Mäntän naisyhdistyksen kymmenvuotisessa juhlassa 5. III. 16

11 x 19 cm

Tutustukaa Helsinkiin kiertokäyntipäivillä 1-8.III. 1936

kuv., 14 x 21 cm

Tutustukaa Helsinkiin kiertokäyntipäivillä 1-8.III. 1936

kuv., 14 x 21 cm

Suomalaiset naisten päivät 19 16/III 27

12 x 23 cm

Tal vid III:dje Nordiska Kvinnosakskongressens högtidliga öppnande 3. V. 1924 av Ilmi Hallsten

15 x 20 cm

Basel III-vakavaraisuusuudistuksen taloudelliset vaikutukset talletuspankissa

Basel-säännökset ovat kansainvälisesti yhtenäistetyt vakavaraisuussäännökset, jotka Kansainvälisen järjestelypankin yhteydessä toimiva Baselin komitea on luonut. Tällä hetkellä voimassa ovat Basel II-säännökset, mutta Baselin komitea on valmistellut finanssikriisin osoittamien puutteiden vuoksi uudet Basel III-säännökset, jotka rakentuvat Basel II-säännösten pohjalta. Vuonna 2008 alkanut finanssikriisi on osoittanut pankkien vakavaraisuuden sääntelyn tärkeyden, koska finanssikriisi paljasti suuria puutteita pankkien vakavaraisuus- ja maksuvalmiussääntelyssä. Basel III-säännösten myötä pankeilta tullaan vaatimaan nykyistä enemmän ja korkealaatuisempia omia varoja. Basel IIIsäännösten keskeisiä tavoitteita ovat pankkien kriisinsietokyvyn parantaminen ja järjestelmäriskien pienentäminen. Siirtymäaika tiukempiin vakavaraisuussäännöksiin on tarkoitus alkaa vuodesta 2013 vaiheittain ja täysimääräisesti Basel III-säännökset olisivat voimassa vuoden 2019 alusta. Tutkimuksen tarkoitus on analysoida millaisia muutoksia Basel III-säännökset aiheuttavat pankin vakavaraisuuteen, omien varojen laskentaan sekä toimintaan. Tutkimus on kvalitatiivinen casetutkimus, joka toteutettiin Suomessa toimivassa talletuspankissa. Tutkimus pohjautuu aiheeseen liittyvään kirjallisuuteen sekä pankkitoimintaan liittyviin teorioihin. Näiden lisäksi tutkimuksessa on hyödynnetty casepankissa tehtyjä haastatteluja sekä casepankin sisäisiä ohjeistuksia ja raportteja liittyen pankin vakavaraisuuteen ja sen laskentaan. Basel III-vakavaraisuusuudistuksella tulee olemaan merkittäviä vaikutuksia tutkimuksen kohteena olevan pankin vakavaraisuuteen ja pääomarakenteeseen. Basel III-säännökset tiukentavat omien varojen laatuvaatimuksia, kasvattavat riskipainotettuja saamisia ja korottavat vähimmäisvakavaraisuuden tasoa. Lisäksi pankkeja tulee koskemaan jatkossa kaksi täysin uutta vakavaraisuusvaatimusta: maksuvalmiusvaatimus ja pysyvän varainhankinnan vaatimus. Tällä hetkellä vallitseva matala korkotaso laskee pankkien tulostasoa, joten tästä aiheutuu vielä omat lisähaasteensa pankkien kannattavuudelle ja vakavaraisuuden hallinnalle.

Detection and phylogenetic analysis of porcine enteric calicivirus, genetically related to the Cowden strain of sapovirus genogroup III, in Brazilian swine herds

Sapovirus of the Caliciviridae family is an important agent of acute gastroenteritis in children and piglets. The Sapovirus genus is divided into seven genogroups (G), and strains from the GIII, GVI and GVII are associated with infections in swine. Despite the high prevalence in some countries, there are no studies related to the presence of porcine enteric sapovirus infections in piglets in Brazil. In the present study, 18 fecal specimens from piglets up to 28 days were examined to determine the presence of sapovirus genome by RT-PCR assay, using primers designed to amplify a 331 bp segment of the RNA polymerase gene. In 44.4% (8/18) of fecal samples, an amplified DNA fragment was obtained. One of these fragments was sequenced and submitted to molecular and phylogenetic analysis. This analysis revealed high similarity, with nucleotides (87%) and amino acids (97.8%), to the Cowden strain, the GIII prototype of porcine enteric calicivirus. This is the first description of sapovirus in Brazilian swine herds.

Sinfonia III op. 31

Soitinnus: orkesteri.

