Using Spatiotemporal Methods to Fill Gaps In Energy Usage Interval Data

Researchers analyzing spatiotemporal or panel data, which varies both in location and over time, often find that their data has holes or gaps. This thesis explores alternative methods for filling those gaps and also suggests a set of techniques for evaluating those gap-filling methods to determine which works best.

Análise dos GAPS de percepção dos atores envolvidos no transporte urbano de carga em Porto Alegre

O transporte de carga é um importante setor da logística e da economia. Em áreas urbanas, a movimentação de bens por caminhões e a necessidade de estacionar os veículos nas vias para realizar as atividades de carga e descarga tendem a potencializar os problemas de tráfego para a cidade. Os problemas de tráfego incluem o agravamento dos níveis de congestionamento, deterioração da infra-estrutura viária e problemas ambientais. Este trabalho levanta e prioriza os problemas relacionados ao processo de distribuição de bens em parte da área central da cidade de Porto Alegre, conforme as visões dos diferentes atores envolvidos na atividade. O ponto de vista das empresas transportadoras de carga, dos estabelecimentos comerciais, da administração pública municipal através da Empresa Pública de Transporte e Circulação (EPTC) e dos consumidores e moradores da região são levantados através de uma pesquisa de mercado. Os dados obtidos são confrontados e analisados, evidenciando diferenças significativas de percepção quanto à importância e relevância dos itens avaliados. Além disso, a dissertação analisa as lacunas ou gaps de percepção entre a oferta, representada pelas empresas transportadoras, e a demanda, representada pelos estabelecimentos comerciais. Uma contribuição deste trabalho está relacionada com a análise das atividades de distribuição de bens que podem ser regulamentadas pela EPTC no centro da cidade de Porto Alegre. Algumas restrições de acesso e normas para a circulação e estacionamento dos veículos de carga são apontadas.

A Modular and digitally programmable interface based on band-pass sigma-delta modulator for mixed-signal systems-on-chip

The focus of this thesis is to discuss the development and modeling of an interface architecture to be employed for interfacing analog signals in mixed-signal SOC. We claim that the approach that is going to be presented is able to achieve wide frequency range, and covers a large range of applications with constant performance, allied to digital configuration compatibility. Our primary assumptions are to use a fixed analog block and to promote application configurability in the digital domain, which leads to a mixed-signal interface. The use of a fixed analog block avoids the performance loss common to configurable analog blocks. The usage of configurability on the digital domain makes possible the use of all existing tools for high level design, simulation and synthesis to implement the target application, with very good performance prediction. The proposed approach utilizes the concept of frequency translation (mixing) of the input signal followed by its conversion to the ΣΔ domain, which makes possible the use of a fairly constant analog block, and also, a uniform treatment of input signal from DC to high frequencies. The programmability is performed in the ΣΔ digital domain where performance can be closely achieved according to application specification. The interface performance theoretical and simulation model are developed for design space exploration and for physical design support. Two prototypes are built and characterized to validate the proposed model and to implement some application examples. The usage of this interface as a multi-band parametric ADC and as a two channels analog multiplier and adder are shown. The multi-channel analog interface architecture is also presented. The characterization measurements support the main advantages of the approach proposed.

Responsabilidade social corporativa e gaps de percepção: um estudo de caso

A disseminação do termo Responsabilidade Social Corporativa e de suas respectivas ações demonstra o grande potencial que as empresas possuem para atenuar ou agravar problemas sociais e ambientais. Hoje, existem diversas métricas que permitem medir a efetividade das ações de Responsabilidade Social praticadas pelas organizações e assim divulgar os feitos em RSC tanto em relatórios para investidores e quanto em outros meios. Esta pesquisa propõe analisar o desempenho em Responsabilidade Social de uma empresa do segmento de logística, pela percepção dos seus funcionários, confrontando-a com o discurso da empresa procurando identificar gaps de percepção. À luz de teorias da Escola de Frankfurt e de estudos em Responsabilidade Social, são analisadas possíveis causas para a existência de gaps entre a percepção dos funcionários e o discurso da empresa. Para delimitar o escopo da pesquisa, dada a amplitude do tema, foram utilizados os Indicadores Ethos de Responsabilidade Social Empresarial para identificar o desempenho em RSC da empresa analisada.

Uma proposta de FSS fractal com geometria simplificada

Frequency Selective Surfaces (FSS) are periodic structures in one or two dimensions that act as spatial filters, can be formed by elements of type conductors patches or apertures, functioning as filters band-stop or band-pass respectively. The interest in the study of FSS has grown through the years, because such structures meet specific requirements as low-cost, reduced dimensions and weighs, beyond the possibility to integrate with other microwave circuits. The most varied applications for such structures have been investigated, as for example, radomes, antennas systems for airplanes, electromagnetic filters for reflective antennas, absorbers structures, etc. Several methods have been used for the analysis of FSS, among them, the Wave Method (WCIP). Are various shapes of elements that can be used in FSS, as for example, fractal type, which presents a relative geometric complexity. This work has as main objective to propose a simplification geometric procedure a fractal FSS, from the analysis of influence of details (gaps) of geometry of the same in behavior of the resonance frequency. Complementarily is shown a simple method to adjust the frequency resonance through analysis of a FSS, which uses a square basic cell, in which are inserted two reentrance and dimensions these reentrance are varied, making it possible to adjust the frequency. For this, the structures are analyzed numerically, using WCIP, and later are characterized experimentally comparing the results obtained. For the two cases is evaluated, the influence of electric and magnetic fields, the latter through the electric current density vector. Is realized a bibliographic study about the theme and are presented suggestions for the continuation of this work

Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem

We have used ab initio calculations to investigate the electronic structure of SiGe based nanocrystals (NC s). This work is divided in three parts. In the first one, we focus the excitonic properties of Si(core)/Ge(shell) and Ge(core)/Si(shell) nanocrystals. We also estimate the changes induced by the effect of strain the electronic structure. We show that Ge/Si (Si/Ge) NC s exhibits type II confinement in the conduction (valence) band. The estimated potential barriers for electrons and holes are 0.16 eV (0.34 eV) and 0.64 eV (0.62 eV) for Si/Ge (Ge/Si) NC s. In contradiction to the expected long recombination lifetimes in type II systems, we found that the recombination lifetime of Ge/Si NC s (τR = 13.39μs) is more than one order of magnitude faster than in Si/Ge NC s (τR = 191.84μs). In the second part, we investigate alloyed Si1−xGex NC s in which Ge atoms are randomly positioned. We show that the optical gaps and electron-hole binding energies decrease linearly with x, while the exciton exchange energy increases with x due to the increase of the spatial extent of the electron and hole wave functions. This also increases the electron-hole wave functions overlap, leading to recombination lifetimes that are very sensitive to the Ge content. Finally, we investigate the radiative transitions in Pand B-doped Si nanocrystals. Our NC sizes range between 1.4 and 1.8 nm of diameters. Using a three-levels model, we show that the radiative lifetimes and oscillator strengths of the transitions between the conduction and the impurity bands, as well as the transitions between the impurity and the valence bands are strongly affected by the impurity position. On the other hand, the direct conduction-to-valence band decay is practically unchanged due to the presence of the impurity