Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Static Study of Cantilever Beam stiction under Electrostatic Force Influence

The model and analysis of the cantilever beam adhesion problem under the action of electrostatic force are given. Owing to the nonlinearity of electrostatic force, the analytical solution for this kind of problem is not available. In this paper, a systematic method of generating polynomials which are the exact beamsolutions of the loads with different distributions is provided. The polynomials are used to approximate the beam displacement due to electrostatic force. The equilibrium equation offers an answer to how the beam deforms but no information about the unstuck length. The derivative of the functional with respect to the unstuck length offers such information. But to compute the functional it is necessary to know the beam deformation. So the problem is iteratively solved until the results are converged. Galerkin and Newton-Raphson methods are used to solve this nonlinear problem. The effects of dielectric layer thickness and electrostatic voltage on the cantilever beamstiction are studied.The method provided in this paper exhibits good convergence. For the adhesion problem of cantilever beam without electrostatic voltage, the analytical solution is available and is also exactly matched by the computational results given by the method presented in this paper.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

The preparation, characterization and tribological properties of TA-C : H deposited using an electron cyclotron wave resonance plasma beam source

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 Å/min over a 4″ diameter and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its sp3 content, mass density, intrinsic stress, hydrogen content, C-H bonding, Raman spectra, optical gap, surface roughness and friction coefficient. The results obtained indicated that the film properties were maximized at an ion energy of approximately 167 eV, corresponding to an energy per daughter carbon ion of 76 eV. The relationship between the incident ion energy and film densification was also explained in terms of the subsurface implantation of carbon ions into the growing film.

Electron Beam Surface Treatment. Part II: Microstructure Evolution of Stainless Steel and Aluminum Alloy During Electron Beam Rapid Solidification

Surface rapid solidification microstructures of AISI 321 austenitic stainless steel and 2024 aluminum alloy have been investigated by electron beam remelting process and optical microscopy observation. It is indicated that the morphologies of the melted layer of both stainless steel and aluminum alloy change dramatically compared to the original materials. Also, the microstructures were greatly refined after the electron beam irradiation.

Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system

The development of the Nanolith parallel electron-beam writing head was discussed. The fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in the lithographic system were described. The microcathode exhibited a peak current of 10.5 μA at 48 V when operated with a duty cycle of 0.5 percent.

Efficient line launch for bandwidth improvement of 10 Gbit/s multimode fibre links using elliptical Gaussian beam

A novel elliptical Gaussian beam line launch is shown to allow improved system capacity for high speed multimode fibre links. This launch maintains higher bandwidth than dual launch even with misalignment of ±6 μm despite not requiring testing at installation. ©2010 IEEE.

Probing biomolecular interaction forces using an anharmonic acoustic technique for selective detection of bacterial spores.

Receptor-based detection of pathogens often suffers from non-specific interactions, and as most detection techniques cannot distinguish between affinities of interactions, false positive responses remain a plaguing reality. Here, we report an anharmonic acoustic based method of detection that addresses the inherent weakness of current ligand dependant assays. Spores of Bacillus subtilis (Bacillus anthracis simulant) were immobilized on a thickness-shear mode AT-cut quartz crystal functionalized with anti-spore antibody and the sensor was driven by a pure sinusoidal oscillation at increasing amplitude. Biomolecular interaction forces between the coupled spores and the accelerating surface caused a nonlinear modulation of the acoustic response of the crystal. In particular, the deviation in the third harmonic of the transduced electrical response versus oscillation amplitude of the sensor (signal) was found to be significant. Signals from the specifically-bound spores were clearly distinguishable in shape from those of the physisorbed streptavidin-coated polystyrene microbeads. The analytical model presented here enables estimation of the biomolecular interaction forces from the measured response. Thus, probing biomolecular interaction forces using the described technique can quantitatively detect pathogens and distinguish specific from non-specific interactions, with potential applicability to rapid point-of-care detection. This also serves as a potential tool for rapid force-spectroscopy, affinity-based biomolecular screening and mapping of molecular interaction networks.

Thermal fracture characteristics induced by laser beam

The damage mechanism of a cracked material due to laser beam thermal shock is an important problem when the interactions of high power laser beam with materials are studied. The transient thermal stress intensity factors (TSIFs) for a center crack in an infinite plate subjected to laser beam thermal shock are investigated. When the crack is in the heat affected zone, the compressive thermal stress causes the crack surface to come into contact with each other over a certain contact length, but the high tensile stresses around the crack tip tend to open the crack. In this case, the problem may be treated as a pair of embedded cracks problem with a smooth closure condition of the center crack. The TSIFs and the crack contact lengths are calculated with different laser beam spatial shapes. The TSIFs induced by thermal shock are in marked different from those induced by general mechanical loading.

Gamma-Ray Attenuation Technique For Measuring Void Fraction In Horizontal Gas-Liquid Two-Phase Flow

The measurement of void fraction is of importance to the oil industry and chemical industry. In this article, the principle and mathematical method of determining the void fraction of horizontal gas-liquid flow by using a single-energy gamma-ray system is described. The gamma-ray source is the radioactive isotope of Am-241 with gamma-ray energy of 59.5 keV. The time-averaged value of the void fraction in a 50.0-mm i.d. transparent horizontal pipeline is measured under various combinations of the liquid flow and gas flow. It is found that increasing the gas flow rate at a fixed liquid flow rate would increase the void fraction. Test data are compared with the predictions of the correlations and a good agreement is found. The result shows that the designed gamma-ray system can be used for measuring the void fraction in a horizontal gas-liquid two-phase flow with high accuracy.

(Ti,Al)N Film On Normalized T8 Carbon Tool Steel Prepared By Pulsed High Energy Density Plasma Technique

Under optimized operating parameters, a hard and wear resistant ( Ti,Al)N film is prepared on a normalized T8 carbon tool steel substrate by using pulsed high energy density plasma technique. Microstructure and composition of the film are analysed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and scanning electron microscopy. Hardness profile and tribological properties of the film are tested with nano-indenter and ring-on-ring wear tester, respectively. The tested results show that the microstructure of the film is dense and uniform and is mainly composed of ( Ti,Al)N and AlN hard phases. A wide transition interface exists between the film and the normalized T8 carbon tool steel substrate. Thickness of the film is about 1000 nm and mean hardness value of the film is about 26GPa. Under dry sliding wear test conditions, relative wear resistance of the ( Ti,Al)N film is approximately 9 times higher than that of the hardened T8 carbon tool steel reference sample. Meanwhile, the ( Ti,Al)N film has low and stable friction coefficient compared with the hardened T8 carbon tool steel reference sample.

Modified Generalized Beam Lattice Model Associated With Fracture Of Reinforced Fiber/Particle Composites

Lattice-type model can simulate in a straightforward manner heterogeneous brittle media. Mohr-Coulomb failure criterion has recently been involved into the generalized beam (GB) lattice model, and as a result, numerical experiments on concrete under various loading conditions can be conducted. The GB lattice model is further used to investigate the reinforced fiber/particle composites instead of only particle composites as the model did before. Numerical examples are given to show the effectiveness of the modeling procedure, and influences of inclusions (particle, fiber and rebar) on the fracture processes are also discussed. (c) 2008 Elsevier Ltd. All rights reserved.

Thickness And Component Distributions Of Yttrium-Titanium Alloy Films In Electron-Beam Physical Vapor Deposition

Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.