEC is in the range of 6.8-7.2. In addition, trends in the elastic constant are well explained in terms of electronic band structure analysis, e.g., occupation of valence electrons in states near the Fermi level, which determines the cohesive energy and elastic properties. The maximum in bulk modulus and shear modulus is attributed to the nearly complete filling of TM d-B p bonding states without filling the antibonding states. On the basis of the observed relationship, we predict that alloying W and Re in the orthorhombic structure OsB2 might be harder than alloying the Ir element. Indeed, the further calculations confirmed this expectation.

Evolution of freshwater plumes and salinity fronts in the northern Bay of Bengal

[1] The evolution of freshwater plumes and the associated salinity fronts in the northern Bay of Bengal ( henceforth the bay) is studied using rotated empirical orthogonal function (REOF) analysis and extended associate pattern analysis (EAPA). The results show that sea surface salinity distribution is featured by eastern-bay and western-bay plumes in the northern bay during different seasons. The western-bay plume begins in early July, peaks in late August, and then turns into a bay-shaped plume with the two plumes in either side of the bay, which peaks in late October. The southward extension of the western-bay plume can be explained by the southwestward geostrophic flow associated with the cyclonic gyre in the northern bay, which counters the northeastward Ekman drift driven by wind stress. The offshore expansion of the western-bay plume is induced by the offshore Ekman drift which also produces a salinity front near the east coast of India. The bay-shaped plume appears when the cyclonic gyre shifts westward and a weak anticyclonic gyre occupies the northeastern bay. As the season advances, the western part of the bay-shaped plume decays while the eastern part persists until the following June, which is believed to be associated with the anticyclonic gyre in the northern bay. The evolution of the plumes except the eastern part of the bay-shaped plume in fall can be partly explained by the seasonal variation of mass transport associated with the Sverdrup balance. The fact that the western-bay (eastern-bay) plume appears when surface freshwater flux in the northeastern bay increases ( decreases) dramatically suggests that the plumes are not produced directly by surface freshwater flux. River discharge seems to be the freshwater source for the plumes and has little to do with the evolution of the plumes.

Endothelial microparticles released in thrombotic thrombocytopenic purpura express von Willebrand factor and markers of endothelial activation

It has been suggested that endothelial apoptosis is a primary lesion in the pathogenesis of thrombotic thrombocytopenic purpura (TTP). We tested this hypothesis by examining the phenotypic signatures of endothelial microparticles (EMP) in TTP patients. In addition, the effect of TTP plasma on microvascular endothelial cells (MVEC) in culture was further delineated. EMP released by endothelial cells (EC) express markers of the parent EC; EMP released in activation carry predominantly CD54 and CD62E, while those in apoptosis CD31 and CD105. We investigated EMP release in vitro and in TTP patients. Following incubation of MVEC with TTP plasma, EMP and EC were analysed by flow cytometry for the expression of CD31, CD51, CD54, CD62E, CD105, CD106 and von Willebrand factor (VWF) antigen. EMP were also analysed in 12 TTP patients. In both EC and EMP, CD62E and CD54 expression were increased 3- to 10-fold and 8- to 10-fold respectively. However, CD31 and CD105 were reduced 40-60% in EC but increased twofold in EMP. VWF expression was found in 55 +/- 15% of CD62E(+) EMP. Markers of apoptosis were negative. In TTP patients, CD62E(+) and CD31(+)/CD42b(-) EMP were markedly elevated, and preceded and correlated well with a rise in platelet counts and a fall in lactate dehydrogenase. CD62E(+) EMP (60 +/- 20%) co-expressed VWF and CD62E. The ratio of CD31(+)/42b(-) to CD62E(+) EMP exhibited a pattern consistent with activation. In conclusion, our studies indicate endothelial activation in TTP. EMP that co-express VWF and CD62E could play a role in the pathogenesis of TTP.