Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate

By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid soul-cc molecular beam epitaxy. Four [011] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photo luminescence. (c) 2005 Elsevier B.V. All rights reserved.

Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure

The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed. (c) 2005 Elsevier B.V. All rights reserved.

A passively mode-locked diode-end-pumped Nd : YAG laser with a semiconductor saturable absorber mirror grown by metal organic chemical vapour deposition

We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror (SESAM) from which we achieved a 10 ps pulse duration at 150 MHz repetition rate. The SESAM was grown by metal organic chemical vapour deposition at low temperature. The recovery time was measured to be 0.5 ps, indicating the potential pulse compression to sub-picoseconds.

Measurement of gain spectrum for semiconductor lasers utilizing integrations of product of emission spectrum and a phase function over one mode interval

A technique based on the integrations of the product of amplified spontaneous emission spectrum and a phase function over one mode interval is proposed for measuring gain spectrum for Fabry-Perot semiconductor lasers, and a gain correction factor related to the response function of the optical spectrum analyzer (OSA) is obtained for improving the accuracy of measured gain spectrum. The gain spectra with a difference less than 1.3 cm(-1) from 1500 to 1600 nm are obtained for a 250-mum-long semiconductor laser at the OSA resolution of 0.06, 0.1, 0.2, and 0.5 nm. The corresponding gain correction factor is about 9 cm(-1) at the resolution of 0.5 nm. The gain spectrum measured at the resolution of 0.5 nm has the same accuracy as that obtained by the Hakki-Paoli method at the resolution of 0.06 nm for the laser with the mode interval of 1.3 nm.

Passive mode locking of a diode-end-pumped Nd : GdVO4 laser with a semiconductor saturable absorber mirror

We report an end-pumped and passive mode-locking all-solid-state laser. The laser consists of a Nd:GdVO4 crystal and a linear resonator with a semiconductor saturable absorber mirror that yield mode locking. We achieved stable continuous-wave mode locking with an 8-ps pulse duration at a 154-MHz repetition rate. The average output power was 600 mW with 4 W of pump power. To our knowledge this is the first report of the use of a Nd:GdVO4 crystal for mode locking with a semiconductor saturable absorber mirror. (C) 2003 Optical Society of America.

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

The morphological evolution of GaN thin films grown on sapphire by metalorganic chemical vapor deposition was demonstrated to depend strongly on the growth pressure of GaN nucleation layer (NL). For the commonly used two-step growth process, a change in deposition pressure of NL greatly influences the growth mode and morphological evolution of the following GaN epitaxy. By means of atomic force microscopy and scanning electron microscope, it is shown that the initial density and the spacing of nucleation sites on the NL and subsequently the growth mode of FIT GaN epilayer may be directly controlled by tailoring the initial low temperature NL growth pressure. A mode is proposed to explain the TD reduction for NL grown at relatively high reactor pressure. (C) 2003 Elsevier B.V. All rights reserved.

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

The influence of reactor pressure on GaN nucleation layer (NL) and the quality of subsequent GaN on sapphire is studied. The layers were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire substrates and investigated by in situ laser reflectometry, atomic force microscope, scanning electron microscope, X-ray diffraction and photoluminescence. With the increase of reactor pressure prior to high-temperature GaN growth, the size of GaN nuclei formed after annealing decreases, the spacing between nucleation sites increases and the coalescence of GaN nuclei is deferred. The optical and crystalline qualities of GaN epilayer were improved when NLs were deposited at high pressure. The elongated lateral overgrowth of GaN islands is responsible for the quality improvement. (C) 2003 Elsevier Science B.V. All rights reserved.

Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity

A microcavity structure, containing self-assembled InGaAs quantum dots, is studied by angle-resolved photoluminescence (PL) spectroscopy. A doublet with the splitting energy of 0.5-1.5 nm appears when the detection angle is larger than 35degrees. This doublet is identified as mode splitting (not the Rabi splitting) by polarization measurements. We find that it is the considerable deviation of the cavity-mode frequency from the central frequency of the stop band that makes the TE and TM cavity modes split more discernibly. The inhomogeneous broadening of quantum dots gives the TE and TM cavity modes a chance to show up simultaneously in the PL spectra. (C) 2003 American Institute of Physics.

Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity

The reflectivity spectra at different incident angles of semiconductor microcavity having heavy-hole exciton and light-hole exciton are calculated ly transfer matrix method using the linear dispersion model. Meanwhile we calculate the energy of three cavity polaritons at different incident angles formed by the coupling between cavity mode and the two exciton modes using the three harmonic oscillators coupling model, and the weights of cavity mode and the two exciton modes in the three cavity polaritons. The results indicate that there is obvious anticross between the high energy cavity polariton and the two low energy cavity polaritons with increasing incident angles, and the weights of three modes(cavity mode, heavy-hole exciton mode and light-hole exciton mode) in the three cavity polaritons increase or decrease.

Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

The structural characteristic of cubic GaN (C-GaN) nucleation layers on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by X-ray diffraction (XRD) measurements, using a Huber five-circle diffractometer and an intense synchrotron X-ray source. The XRD results indicate that the C-GaN nucleation layers are highly crystallized. Phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the GaN nucleation layers show exactly cubic symmetrical structure. The GaN(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. Possible explanations are suggested. The pole figures of {1 0 (1) over bar 0} reflections from H-GaN inclusions show that the parasitic H-GaN originates from the C-GaN nucleation layers. The coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (C) 2002 Elsevier Science B.V. All rights reserved.

Analysis of mode quality factors for equilateral triangle semiconductor microlasers with rough sidewalls

The eigenmode characteristics for equilateral triangle resonator (ETR) semiconductor microlasers are analysed by the finite-difference time-domain technique and the Pade approximation. The random Gaussian correlation function and sinusoidal function are used to model the side roughness of the ETR. The numerical results show that the roughness can cause the split of the degenerative modes, but the confined modes can still have a high quality factor. For the ETR with a 3 mum side length and the sinusoidal fluctuation, we can have a quality factor of 800 for the fundamental mode in the wavelength of 1500 nm, as the amplitude of roughness is 75 mn.

Simple method for estimating minimum bend radii of SOI single mode curved rib waveguides

A simple method based on the effective index method was used to estimate the minimum bend radii of curved SOI waveguides. An analytical formula was obtained to estimate the minimum radius of curvature at which the mode becomes cut off due to the side radiative loss.

Influence of output waveguide on mode quality factor in semiconductor microlasers with an equilateral triangle resonator

Semiconductor microlasers with an equilateral triangle resonator (ETR) and an output waveguide are proposed and analyzed by the finite-difference time-domain technique and the Pade approximation. The numerical results show that microlasers with an output waveguide still have a high-quality factor (Q factor) and are suitable to realize directional emission. For the ETR with a 0.46-mum-width opening in one of the vertices connected to the output waveguide, we have the Q factor of 1.5x10(3) and 2.5x10(2) for the TM fundamental mode at the wavelength of 1.55 mum, as the side length of the ETR is 5 and 3 mum. The simulated intensity distributions are presented for the fundamental mode in the ETR with a side length of 3 mum and an opening of 0.23 mum. (C) 2000 American Institute of Physics. [S0003-6951(00)01749-6].

Raman-forbidden mode and oxygen ordering in Bi2Sr2-xLaxCuO6+gamma single crystals annealed in oxygen

A Raman-forbidden phonon mode at about 840 cm(-1) is observed popularly on the surface of pun and La-doped Bi2Sr2-xLaxCuO6+y (0 less than or equal to x less than or equal to 0.8) single crystals annealed in oxygen. A remarkable excitation dependence of this additional line is found. Based on the properties of the structure of the Bi-O layer with excess oxygen atoms and the similarity in the appearance of the Raman-forbidden modes between RBa2Cu3Ox (R = Y, Nd, Gd, Pr) and Bi2Sr2-xLaxCuO6+y systems, we attribute the manifestation of this additional line to the ordering of the interstitial oxygen in the Bi-O layers. Our results provide Raman evidences for confirming that the ordering of the movable oxygen may exist universally in high-temperature superconductors.

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

Growth mode and strain relaxation of molecular-beam-epitaxy grown InAs/InAlAs/InP (111)A system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. In direct contrast to the well-studied InAs/GaAs system, our experimental results show that the InAs grown on InAlAs/InP (111)A follows the Stranski-Krastanov mode. Both self-organized InAs quantum dots and relaxed InAs islands are formed depending on the InAs coverage. Intense luminescence signals from both the InAs quantum dots and wetting layer are observed. The luminescence efficiency of (111)A samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on InP (111)A surfaces. (C) 1999 American Institute of Physics. [S0003-6951(99)01010-4].