Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N 2/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N 2/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N 2/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm. © 2012 Elsevier B.V. All rights reserved.

Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs

This paper reports an extensive analysis of the defect-related localized emission processes occurring in InGaN/GaN-based light-emitting diodes (LEDs) at low reverse- and forward-bias conditions. The analysis is based on combined electrical characterization and spectrally and spatially resolved electroluminescence (EL) measurements. Results of this analysis show that: (i) under reverse bias, LEDs can emit a weak luminescence signal, which is directly proportional to the injected reverse current. Reverse-bias emission is localized in submicrometer-size spots; the intensity of the signal is strongly correlated to the threading dislocation (TD) density, since TDs are preferential paths for leakage current conduction. (ii) Under low forward-bias conditions, the intensity of the EL signal is not uniform over the device area. Spectrally resolved EL analysis of green LEDs identifies the presence of localized spots emitting at 600 nm (i.e., in the yellow spectral region), whose origin is ascribed to localized tunneling occurring between the quantum wells and the barrier layers of the diodes, with subsequent defect-assisted radiative recombination. The role of defects in determining yellow luminescence is confirmed by the high activation energy of the thermal quenching of yellow emission (Ea =0.64&eV). © 2012 IEEE.

Study of second generation, high-temperature superconducting coils: Determination of critical current

This paper presents the modeling of second generation (2 G) high-temperature superconducting (HTS) pancake coils using finite element method. The axial symmetric model can be used to calculate current and magnetic field distribution inside the coil. The anisotropic characteristics of 2 G tapes are included in the model by direct interpolation. The model is validated by comparing to experimental results. We use the model to study critical currents of 2 G coils and find that 100μV/m is too high a criterion to determine long-term operating current of the coils, because the innermost turns of a coil will, due to the effect of local magnetic field, reach their critical current much earlier than outer turns. Our modeling shows that an average voltage criterion of 20μV/m over the coil corresponds to the point at which the innermost turns' electric field exceeds 100μV/m. So 20μV/m is suggested to be the critical current criterion of the HTS coil. The influence of background field on the coil critical current is also studied in the paper. © 2012 American Institute of Physics.

Tests for conceptual design of 6.6 kV class superconducting fault current limiter with YBCO thin film elements

A superconducting fault current limiter (SFCL) for 6.6 kV and 400 A installed in a cubicle for a distribution network substation was conceptually designed. The SFCL consists of parallel- and series-connected superconducting YBCO elements and a limiting resistor. Before designing the SFCL, some tests were carried out. The width and length of each element used in the tests are 30 mm and 210 mm, respectively. The element consists of YBCO thin film of about 200 nm in thickness on cerium dioxide (CeO2) as a cap-layer on a sapphire substrate by metal-organic deposition with a protective metal coat. In the tests, characteristics of each element, such as over-current, withstand-voltage, and so on, were obtained. From these characteristics, series and parallel connections of the elements, called units, were considered. The characteristics of the units were obtained by tests. From the test results, a single phase prototype SFCL was manufactured and tested. Thus, an SFCL rated at 6.6 kV and 400 A can be designed. © 2009 IEEE.

Superconducting fault current limiter design using parallel-connected YBCO thin films

Superconducting Fault Current Limiters (SFCLs) are able to reduce fault currents to an acceptable value, reducing potential mechanical and thermal damage to power system apparatus and allowing more flexibility in power system design and operation. The device can also help avoid replacing circuit breakers whose capacity has been exceeded. Due to limitations in current YBCO thin film manufacturing processes, it is not easy to obtain one large thin film that satisfies the specifications for high voltage and large current applications. The combination of standardized thin films has merit to reduce costs and maintain device quality, and it is necessary to connect these thin films in different series and parallel configurations in order to meet these specifications. In this paper, the design of a resistive type SFCL using parallel-connected YBCO thin films is discussed, including the role of a parallel resistor and the influence of individual thin film characteristics, based on both theory and experimental results. © 2009 IEEE.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.

Alternating current loss of second-generation high-temperature superconducting coils with magnetic and non-magnetic substrate

It is widely believed that the second-generation high-temperature superconducting (2G HTS) tapes with magnetic substrates suffer higher transport loss compared to those with non-magnetic substrates. To test this, we prepared two identical coils with magnetic and non-magnetic substrates, respectively. The experimental result was rather surprising that they generated roughly the same amount of transport loss. We used finite element method to understand this result. It is found that, unlike in the single tape where the magnetic field-dependent critical current characteristic can be neglected and the effect of magnetic substrate dominates, the magnetic field-dependent critical current characteristic of 2G tape plays as an equally important role as magnetic substrate in terms of HTS coils. © 2012 American Institute of Physics.

