Formation mechanisms of uniform arrays of periodic nanoparticles and nanoripples on 6H-SiC crystal surface induced by femtosecond laser ablation

Uniform arrays of periodic nanoparticles with 80-nm period are formed on 6H-SiC crystal irradiated by circularly polarized 400-nm femtosecond laser pulses. In order to understand the formation mechanism, the morphology evolvement as a function of laser pulse energy and number is studied. Periodic nanoripples are also formed on the sample surface irradiated by linearly polarized 400-, 510- and 800-nm femtosecond laser pulses. All these results support well the mechanism that second-harmonic generation plays an important role in the formation of periodic nanostructures.

Coherent enhancement of broadband frequency up-conversion in BBO crystal by shaping femtosecond laser pulses

An optimal feedback control of broadband frequency up-conversion in BBO crystal is experimentally demonstrated by shaping femto-second laser pulses based on genetic algorithm, and the frequency up-conversion efficiency can be enhanced by similar to 16%. SPIDER results show that the optimal laser pulses have shorter pulse-width with the little negative chirp than the original pulse with the little positive chirp. By modulating the fundamental spectral phase with periodic square distribution on SLM-256, the frequency up-conversion can be effectively controlled by the factor of about 17%. The experimental results indicate that the broadband frequency up-conversion efficiency is related to both of second harmonic generation (SHG) and sum frequency generation (SFG), where the former depends on the fundamental pulse intensity, and the latter depends on not only the fundamental pulse intensity but also the fundamental pulse spectral phase. (c) 2006 Elsevier B.V. All rights reserved.

Upconversion luminescence and optical power limiting effect based on two- and three-photon absorption processes of ZnO crystal

Near-infrared to UV and visible upconversion luminescence was observed in single-crystalline ZnO under an 800 nm infrared femtosecond laser irradiation. The optical properties of the crystal reveal that the UV and VIS emission band are due to the exciton transition (D0X) bound to neutral donors and the deep luminescent centers in ZnO, respectively. The relationship between the upconversion luminescence intensity and the pump power of the femtosecond laser reveals that the UV emission belongs to three-photon sequential band-to-band excitation and the VIS emission belongs to two-photon simultaneous defect-absorption induced luminescence. A saturation phenomenon and polarization-dependent effect are also observed in the upconversion process of ZnO. A very good optical power limiting performance at 800 nm has been demonstrated. The two- and three-photon absorption coefficients of ZnO crystal were measured to be 0.2018 cm GW(-1) and 7.102 x 10(-3) cm(3) GW(-2), respectively. The two- and three-photon cross sections were calculated to be 1.189 x 10(-51) cm(4) s and 1.040 x 10(-80) cm(6) s(2), respectively. (c) 2007 Elsevier B.V. All rights reserved.

Microstructures induced in the bulk of SrTiO3 crystal by a femtosecond laser

Microstructures with the total length of hundreds of mu m were induced by fixing the focal point of the femtosecond laser at a certain depth in the bulk of SrTiO3 crystal. By different combination of the focusing conditions with the laser parameters, different morphologies have been observed, such as void array, necklace-shaped structures, continuous/segmental filaments and etc. The possible mechanism of the formation of those diversiform structures is discussed.

Aplicação da técnica de difração de raios X usando luz síncroton para caracterização de esmalte dentário humano flluorótico e de controle

