Unbinding forces of single antibody-antigen complexes correlate with their thermal dissociation rates

Point mutants of three unrelated antifluorescein antibodies were constructed to obtain nine different single-chain Fv fragments, whose on-rates, off-rates, and equilibrium binding affinities were determined in solution. Additionally, activation energies for unbinding were estimated from the temperature dependence of the off-rate in solution. Loading rate-dependent unbinding forces were determined for single molecules by atomic force microscopy, which extrapolated at zero force to a value close to the off-rate measured in solution, without any indication for multiple transition states. The measured unbinding forces of all nine mutants correlated well with the off-rate in solution, but not with the temperature dependence of the reaction, indicating that the same transition state must be crossed in spontaneous and forced unbinding and that the unbinding path under load cannot be too different from the one at zero force. The distance of the transition state from the ground state along the unbinding pathway is directly proportional to the barrier height, regardless of the details of the binding site, which most likely reflects the elasticity of the protein in the unbinding process. Atomic force microscopy thus can be a valuable tool for the characterization of solution properties of protein-ligand systems at the single molecule level, predicting relative off-rates, potentially of great value for combinatorial chemistry and biology.

Deuterium isotope effect on the intramolecular electron transfer in Pseudomonas aeruginosa azurin

Intramolecular electron transfer in azurin in water and deuterium oxide has been studied over a broad temperature range. The kinetic deuterium isotope effect, kH/kD, is smaller than unity (0.7 at 298 K), primarily caused by the different activation entropies in water (−56.5 J K−1 mol−1) and in deuterium oxide (−35.7 J K−1 mol−1). This difference suggests a role for distinct protein solvation in the two media, which is supported by the results of voltammetric measurements: the reduction potential (E0′) of Cu2+/+ at 298 K is 10 mV more positive in D2O than in H2O. The temperature dependence of E0′ is also different, yielding entropy changes of −57 J K−1 mol−1 in water and −84 J K−1 mol−1 in deuterium oxide. The driving force difference of 10 mV is in keeping with the kinetic isotope effect, but the contribution to ΔS‡ from the temperature dependence of E0′ is positive rather than negative. Isotope effects are, however, also inherent in the nuclear reorganization Gibbs free energy and in the tunneling factor for the electron transfer process. A slightly larger thermal protein expansion in H2O than in D2O (0.001 nm K−1) is sufficient both to account for the activation entropy difference and to compensate for the different temperature dependencies of E0′. Thus, differences in driving force and thermal expansion appear as the most straightforward rationale for the observed isotope effect.

Two recombination-dependent DNA replication pathways of bacteriophage T4, and their roles in mutagenesis and horizontal gene transfer

Two major pathways of recombination-dependent DNA replication, “join-copy” and “join-cut-copy,” can be distinguished in phage T4: join-copy requires only early and middle genes, but two late proteins, endonuclease VII and terminase, are uniquely important in the join-cut-copy pathway. In wild-type T4, timing of these pathways is integrated with the developmental program and related to transcription and packaging of DNA. In primase mutants, which are defective in origin-dependent lagging-strand DNA synthesis, the late pathway can bypass the lack of primers for lagging-strand DNA synthesis. The exquisitely regulated synthesis of endo VII, and of two proteins from its gene, explains the delay of recombination-dependent DNA replication in primase (as well as topoisomerase) mutants, and the temperature-dependence of the delay. Other proteins (e.g., the single-stranded DNA binding protein and the products of genes 46 and 47) are important in all recombination pathways, but they interact differently with other proteins in different pathways. These homologous recombination pathways contribute to evolution because they facilitate acquisition of any foreign DNA with limited sequence homology during horizontal gene transfer, without requiring transposition or site-specific recombination functions. Partial heteroduplex repair can generate what appears to be multiple mutations from a single recombinational intermediate. The resulting sequence divergence generates barriers to formation of viable recombinants. The multiple sequence changes can also lead to erroneous estimates in phylogenetic analyses.

