998 resultados para Apple - Storage


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Tin oxide/nitride (SnOxNy) thin films were synthesised using a filtered cathodic vacuum arc deposition system. These films were deposited at room temperature with increasing amounts of reactive nitrogen gas to alter the nanostructure. To understand the surface structure of the coatings several techniques were used including scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD) and x-ray absorption spectroscopy (XAS). Preliminary results have shown that a cathodic arc can be used to deposit smooth films which exhibit a mixed tin oxide/nitride structure.

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Ultralong SnS2 nanobelts with a high production yield up to _98% were synthesized via a gram-scale and template-free solvothermal route. The synthetic mechanism of these intriguing ultralong nanobelts was proposed to be from the synergetic effect of the layered CdI2-type structure of SnS2 and surfacemodification of the capping reagent dodecanethiol. The resulting SnS2 nanobelts showed a high specific capacity of 640 mA h g_1 and stable cycling ability (560 mA h g_1 after 50 cycles), which is much better than a graphite anode.

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