Com a introdução do flúor como o principal agente anticariogênico e, talvez, um aumento do flúor na nossa cadeia alimentar, a fluorose dentária tornou-se um problema mundial. Os mecanismos que conduzem à formação do esmalte fluorótico são desconhecidos, mas devem envolver modificações nas reações físico-químicas básicas de desmineralização e remineralização do esmalte dentário. O aumento daquantidade de flúor no cristal apatita resulta no aumento dos parâmetros de rede. O objetivo deste trabalho é caracterizar o esmalte dentário humano saudável e fluorótico usando difração de raios X com luz síncrotron. Todos os perfis de espalhamento foram medidos na linha de difração de raios X (XRD1) do Laboratório Nacional de Luz Síncrotron, Campinas SP. Os experimentos foram realizados usando amostras em pó e em lâminas polidas. As amostras em pó foram analisadas a fim de obter a caracterização do esmalte dentário saudável. As lâminas foram analisadas em áreas do esmalte específicas identificadas como fluoróticas. Todos os perfis foram comparados com amostras de esmalte de controle e também com a literatura. A evidente similaridade entre os perfis de difração mostraram a analogia entre as estruturas do esmalte dentário e a hidroxiapatita padrão. Fica evidente que os perfis de difração do esmalte dentário das amostras em lâmina são diferentes daqueles obtidos para o esmalte em pó. As diferenças encontradas incluem variação na cristalinidade e orientação preferencial. Os valores encontrados para as distâncias interplanares para o esmalte de controle e fluorótico das amostras em lâmina não apresentaram diferenças estatisticamente significativas. Isto pode ser explicado pelo fato que a hidroxiapatita e a fluoropatita formam cristais com a mesma estrutura hexagonal, mesmo grupo de simetria e têm parâmetros de rede muito próximos, os quais a habilidade do sistema não foi suficiente para resolver. Finalmente, este trabalho mostra que a difração de raios X usando radiação síncrotron é uma técnica poderosa para o estudo da cristalografia e microestrutura do esmalte dentário e, ainda, pode ser igualmente aplicada no estudo de outros tecidos biológicos duros e de biomateriais sintéticos.

New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

Silicide formation and the interaction of metals with polycrystalline Si

The main factors affecting solid-phase Si-metal interactions are reported in this work. The influence of the orientation of the Si substrates and the presence of impurities in metal films and at the Si-metal interface on the formation of nickel and chromium silicides have been demonstrated. We have observed that the formation and kinetic rate of growth of nickel silicides is strongly dependent on the orientation and crystallinity of the Si substrates; a fact which, up to date, has never been seriously investigated in silicide formation. Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of CrSi₂. The potentiality and use of silicides as a diffusion barrier in metallization on silicon devices were also investigated.

Two phases, Ni₂Si and NiSi, form simultaneously in two distinct sublayers in the reaction of Ni with amorphous Si, while only the former phase was observed on other substrates. On (111) oriented Si substrates the growth rate is about 2 to 3 times less than that on <100> or polycrystalline Si. Transmission electron micrographs establish-·that silicide layers grown on different substrates have different microcrystalline structures. The concept of grain-boundary diffusion is speculated to be an important factor in silicide formation.

The composition and kinetic rate of CrSi₂ formation are not influenced by the underlying Si substrate. While the orientation of the Si substrate does not affect the formation of CrSi₂ , the purity of the Cr film and the state of Si-Cr interface become the predominant factors in the reaction process. With an interposed layer of Pd₂Si between the Cr film and the Si substrate, CrSi₂ starts to form at a much lower temperature (400°C) relative to the Si-Cr system. However, the growth rate of CrSi₂ is observed to be independent of the thickness of the Pd2Si layer. For both Si-Cr and Si-Pd₂Si-Cr samples, the growth rate is linear with time with an activation energy of 1.7 ± 0.1 ev.

A tracer technique using radioactive ³¹Si (T_1/2 = 2.26 h) was used to study the formation of CrSi₂ on Pd₂Si. It is established from this experiment that the growth of CrSi₂ takes place partly by transport of Si directly from the Si substrate and partly by breaking Pd₂Si bonds, making free Si atoms available for the growth process.

The role of CrSi₂ in Pd-Al metallization on Si was studied. It is established that a thin CrSi₂ layer can be used as a diffusion barrier to prevent Al from interacting with Pd₂Si in the Pd-Al metallization on Si.

As a generalization of what has been observed for polycrystalline-Si-Al interaction, the reactions between polycrystalline Si (poly Si) and other metals were studied. The metals investigated include Ni, Cr, Pd, Ag and Au. For Ni, Cr and Pd, annealing results in silicide formation, at temperatures similar to those observed on single crystal Si substrates. For Al, Ag and Au, which form simple eutectics with Si annealing results in erosion of the poly Si layer and growth of Si crystallites in the metal films.

Backscattering spectrometry with 2.0 and 2.3 MeV ⁴He ions was the main analytical tool used in all our investigations. Other experimental techniques include the Read camera glancing angle x-ray diffraction, scanning electron, optical and transmission electron microscopy. Details of these analytical techniques are given in Chapter II.