Electrical investigation of p-type 4H-SiC heavily doped by ion implantation

In the last decades, an increasing interest in the research field of wide bandgap semiconductors was observed, mostly due to the progressive approaching of silicon-based devices to their theoretical limits. 4H-SiC is an example among these, and is a mature compound for applications. The main advantages offered 4H-SiC in comparison with silicon are an higher breakdown field, an higher thermal conductivity, a higher operating temperature, very high hardness and melting point, biocompatibility, but also low switching losses in high frequencies applications and lower on-resistances in unipolar devices. Then, 4H-SiC power devices offer great performance improvement; moreover, they can work in hostile environments where silicon power devices cannot function. Ion implantation technology is a key process in the fabrication of almost all kinds of SiC devices, owing to the advantage of a spatially selective doping. This work is dedicated to the electrical investigation of several differently-processed 4H-SiC ion- implanted samples, mainly through Hall effect and space charge spectroscopy experiments. It was also developed the automatic control (Labview) of several experiments. In the work, the effectiveness of high temperature post-implant thermal treatments (up to 2000°C) were studied and compared considering: (i) different methods, (ii) different temperatures and (iii) different duration of the annealing process. Preliminary p + /n and Schottky junctions were also investigated as simple test devices. 1) Heavy doping by ion implantation of single off-axis 4H-SiC layers The electrical investigation is one of the most important characterization of ion-implanted samples, which must be submitted to mandatory post-implant thermal treatment in order to both (i) recover the lattice after ion bombardment, and (ii) address the implanted impurities into lattice sites so that they can effectively act as dopants. Electrical investigation can give fundamental information on the efficiency of the electrical impurity activation. To understand the results of the research it should be noted that: (a) To realize good ohmic contacts it is necessary to obtain spatially defined highly doped regions, which must have conductivity as low as possible. (b) It has been shown that the electrical activation efficiency and the electrical conductivity increase with the annealing temperature increasing. (c) To maximize the layer conductivity, temperatures around 1700°C are generally used and implantation density high till to 10 21 cm -3 . In this work, an original approach, different from (c), is explored by the using very high annealing temperature, around 2000°C, on samples of Al + -implant concentration of the order of 10 20 cm -3 . Several Al + -implanted 4H-SiC samples, resulting of p-type conductivity, were investigated, with a nominal density varying in the range of about 1-5∙10 20 cm -3 and subjected to two different high temperature thermal treatments. One annealing method uses a radiofrequency heated furnace till to 1950°C (Conventional Annealing, CA), the other exploits a microwave field, providing a fast heating rate up to 2000°C (Micro-Wave Annealing, MWA). In this contest, mainly ion implanted p-type samples were investigated, both off-axis and on-axis <0001> semi-insulating 4H-SiC. Concerning p-type off-axis samples, a high electrical activation of implanted Al (50-70%) and a compensation ratio below 10% were estimated. In the work, the main sample processing parameters have been varied, as the implant temperature, CA annealing duration, and heating/cooling rates, and the best values assessed. MWA method leads to higher hole density and lower mobility than CA in equivalent ion implanted layers, resulting in lower resistivity, probably related to the 50°C higher annealing temperature. An optimal duration of the CA treatment was estimated in about 12-13 minutes. A RT resistivity on the lowest reported in literature for this kind of samples, has been obtained. 2) Low resistivity data: variable range hopping Notwithstanding the heavy p-type doping levels, the carrier density remained less than the critical one required for a semiconductor to metal transition. However, the high carrier densities obtained was enough to trigger a low temperature impurity band (IB) conduction. In the heaviest doped samples, such a conduction mechanism persists till to RT, without significantly prejudice the mobility values. This feature can have an interesting technological fall, because it guarantee a nearly temperature- independent carrier density, it being not affected by freeze-out effects. The usual transport mechanism occurring in the IB conduction is the nearest neighbor hopping: such a regime is effectively consistent with the resistivity temperature behavior of the lowest doped samples. In the heavier doped samples, however, a trend of the resistivity data compatible with a variable range hopping (VRH) conduction has been pointed out, here highlighted for the first time in p-type 4H-SiC. Even more: in the heaviest doped samples, and in particular, in those annealed by MWA, the temperature dependence of the resistivity data is consistent with a reduced dimensionality (2D) of the VRH conduction. In these samples, TEM investigation pointed out faulted dislocation loops in the basal plane, whose average spacing along the c-axis is comparable with the optimal length of the hops in the VRH transport. This result suggested the assignment of such a peculiar behavior to a kind of spatial confinement into a plane of the carrier hops. 3) Test device the p + -n junction In the last part of the work, the electrical properties of 4H-SiC diodes were also studied. In this case, a heavy Al + ion implantation was realized on n-type epilayers, according to the technological process applied for final devices. Good rectification properties was shown from these preliminary devices in their current-voltage characteristics. Admittance spectroscopy and deep level transient spectroscopy measurements showed the presence of electrically active defects other than the dopants ones, induced in the active region of the diodes by ion implantation. A critical comparison with the literature of these defects was performed. Preliminary to such an investigation, it was assessed the experimental set up for the admittance spectroscopy and current-voltage investigation and the automatic control of these measurements.