High-precision digital lock-in measurements of critical current and AC loss in HTS 2G-Tapes

Application of High Temperature Superconducting (HTS) has been increasingly popular since the new superconducting materials were discovered. This paper presents a new high-precision digital lock-in measurement technique which is used for measuring critical current and AC loss of the 2nd Generation HTS tape. Using a lock-in amplifier and nano-voltage meter, we can resolve signals at nano-volt level, while using a specially designed compensation coil we can cancel out inductive by adjusting the coil inductance. Furthermore, a finer correction for the inductive component can be achieved by adjusting the reference phase of the lock-in amplifier. The critical current and AC loss measurement algorithms and hardware layout are described and analyzed, and results for both numerical and experimental data under varieties of frequencies are presented. © 2008 SICE.

Experimental studies of the quench behaviour of MgB2 superconducting wires for fault current limiter applications

Various MgB2 wires with different sheath materials provided by Hyper Tech Research Inc., have been tested in the superconducting fault current limiter (SFCL) desktop tester at 24-26K in a self-field. Samples 1 and 2 are similarly fabricated monofilamentary MgB2 wires with a sheath of CuNi, except that sample 2 is doped with SiC and Mg addition. Sample 3 is a CuNi sheathed multifilamentary wire with Cu stabilization and Mg addition. All the samples with Nb barriers have the same diameter of 0.83mm and superconducting fractions ranging from 15% to 27% of the total cross section. They were heat-treated at temperatures of 700 °C for a hold time of 20-40min. Current limiting properties of MgB2 wires subjected to pulse overcurrents have been experimentally investigated in an AC environment in the self-field at 50Hz. The quench currents extracted from the pulse measurements were in a range of 200-328A for different samples, corresponding to an average engineering critical current density (Je) of around 4.8 × 10 4Acm-2 at 25K in the self-field, based on the 1νVcm-1 criterion. This work is intended to compare the quench behaviour in the Nb-barrier monofilamentary and multifilamentary MgB2 wires with CuNi and Cu/CuNi sheaths. The experimental results can be applied to the design of fault current limiter applications based on MgB2 wires. © IOP Publishing Ltd.

System studies of the superconducting fault current limiter in electrical distribution grids

A superconducting fault current limiter (SFCL) in series with a downstream circuit breaker could provide a viable solution to controlling fault current levels in electrical distribution networks. In order to integrate the SFCL into power grids, we need a way to conveniently predict the performance of the SFCL in a given scenario. In this paper, short circuit analysis based on the electromagnetic transient program was used to investigate the operational behavior of the SFCL installed in an electrical distribution grid. System studies show that the SFCL can not only limit the fault current to an acceptable value, but also mitigate the voltage sag. The transient recovery voltage (TRV) could be remarkably damped and improved by the presence of the SFCL after the circuit breaker is opened to clear the fault. © 2007 British Crown Copyright.

MgB2 sample tests for possible applications of superconducting fault current limiters

Cheap to make and easy to shape, Magnesium Diboride (MgB2) throws the field of applied superconductivity wide open. Great efforts have been made to develop a super-conducting fault current limiter (SFCL) using MgB 2. With a superconducting transition temperature of 39 K, MgB 2 can be conveniently cooled with commercial cryocoolers. A cryogenic desktop test system, an ac pulse generation system and a real time data acquisition program in LabView/DAQmx were developed to investigate the quench behavior of MgB2 wires under pulse overcurrents at 25 K in self-field conditions. The experimental results on the current limitation behavior show the possibilities for using MgB2 for future SFCL applications. © 2007 IEEE.

Investigations of current limiting properties of the MgB2 wires subjected to pulse overcurrents in the benchtop tester

A laboratory scale desktop test system including a cryogenic system, an AC pulse generation system and a real time data acquisition program in LabView/DAQmx, has been developed to evaluate the quench properties of MgB 2 wires as an element in a superconducting fault current limiter under pulse overcurrents at 25K in self-field conditions. The MgB2 samples started from a superconducting state and demonstrated good current limiting properties characterized by a fast transition to the normal state during the first half of the cycle and a continuously limiting effect in the subsequent cycles without burnouts. The experimental and numerical simulation results on the quench behaviour indicate the feasibility of using MgB 2 for future superconducting fault current limiter (SFCL) applications. © IOP Publishing Ltd.