Distribution of collagen types I, III, and IV in gastric tissue of marmosets (Callithrix spp., Callitrichidae: Primates)

Extracellular matrix (ECM) components such as fibrillar collagens play a fundamental role in wound repair and have also been studied in association with the gastric ulcer healing process in gastroenterology. Nevertheless, there have been no studies in the literature to date regarding the description and characterization of ECM components, neither in normal nor in injured gastric tissue of primate species. The objective of this study was to investigate the expression of gastric collagen types I, III, and IV in marmosets (Callithrix sp.). Histological specimens from the stomach of 6 Callithrix jacchus, 12 C. kuhli, and 12 C. geoffroyi were evaluated. The specimens were immunostained with anti-types I and III collagen polyclonal antibodies and anti-type IV collagen monoclonal antibody. Collagen types I and III were detected in the submucosa and lamina propria between the mucosal glands while collagen type IV was detected in the muscularis mucosae, muscular layers, blood vessels, and gastric mucosa between the mucosal glands. It is hoped that these findings can contribute to future studies on the gastric extracellular matrix components in primates and to comparative studies in the area of gastroenterology.

Unusual bismuth-containing surface layers of III-V compound semiconductors

The understanding and engineering of bismuth (Bi) containing semiconductor surfaces are signi cant in the development of novel semiconductor materials for electronic and optoelectronic devices such as high-e ciency solar cells, lasers and light emitting diodes. For example, a Bi surface layer can be used as a surfactant which oats on a III-V compound-semiconductor surface during the epitaxial growth of IIIV lms. This Bi surfactant layer improves the lm-growth conditions if compared to the growth without the Bi layer. Therefore, detailed knowledge of the properties of the Bi/III-V surfaces is needed. In this thesis, well-de ned surface layers containing Bi have been produced on various III-V semiconductor substrates. The properties of these Bi-induced surfaces have been measured by low-energy electron di raction (LEED), scanning-tunneling microscopy and spectroscopy (STM), and synchrotron-radiation photoelectron spectroscopy. The experimental results have been compared with theoretically calculated results to resolve the atomic structures of the studied surfaces. The main ndings of this research concern the determination of the properties of an unusual Bi-containing (2×1) surface structure, the discovery and characterization of a uniform pattern of Bi nanolines, and the optimization of the preparation conditions for this Bi-nanoline pattern.

Research and development of III-V semiconductor surfaces for improved device interfaces

This thesis is devoted to understanding and improving technologically important III-V compound semiconductor (e.g. GaAs, InAs, and InSb) surfaces and interfaces for devices. The surfaces and interfaces of crystalline III-V materials have a crucial role in the operation of field-effect-transistors (FET) and highefficiency solar-cells, for instance. However, the surfaces are also the most defective part of the semiconductor material and it is essential to decrease the amount of harmful surface or interface defects for the next-generation III-V semiconductor device applications. Any improvement in the crystal ordering at the semiconductor surface reduces the amount of defects and increases the material homogeneity. This is becoming more and more important when the semiconductor device structures decrease to atomic-scale dimensions. Toward that target, the effects of different adsorbates (i.e., Sn, In, and O) on the III-V surface structures and properties have been investigated in this work. Furthermore, novel thin-films have been synthesized, which show beneficial properties regarding the passivation of the reactive III-V surfaces. The work comprises ultra-high-vacuum (UHV) environment for the controlled fabrication of atomically ordered III-V(100) surfaces. The surface sensitive experimental methods [low energy electron diffraction (LEED), scanning tunneling microscopy/spectroscopy (STM/STS), and synchrotron radiation photoelectron spectroscopy (SRPES)] and computational density-functionaltheory (DFT) calculations are utilized for elucidating the atomic and electronic properties of the crucial III-V surfaces. The basic research results are also transferred to actual device tests by fabricating metal-oxide-semiconductor capacitors and utilizing the interface sensitive measurement techniques [capacitance voltage (CV) profiling, and photoluminescence (PL) spectroscopy] for the characterization. This part of the thesis includes the instrumentation of home-made UHV-compatible atomic-layer-deposition (ALD) reactor for growing good quality insulator layers. The results of this thesis elucidate the atomic structures of technologically promising Sn- and In-stabilized III-V compound semiconductor surfaces. It is shown that the Sn adsorbate induces an atomic structure with (1×2)/(1×4) surface symmetry which is characterized by Sn-group III dimers. Furthermore, the stability of peculiar ζa structure is demonstrated for the GaAs(100)-In surface. The beneficial effects of these surface structures regarding the crucial III-V oxide interface are demonstrated. Namely, it is found that it is possible to passivate the III-V surface by a careful atomic-scale engineering of the III-V surface prior to the gate-dielectric deposition. The thin (1×2)/(1×4)-Sn layer is found to catalyze the removal of harmful amorphous III-V oxides. Also, novel crystalline III-V-oxide structures are synthesized and it is shown that these structures improve the device characteristics. The finding of crystalline oxide structures is exploited by solving the atomic structure of InSb(100)(1×2) and elucidating the electronic structure of oxidized InSb(100) for the first time.