Condensados de Bose-Einstein em redes óticas: a transição superfluido-isolante de Mott em redes hexagonais e a classe de universalidade superfluido-vidro de Bose em 3D

Estudamos transições de fases quânticas em gases bosônicos ultrafrios aprisionados em redes óticas. A física desses sistemas é capturada por um modelo do tipo Bose-Hubbard que, no caso de um sistema sem desordem, em que os átomos têm interação de curto alcance e o tunelamento é apenas entre sítios primeiros vizinhos, prevê a transição de fases quântica superfluido-isolante de Mott (SF-MI) quando a profundidade do potencial da rede ótica é variado. Num primeiro estudo, verificamos como o diagrama de fases dessa transição muda quando passamos de uma rede quadrada para uma hexagonal. Num segundo, investigamos como a desordem modifica essa transição. No estudo com rede hexagonal, apresentamos o diagrama de fases da transição SF-MI e uma estimativa para o ponto crítico do primeiro lobo de Mott. Esses resultados foram obtidos usando o algoritmo de Monte Carlo quântico denominado Worm. Comparamos nossos resultados com os obtidos a partir de uma aproximação de campo médio e com os de um sistema com uma rede ótica quadrada. Ao introduzir desordem no sistema, uma nova fase emerge no diagrama de fases do estado fundamental intermediando a fase superfluida e a isolante de Mott. Essa nova fase é conhecida como vidro de Bose (BG) e a transição de fases quântica SF-BG que ocorre nesse sistema gerou muitas controvérsias desde seus primeiros estudos iniciados no fim dos anos 80. Apesar dos avanços em direção ao entendimento completo desta transição, a caracterização básica das suas propriedades críticas ainda é debatida. O que motivou nosso estudo, foi a publicação de resultados experimentais e numéricos em sistemas tridimensionais [Yu et al. Nature 489, 379 (2012), Yu et al. PRB 86, 134421 (2012)] que violam a lei de escala $\\phi= u z$, em que $\\phi$ é o expoente da temperatura crítica, $z$ é o expoente crítico dinâmico e $ u$ é o expoente do comprimento de correlação. Abordamos essa controvérsia numericamente fazendo uma análise de escalonamento finito usando o algoritmo Worm nas suas versões quântica e clássica. Nossos resultados demonstram que trabalhos anteriores sobre a dependência da temperatura de transição superfluido-líquido normal com o potencial químico (ou campo magnético, em sistemas de spin), $T_c \\propto (\\mu-\\mu_c)^\\phi$, estavam equivocados na interpretação de um comportamento transiente na aproximação da região crítica genuína. Quando os parâmetros do modelo são modificados de maneira a ampliar a região crítica quântica, simulações com ambos os modelos clássico e quântico revelam que a lei de escala $\\phi= u z$ [com $\\phi=2.7(2)$, $z=3$ e $ u = 0.88(5)$] é válida. Também estimamos o expoente crítico do parâmetro de ordem, encontrando $\\beta=1.5(2)$.

Cristalização assistida por destilação por membranas aplicada ao reuso de água: comparação com outros métodos de reuso, análise do processo e projeto hierárquico de processo.

No presente trabalho foram avaliados processos alternativos de dessalinização visando a recuperação e reuso da água contida em salmouras concentradas, sendo o processo de cristalização assistida por destilação por membranas (MDC) investigado com profundidade. Foi desenvolvido um modelo diferencial para o processo de destilação por membranas por contato direto (DCMD), contemplando métodos termodinâmicos rigorosos para sistemas aquosos de eletrólitos fortes, bem como mecanismos de transferência de calor e massa e efeitos de polarização de temperatura e concentração característicos deste processo de separação. Com base em simulações realizadas a partir do modelo matemático assim desenvolvido, foram investigados os principais parâmetros que influenciam o projeto de um módulo de membranas para DCMD. O modelo foi posteriormente estendido com equações de balanço de massa e energia adicionais para incluir a operação de cristalização e desta forma representar o processo de MDC. De posse dos resultados das simulações e do modelo estendido, foi desenvolvido um método hierárquico para o projeto de processos de MDC, com o objetivo de conferir características de rastreabilidade e repetibilidade a esta atividade. Ainda a partir do modelo MDC foram discutidos aspectos importantes em MDC como a possibilidade de nucleação e crescimento de cristais sobre a superfície das membranas, bem como o comportamento do processo com sais com diferentes características de solubilidade e largura da zona metaestável. Verificou-se que para sais cuja solubilidade varia muito pouco com a temperatura e que possuem zona metaestável com pequena largura, caso do NaCl, a operação com resfriamento no cristalizador não é viável pois aumenta excessivamente o consumo energético do processo, sendo nesses casos preferível a operação \"isotérmica\" - sem resfriamento no cristalizador - e o convívio com a possibilidade de nucleação no interior do módulo. No extremo oposto, observou-se que para sais com grande variabilidade da solubilidade com a temperatura, um pequeno resfriamento no cristalizador é suficiente para garantir condições de subsaturação no interior do módulo, sem grande ônus energético para o processo. No caso de sais com pequena variabilidade da solubilidade com a temperatura, mas com largura da zona metaestável elevada, existe certo ônus energético para a operação com resfriamento do cristalizador, porém não tão acentuado como no caso de sais com zona metaestável estreita. Foi proposto um fluxograma alternativo para o processo de MDC, onde foi introduzido um circuito de pré-concentração da alimentação antes do circuito de cristalização, para o caso de alimentação com soluções muito diluídas. Este esquema proporcionou um aumento do fluxo permeado global do processo e consequentemente uma redução na área total de membrana requerida. Verificou-se que através do processo com préconcentração da alimentação de 5% até 10% em massa - no caso de dessalinização de uma solução de NaCl - foi possível reduzir-se a área total da membrana em 27,1% e o consumo energético específico do processo em 10,6%, quando comparado ao processo sem pré-concentração. Foram desenvolvidas ferramentas úteis para o projeto de processos de dessalinização por MDC em escala industrial.

Induced Ti magnetization at La_(0.7)Sr_(0.3)MnO_(3) and BaTiO_(3) interfaces

In artificial multiferroics hybrids consisting of ferromagnetic La_(0.7)Sr_(0.3)MnO_(3) (LSMO) and ferroelectric BaTiO_(3) epitaxial layers, net Ti moments are found from polarized resonant soft x-ray reflectivity and absorption. The Ti dichroic reflectivity follows the Mn signal during the magnetization reversal, indicating exchange coupling between the Ti and Mn ions. However, the Ti dichroic reflectivity shows stronger temperature dependence than the Mn dichroic signal. Besides a reduced ferromagnetic exchange coupling in the interfacial LSMO layer, this may also be attributed to a weak Ti-Mn exchange coupling that is insufficient to overcome the thermal energy at elevated temperatures.

Caracterização elétrica de túnel-FET em estrutura de nanofio com fontes de SiGe e Ge em função da temperatura.

Este trabalho teve como objetivo estudar os transistores de tunelamento por efeito de campo em estruturas de nanofio (NW-TFET), sendo realizado através de analises com base em explicações teóricas, simulações numéricas e medidas experimentais. A fim de avaliar melhorar o desempenho do NW-TFET, este trabalho utilizou dispositivos com diferentes materiais de fonte, sendo eles: Si, liga SiGe e Ge, além da variação da espessura de HfO2 no material do dielétrico de porta. Com o auxílio de simulações numéricas foram obtidos os diagramas de bandas de energia dos dispositivos NW-TFET com fonte de Si0,73Ge0,27 e foi analisada a influência de cada um dos mecanismos de transporte de portadores para diversas condições de polarização, sendo observado a predominância da influência da recombinação e geração Shockley-Read-Hall (SRH) na corrente de desligamento, do tunelamento induzido por armadilhas (TAT) para baixos valores de tensões de porta (0,5V > VGS > 1,5V) e do tunelamento direto de banda para banda (BTBT) para maiores valores tensões de porta (VGS > 1,5V). A predominância de cada um desses mecanismos de transporte foi posteriormente comprovada com a utilização do método de Arrhenius, sendo este método adotado em todas as análises do trabalho. O comportamento relativamente constante da corrente dos NW-TFETs com a temperatura na região de BTBT tem chamado a atenção e por isso foi realizado o estudo dos parâmetros analógicos em função da temperatura. Este estudo foi realizado comparando a influência dos diferentes materiais de fonte. O uso de Ge na fonte, permitiu a melhora na corrente de tunelamento, devido à sua menor banda proibida, aumentando a corrente de funcionamento (ION) e a transcondutância do dispositivo. Porém, devido à forte dependência de BTBT com o campo elétrico, o uso de Ge na fonte resulta em uma maior degradação da condutância de saída. Entretanto, a redução da espessura de HfO2 no dielétrico de porta resultou no melhor acoplamento eletrostático, também aumentando a corrente de tunelamento, fazendo com que o dispositivo com fonte Ge e menor HfO2 apresentasse melhores resultados analógicos quando comparado ao puramente de Si. O uso de diferentes materiais durante o processo de fabricação induz ao aumento de defeitos nas interfaces do dispositivo. Ao longo deste trabalho foi realizado o estudo da influência da densidade de armadilhas de interface na corrente do dispositivo, demonstrando uma relação direta com o TAT e a formação de uma região de platô nas curvas de IDS x VGS, além de uma forte dependência com a temperatura, aumentando a degradação da corrente para temperaturas mais altas. Além disso, o uso de Ge introduziu maior número de impurezas no óxido, e através do estudo de ruído foi observado que o aumento na densidade de armadilhas no óxido resultou no aumento do ruído flicker em baixa frequência, que para o TFET, ocorre devido ao armadilhamento e desarmadilhamento de elétrons na região do óxido. E mais uma vez, o melhor acoplamento eletrostático devido a redução da espessura de HfO2, resultou na redução desse ruído tornando-se melhor quando comparado à um TFET puramente de Si. Neste trabalho foi proposto um modelo de ruído em baixa frequência para o NW-TFET baseado no modelo para MOSFET. Foram realizadas apenas algumas modificações, e assim, obtendo uma boa concordância com os resultados experimentais na região onde o BTBT é o mecanismo de condução predominante.

Fermi-edge singularities in linear and nonlinear ultrafast spectroscopy

We discuss Fermi-edge singularity effects on the linear and nonlinear transient response of an electron gas in a doped semiconductor. We use a bosonization scheme to describe the low-energy excitations, which allows us to compute the time and temperature dependence of the response functions. Coherent control of the energy absorption at resonance is analyzed in the linear regime. It is shown that a phase shift appears in the coherent control oscillations, which is not present in the excitonic case. The nonlinear response is calculated analytically and used to predict that four wave-mixing experiments would present a Fermi-edge singularity when the exciting energy is varied. A new dephasing mechanism is predicted in doped samples that depends linearly on temperature and is produced by the low-energy bosonic excitations in the conduction band.

Geochemistry and sedimentation rates of ODP Leg 199 sites and of surface sediments in the eastern Pacific ocean

We present the first high-resolution organic carbon mass accumulation rate (MAR) data set for the Eocene equatorial Pacific upwelling region, from Sites 1218 and 1219 of the Ocean Drilling Program. A maximum Corg MAR anomaly appears at 41 Ma and corresponds to a high carbonate accumulation event (CAE). Independent evidence suggests that this event (CAE-3) was a time of rapid cooling. Throughout the Eocene, organic carbon burial fluxes were an order of magnitude lower than fluxes recorded for the Holocene. In contrast, the expected organic carbon flux, calculated from the biogenic barium concentrations for these sites, is roughly equal to modern. A sedimentation anomaly appears at 41 Ma, when both the measured and the expected organic carbon MAR increases by a factor of two-three relative to the background Eocene fluxes. The rain of estimated Corg and barium from the euphotic zone to the sediments increased by factors of three and six, respectively. We suggest that the discrepancy between the expected and measured Corg in the sediments is a direct consequence of the increased metabolic rates of all organisms throughout the Eocene oceans and sediments. This hypothesis is supported by recent work in ecology and biochemical kinetics that recognizes the fundamental basis of ecology as following from the laws of thermodynamics. This dependence is now elucidated as the Universal Temperature Dependence (UTD) "law" of metabolism and can be applied to all organisms over their biologically relevant temperature range. The general pattern of organic carbon and barium deposition throughout the Eocene is consistent with the UTD theory. In particular, the anomaly at 41 Ma (CAE-3) is associated with rapid cooling, an event that triggered slower metabolic rates for all organisms, slower recycling of organic carbon in the water and sediment column, and, consequently, higher deposition of organic carbon in the sediments. This "metabolism-based" scenario is consistent with the sedimentation patterns we observe for both Sites 1218 and 1219.

Magnetic state of ocean basalts (Table 1)

The natural remanent magnetization (NRM) of ocean basalts, giving rise to the pattern of marine magnetic anomalies, is known to be of comparatively low intensity for about 20 Ma old oceanic crust. The aim of this study is to detect possible peculiarities in the rock magnetic properties of ocean basalts of this age, and to establish a link between magnetomineralogy, rock magnetic parameters, and the low NRM intensity. Ocean basalts covering ages from 0.7 to 135 Ma were selected for rock magnetic experiments and their room temperature hysteresis parameters, Curie temperature and temperature dependence of saturation magnetization MS(T) was determined and complemented by reflected light microscopy. The majority of samples is magnetically dominated by titanomagnetite and titanomaghemite with increasing oxidation state with age. For these, a strong dependence of hysteresis parameters on the age of the samples is found. The samples have a minimum in saturation magnetization and a maximum in magnetic stability in the age interval ranging from approximately 10 to 40 Ma, coinciding with the age interval of low NRM intensity. The observed change in saturation magnetization is in the same order as that for the NRM intensity. A further peculiarity of the titanomaghemites from this age interval is the shape of their MS(T) curves, which display a maximum above room temperature (Neel P-type) and, sometimes, a self-reversal of magnetization below room temperature (Neel N-type). These special rock magnetic properties can be explained by titanomagnetite low-temperature oxidation and highly oxidized titanomaghemites in the age interval 10-40 Ma. A corresponding measurement of the NRM at elevated temperature allows to identify a maximum in NRM intensity above room temperature for the samples in that age interval. This provides evidence that the NRM is equally carried by titanomaghemites and that the low NRM intensities for about 20 Ma old ocean basalts are caused consequently by the low saturation magnetization of these titanomaghemites.

Indications of coherence-incoherence crossover in layered metallic transport

For many strongly correlated metals with layered crystal structure the temperature dependence of the interlayer resistance is different to that of the intralayer resistance. We consider a small polaron model which exhibits this behavior, illustrating how the interlayer transport is related to the coherence of quasiparticles within the layers. Explicit results are also given for the electron spectral function, interlayer optical conductivity, and the interlayer magnetoresistance. All these quantities have two contributions: one coherent (dominant at low temperatures) and the other incoherent (dominant at high temperatures).

Layered silicate nanocomposites based on various high-functionality epoxy resins: The influence of an organoclay on resin cure

The influence of an organically modified clay on the curing behavior of three epoxy systems widely used in the aerospace industry and of different structures and functionalities, was studied. Diglycidyl ether of bisphenol A (DGEBA), triglycidyl p-amino phenol (TGAP) and tetraglycidyl diamino diphenylmethane (TGDDM) were mixed with an octadecyl ammonium ion modified organoclay and cured with diethyltoluene diamine (DETDA). The techniques of dynamic mechanical thermal analysis (DMTA), chemorheology and differential scanning calorimetry (DSC) were applied to investigate gelation and vitrification behavior, as well as catalytic effects of the clay on resin cure. While the formation of layered silicate nanocomposite based on the bifunctional DGEBA resin has been previously investigated to some extent, this paper represents the first detailed study of the cure behavior of different high performance, epoxy nanocomposite systems.

Yield behaviour of a melt-compounded polyethylene-intercalated montmorillonite nanocomposite

The yield behaviour of a series of melt-mixed polyethylene-modified montmorillonite nanocomposites has been studied as a function of temperature and strain rate and compared to the behaviour of the base polymer. The processing conditions used gave an intercalated structure as assessed by X-ray diffraction. Although there was a modest improvement in stiffness with clay content, the yield behaviour was insensitive to the addition of the clay. Both the base polymer and the nanocomposites showed double yield points. These were analysed as activated rate processes, with the activation energies consistent with the low strain yield point being associated with the alpha(2) molecular relaxation and the higher strain yield point with W axis slip. (C) 2003 Society of Chemical Industry.